
Text extracted from the exhibit documents filed with the FCC. Open a document above to read the original.
Place case with light facing up on Qi-certified charger or use the Type-C connector to charge Deepods Qi Type-c Qi Type-C Deepods Setzen Sie die Kopfhörerbox-Anzeige nach oben auf das Qi-zertifizierte kabellose Lade- gerät oder verwenden Sie das Type-c-Kabel zum Aufladen Positionner l'indicateur de casque vers le Haut sur un chargeur sans fil certifié Qi ou charger à l'aide d'un c âble de type C Coloque el estuche con la luz hacia arriba en el cargador con certificación Qi o use el conector type-C para cargar los Deepods Posiziona la custodia con la luce rivolta verso l'alto sul caricabatterie certificato Qi o utilizza il connettore di tipo C per caricare i Deepods Take out Deepods 4 Deepods 4 Deepods4 Nehmen Sie Deepods 4 heraus Sortez Deepods 4 Saca los Deepods 4 Elimina Deepods 4 Turn on Bluetooth and connect Deepods 4 Deepods 4 BluetoothDeepods4 Schalten Sie Bluetooth ein und verbinden Sie Deepods 4 Activez le Bluetooth et connectez Deepods 4 Encienda bluetooth y conecte Deepods 4 Attiva il bluetooth e connetti Deepods 4 Press to play or pause 1 Klicken Sie zum Abspielen oder Anhalten Cliquez pour jouer ou mettre en pause Haga clic para reproducir o pausar Fare clic per riprodurre o mettere in pausa Double-press right bud to skip forward Doppelklicken Sie auf den rechten Ohrstö- psel, um zum nächsten Song zu springen Double - cliquez sur le bouchon d'oreille droit pour passer à la prochaine chanson Haga doble clic en el auricular derecho para saltar a la siguiente canción Fare doppio clic sul tappo destro per passare alla canzone successiva Double-press left bud to skip back Doppelklicken Sie auf den linken Ohrstecker, um zum vorherigen Song zurückzuspringen Double - cliquez sur l'oreille gauche pour revenir à la chanson précédente Haga doble clic en el auricular izquierdo para saltar de nuevo a la canción anterior Fare doppio clic sul tappo auricolare sinistro per tornare alla canzone precedente Long press for 2S to activate voice assistant 2S Drücken Sie lange auf 2S, um den Sprachassistenten zu aktivieren Appuyez longuement pendant 2S pour activer l'assistant vocal Mantenga presionado durante 2 segundo para activar el asistente de voz Premere a lungo per 2 secondo per attivare l'assistente vocale FCC Warning This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions (1) this device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. Changes or modifications not expressly approved by the party responsible for compliance could void the user’s authority to operate the equipment. Note 1: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures: —Reorient or relocate the receiving antenna. —Increase the separation between the equipment and receiver. —Connect the equipment into an outlet on a circuit different from that to which the receiver is connected. —Consult the dealer or an experienced radio/TV technician for help. Note : Changes or modifications to this unit not expressly approved by the party responsible for compliance could void the user’s authority to operate the equipment. Radiation Exposure Statement The device has been evaluated to meet general RF exposure requirement. The device can be used in portable exposure condition without restriction.
Bluetooth headset FCC ID: 2A9JY-DEEPPODS4 Deeppods 4 External Photographs
FCC ID: 2A9JY-DEEPPODS4 Deeppods 4 Label and Label location FCC ID: 2A9JY-EEPPODS4
Bluetooth headset FCC ID: 2A9JY-DEEPPODS4 Deeppods 4 Internal Photographs
RF Exposure Requirements 1.1 Product Description for Equipment Under Test (EUT) Client Information Applicant: Address of applicant: Manufacturer: Address of manufacturer: shenzhen hyeing technology co.ltd Room 1515, Block A, Weidonglong Business Building, No. 2125 Meilong Avenue, Longhua New District, Shenzhen shenzhen hyeing technology co.ltd Room 1515, Block A, Weidonglong Business Building, No. 2125 Meilong Avenue, Longhua New District, Shenzhen General Description of EUT Product Name: Bluetooth headset Brand Name: / Model No.: Deeppods 4 Adding Model(s): / Rated Voltage: DC 3,7V from Battery Power Adapter: / Software Version: / Hardware Version: / Serial Number: Bluetooth headset FCC ID: 2A9JY-DEEPPODS4 Technical Characteristics of EUT Bluetooth Version: V5.0 BLE Frequency Range: 2402-2480MHz RF Output Power: -3.21dBm Data Rate: 1Mbps Modulation: GFSK Quantity of Channels: 40 Channel Separation: 2MHz Type of Antenna: Integral Antenna Gain: 2.48 dBi 1.2 Standard Applicable According to §1.1307(b)(1) and KDB 447498 D01 General RF Exposure Guidance v06, the following RF exposure evaluation shall to demonstrate RF exposure compliance. [(max. power of channel, including tune-up tolerance, mW) / (min. test separation distance, mm)] · [√f(GHz)] ≤ 3.0 Where -f(GHz) is the RF channel transmit frequency in GHz -Power and distance are rounded to the nearest mW and mm before calculation -The test exclusions are applicable only when the minimum test separation distance is ≤ 50 mm, and for transmission frequencies between 100 MHz and 6 GHz. When the minimum test separation distance is < 5 mm, a distance of 5 mm according to 4.1 f) is applied to determine SAR test exclusion. 1.3 Calculation Method Bluetooth Tx frequency range: 2402~2480MHz Min. test separation distance: 5mm Maximum Conducted Output Power: -3.21dBm Maximum Tune-up Conducted Output Power: -3dBm RF channel transmit frequency: 2402MHz Result: 0.1554 Limit: 3.0 So the transmitter complies with the RF exposure requirements and the SAR is not required.
SMDCERAMICANTENNA DataSheet CA -2450-2 1 For 2400-2483MH z 2.0x1.2mm [EIA2012] 典型特征 T y p i cal Characterist i cs ■ 重量轻,结构紧凑 Light weight, compact ■ 宽带大,低成本 Wide bandwidth, low cost ■ 高增益内置天线 Built-in antenna with high gain ■ 工作温度 Operating Temp. : -40°C~+85°C 电气特性 Electrical Characteristics per line(TA=25°C) 2400~2483 MHz Lin ear 2. 48 dB i 72. 6% % 50 频带 Frequency Band 极 化 P o l a riz a t i o n * 峰 值 增 益 P eak Ga in * 峰 值 效 率 P ea k Effi c i e n c y 阻 抗 Im p e n da n ce 参数Parameter 规格Specification 单位Units 特征 Feature 应用 Application ■ 蓝牙,无线局域网,移动电视 Bluetooth, Wireless LAN, Mobile TV ■ 家用射频系统Home RF system, etc TECHNOLOGY *测 试 条 件 : 测 试 板 尺 寸 9 8 × 65 mm ; 匹 配 电 路 : π 型 匹 配 电 路 。 T est co n d i t i o n : T est boa r d s iz e 9 8 * 65 m m ; M a t c hin g c ir cu i t: P i m a t c hin g c ir cu i t w il l be re q u ir ed Fi g .1 驻 波 比 V S WR W CA-2450-21 Chip Antenna 3D 模式 3D Gain Pattern (2400 MHz) 2D 模式 2D Gain Pattern (2400 MHz) 增益模式是在 暗 室 进 行 测 试 的 , 被 测 件 放 在 桌 肩 位 置 , 用 标 准 的 喇 叭 天 线 和 矢 量 网 络 分 析 仪 来 收 集 数 据 。 Th e Ga i n p a tt e rn i s measu r ed i n FAR - fi e l d c h a m be r . D U T i s p l aced o n e tab l e o f r o t a t o r , a s t a n da r d ho r n a n t e nn a a n d Vec t o r N e t w o rk t o co ll ect da t a . 辐射模式 Radiation Pattern Fig.2 暗室示意图 FAR-field Chamber TECHNOLOGY Chip Antenna t h An a l y z e r i s uesd 3D 模式 3D Gain Pattern (2450 MHz) 2D 模式 2D Gain Pattern (2450 MHz) 3D 模式 3D Gain Pattern (2500 MHz) 2D 模式 2D Gain Pattern (2500 MHz) TECHNOLOGY Chip Antenna 1. 30±3 minutes at -40°C±5°C, 2. Convert to +105°C (5 minutes) 3. 30±3 minutes at +105°C±5°C, 4. Convert to -40°C (5 minutes) 5. Total 100 continuous cycles 项目Item 环境Condition 规格Specification 热冲击 Thermal shock No apparent damage Fulfill the electrical spec. after test. 抗湿性 Humidity resistance No apparent damage Fulfill the electrical spec. after test. 1. Humidity: 85% R.H. 2. Temperature: 85±5°C 3. Time: 1000 hours. The dipped surface of the terminal shall be at least 95% covered with solder after dipped in solder bath of 245±5°C for 3±1 seconds. No apparent damage 焊锡性 Solderability 耐焊接热性 Soldering heat resistance No apparent damage 1. Solder bath temperature : 260±5°C 2. Bathing time: 10±1 seconds 低温电阻 Low temperature resistance No apparent damage Fulfill the electrical spec. after test. 1. Temperature: -40°C±5°C 2. Time: 1000 hours. No apparent damage Fulfill the electrical spec. after test. 1. Temperature: 150°C±5°C 2. Time: 1000 hours. 耐高温性 High temperature resistance 推荐回流焊接曲线Recommended Reflow Solder curve (2) 储存环境 Storage Condition (a)仓库:温度应在0~30°C之间,湿度应小于60%湿度,产品应在交货之日起1年内使用。 At warehouse: The temperature should be within 0 ~ 30°C and humidity should be less than 60% RH.The product should be used within 1 year from the time of elivery. (b)在板:温度应在40~85°C之间,湿度应小于85%湿度。On board: The temperature should be within -40~85°C and humidity should be less than 85% RH. (3) 工作环境温度 Operating Temperature Range 工作温度范围:-40°C to +85°C。 Operating temperature range : -40°C to +85°C. TECHNOLOGY Chip Antenna 推荐焊&Evaluation Board (1) 电烙铁的使用 Soldering Gun Procedure 以下注意事项仅针对使用电烙铁进行个别器件更换。 Note the follows, in case of using solder gun for replacement. (a) 使用小于30W的电烙铁,温度不高于350°C,焊接时间小于3秒。 The tip temperature must be less than 350°C for the period within 3 seconds by using soldering gun under 30 W. (b) 烙铁不可直接接触器件本体。 The soldering gun tip shall not touch this product directly. (2) 焊锡量 Soldering Volume 注意焊接过程中过多的焊锡量会损害器件本体。 Note that excess of soldering volume will easily get crack the body of this product. 产品尺寸 Product Dimension TECHNOLOGY Chip Antenna 1 应用环境Application Guide 包装信息Package Information A B C D E F L W 8.00±0.3 3.50± 0.051.75±0.1 2.00±0.054.00±0.1 1.50±0.1 2.30± 0.1 1.55± 0.1 编码规则 Par t Number System CA-2450-21 External DimensionsL*W(mm)2.0*1.2 Central Frequency2450MHz Product Series: Chip Antenna 丝印 Marking TF TECHNOLOGY Chip Antenna TECHNOLOGY 订货信息Order Information 设备 Device Package 净重 Net Weight 运送 式 Carrier 量 Quantity 认证 HSF Status CA-2450-21 2012 Tape & Reel 5000pcs RoHS compliant 版本信息 Revision history 日期/Date 本 /Revision 2015-9-15 1.0 2016-10-12 1.1 2017-2-6 1.2 本描述/Description of changes First Version Update the package information Update the cover color 0.0014g The contents of this data sheet are subject to change without notice. Please confirm the specifications and delivery conditions when placing your order. © Copyright 2015, Keweixin Electronics All rights reserved Chip Antenna
Waltek Testing Group (Shenzhen) Co., Ltd. Http://www.waltek.com.cn Page 1 of38http://www.waltek.com.cn/ TEST REPORT Reference No.....................: FCC ID................................: WTX22X1103421W-1 2A9JY-DEEPPODS4 Applicant...........................: Address..............................: Product Name...................: Test Model.........................: Standards..........................: Date of Receipt sample ....: Date of Test........................: Date of Issue.....................: Test Result.........................: shenzhen hyeing technology co.ltd Room 1515, Block A, Weidonglong Business Building, No. 2125 Meilong Avenue, Longhua New District, Shenzhen Bluetooth headset Deeppods 4 FCC Part 15.247 November 16, 2022 November 16~20, 2022 November 20, 2022 Pass Remarks: The results shown in this test report refer only to the sample(s) tested, this test report cannot be reproduced, except in full, without prior written permission of the company. The report would be invalid without specific stamp of test institute and the signatures of compiler and approver. Prepared By: Waltek Testing Group (Shenzhen) Co., Ltd. Address: 1/F., Room 101, Building 1, Hongwei Industrial Park, Liuxian 2nd Road, Block 70 Bao'an District, Shenzhen, Guangdong, China Tested by: Reviewed By: Approved & Authorized By: Tom Wang / Project EngineerJason Su / RF ManagerSilin Chen / Manager Reference No.: WTX22X1103421W-1Page 2 of 38 Waltek Testing Group (Shenzhen) Co., Ltd. Http://www.waltek.com.cn http://www.waltek.com.cn/ TABLE OF CONTENTS 1. GENERAL INFORMATION ...................................................................................................................................4 1.1 PRODUCT DESCRIPTION FOR EQUIPMENT UNDER TEST (EUT) ...............................................................................4 1.2 TEST STANDARDS...................................................................................................................................................5 1.3 TEST METHODOLOGY.............................................................................................................................................5 1.4 TEST FACILITY.......................................................................................................................................................5 1.5 EUT SETUP AND TEST MODE.................................................................................................................................6 1.6 MEASUREMENT UNCERTAINTY..............................................................................................................................6 1.7 TEST EQUIPMENT LIST AND DETAILS.....................................................................................................................7 2. SUMMARY OF TEST RESULTS ...........................................................................................................................9 3. ANTENNA REQUIREMENT .................................... ............................................................................................10 3.1 ST ANDARD APPLICABLE.......................................................................................................................................10 3.2 EVALUATION INFORMATION................................................................................................................................. 10 4. POWER SPECTRAL DENSITY ...........................................................................................................................11 4.1 STANDARD APPLICABLE.......................................................................................................................................11 4.2 TEST SETUP BLOCK DIAGRAM.............................................................................................................................11 4.3 TEST PROCEDURE.................................................................................................................................................11 4.4 SUMMARY OF TEST RESULTS/PLOTS....................................................................................................................11 5. DTS BANDWIDTH .................................................................................................................................................12 5.1 ST ANDARD APPLICABLE.......................................................................................................................................12 5.2 TEST SETUP BLOCK DIAGRAM.............................................................................................................................12 5.3 TEST PROCEDURE.................................................................................................................................................12 5.3 SU MMARY OF TEST RESULTS/PLOTS....................................................................................................................12 6. RF OUTPUT POWER ............................................................................................................................................13 6.1 STANDARD APPLICABLE.......................................................................................................................................13 6.2 TEST SETUP BLOCK DIAGRAM.............................................................................................................................13 6.3 TEST PROCEDURE.................................................................................................................................................13 6.4 SUMMARY OF TEST RESULTS/PLOTS....................................................................................................................13 7. FIELD STRENGTH OF SPURIOUS EMISSIONS .............................................................................................14 7.1 ST ANDARD APPLICABLE.......…
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Bluetooth headset FCC ID: 2A9JY-DEEPPODS4 Deeppods 4 Test Setup Photos Radiated emission 30MHz~1GHz Radiated emission above 1GHz Conducted emission
| # | Rule Parts | Frequency Range | Power Output |
|---|---|---|---|
| 1 | 15C | 2.40 GHz - 2.48 GHz | 500.00 µW |