A3LMF1601D-25AMMU (MF1601d)

SAMSUNG Electronics CO., Ltd. (Maetan-dong) 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea Model Number : MF1601d-25A To whom it may it concern: I hereby appoint JongIn KIM to sign letters and applications for any filings with regulatory agencies on our behalf, and to receive and exchange data between our company, the agents company and the agency in connection with certification for any products that our company owns or manufactures. Sincerely, ---------------------------------------------------- Jenni, Chun / General Manager Samsung Electronics America, Inc. Address: 19 Chapin Rd., Building D Pine Brook, NJ 07058 Tel: 1-973-808-6375 Date: April 21, 2021

SAMSUNG Electronics CO., Ltd. (Maetan-dong) 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea Date: April 21, 2021 Compliance Certification Services Certification Division 561F Monterey Road Morgan Hill, CA 95037 To whom it may concern: We, the undersigned, hereby authorize < HCT CO., LTD. >, to act on our behalf in all manners relating to application for equipment authorization, including signing of all documents relating to these matters. Any and all acts carried out by < HCT CO., LTD. > on our behalf shall have the same effect as acts of our own. We, the undersigned, hereby certify that we are not subject to a denial of federal benefits, that includes FCC benefits, pursuant to Section 5301 of the Anti-Drug Abuse Act of 1988, 21 U.S.C. 853(a). In authorizing < HCT CO., LTD. > as our agent, we still recognize that we are responsible to: a) comply with the relevant provisions of the certification program; b) make all necessary arrangements for the conduct of the evaluation, including provision for examining documentation and access to all areas, records (including internal audit reports) and personnel for the purposes of evaluation (e.g. testing, inspection, assessment, surveillance, reassessment) and resolution of complaints; c) make claims regarding certification only in respect of the scope for which certification has been granted; d) do not use our product certification in such a manner as to bring the Certification Division into disrepute and not make any statement regarding our product certification which the Certification Division may consider misleading or unauthorized; e) upon suspension or cancellation of certification, discontinue use of all advertising matter that contains any reference thereto and return any certification documents as required by the Certification Division; f) use certification only to indicate the products are certified as being in conformity with specified standards; g) endeavor to ensure that no certificate or report nor any part thereof is used in a misleading manner; h) ensure that any reference to our product certification in communication media such as documents, brochures or advertising, complies with the requirements of the Certification Division; i) keep a record of all complaints made known to the us relating to the product’s compliance with requirements of the relevant standard and to make these records available to the Certification Division when requested; j) take appropriate action with respect to such complaints and any deficiencies found in products or services that affect compliance with the requirements for certification; k) document the actions taken. This authorization is valid until further written notice from the applicant. Sincerely Yours, Jongin Kim / Principal Research Engineer SAMSUNG Electronics Co.,Ltd (Maetan-dong) 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16677, Republic of Korea REMARK: 1 This authorization letter will be sent along with your application when filing with the Certification Division. 2 Please follow the format and type it on company letterhead and send original to us.

SAMSUNG Electronics CO., Ltd. (Maetan-dong) 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea Date: April 21, 2021 Federal Communications Commission Authorization and Evaluation Division 7435 Oakland Mills Road, Columbia, MD 21046 RE: Request of Confidentiality for FCC ID: A3LMF1601D-25A To Whom It May Concern: Pursuant to Sections 0.457 and 0.459 of the Commission’s Rules (CFR 47), and Section 552 (b) (4) of the Freedom of Information Act, SAMSUNG Electronics Co., Ltd.. hereby requests confidentiality and treatment of certain information accompanying this application. The materials contain trade secrets and proprietary information not customarily released to the public. The public disclosure of these matters might be harmful to the Applicant and provide unjustified benefits to its competitors. We are also hereby request Short-Term Confidentiality for 180 days after the grant as outlined in Public Notice DA 04-1705. This provision will give SAMSUNG Electronics Co., Ltd. temporary confidentiality of commercially sensitive information prior to product release. The requested Confidential and Temporary Confidential exhibits are listed as follows: CONFIDENTIAL AND SHORT-TERM CONFIDENTIAL LIST Exhibit Description CONFIDENTIAL 1 Block Diagram 2 Operational Descriptions 3 Parts Lists and Tune-Up Procedure 4 Schematics 5 Internal Photos 6 User’s Manual SHORT-TERM CONFIDENTIAL 7 External Photos 8 Test-Setup Photos The Applicant understands that pursuant to Rule 0.457, disclosure of this application and all accompanying documentations, where applicable, will not be made public before the date of the Grant for this application. Sincerely, Jongin Kim / Principal Research Engineer SAMSUNG Electronics Co.,Ltd. (Maetan-dong) 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16677, Republic of Korea

SAMSUNG Electronics CO., Ltd. (Maetan-dong) 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea April 21, 2021 Application Examiner / Reviewing Engineer Federal Communications Commission 7435 Oakland Mills Road Columbia, MD 21046 To Whom It May Concern, This is a request to hole the internal photos and user manual for FCC ID: A3LMF1601D-25A under long term confidentiality. The transmitter is a Base Station where access is controlled and only available to trained personnel. Please note that the internal photos are being asked to be confidential under the FCC guidelines that this is a non-consumer device (Base Station) and is inaccessible t o the general public due to the location of the device and it is only serviceable by the licensee or his designated technicians and it must be under a NDA that restricts the disclosure of the information. The user manual is being requested to be confidential under the FCC guidelines that the manual is very technical and is not provided to the general public. The user manual contains proprietary information required for trained installers to commission the base station. The user manual will be used by the licensee or his designated technicians only and it must be under a NDA that restricts the disclosure of the information. Having the subject information easily available to competitors would negate the advantage we have achieved by developing this product. Sincerely, --------------------------------------------------------------- Jongin Kim / Principal Research Engineer SAMSUNG Electronics Co.,Ltd. (Maetan-dong) 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16677, Republic of Korea

FCC ID: A3LMF1601D-25A HCT CO., LTD. 74, Seoicheon-ro 578beon-gil, Majang-myeon, Icheon-si, Gyeonggi-do, 17383, Rep. of KOREA TEL : + 82 31 645 6300 FAX : + 82 31 645 6401 www.hct.co.kr Page １ of 3 EXTERNAL PHOTOGRAPHS FCC ID: A3LMF1601D-25A HCT CO., LTD. 74, Seoicheon-ro 578beon-gil, Majang-myeon, Icheon-si, Gyeonggi-do, 17383, Rep. of KOREA TEL : + 82 31 645 6300 FAX : + 82 31 645 6401 www.hct.co.kr Page ２ of 3 [Front, Top side view] FCC ID: A3LMF1601D-25A HCT CO., LTD. 74, Seoicheon-ro 578beon-gil, Majang-myeon, Icheon-si, Gyeonggi-do, 17383, Rep. of KOREA TEL : + 82 31 645 6300 FAX : + 82 31 645 6401 www.hct.co.kr Page ３ of 3 [Rear, Bottom side view]

■MF1601d-25A –Label attached location

TEST REPORT FCC MPE Test for MF1601d-25A Certification APPLICANT SAMSUNG Electronics Co., Ltd. REPORT NO. HCT-RF-2104-FC011 DATE OF ISSUE April 27, 2021 Tested by Kwang Il Yoon Technical Manager Jong Seok Lee F-TP22-03(Rev.03) HCT CO., LTD. 74, Seoicheon-ro 578beon-gil, Majang-myeon, Icheon-si, Gyeonggi-do, 17383 KOREA Tel. +82 31 634 6300 F ax. +82 31 645 6401 1 / 6 F-TP22-03 (Rev. 03) Page 2 of 6 HCT Co., Ltd. 74, Seoicheon-ro 578beon-gil, Majang-myeon, Icheon-si, Gyeonggi-do, 17383 KOREA Tel. +82 31 634 6300 Fax. +82 31 645 6401 TEST REPORT FCC MPE Test for MF1601d-25A REPORT NO. HCT-RF-2104-FC011 DATE OF ISSUE April 27, 2021 Additional Model - A pplicantSAMSUNG Electronics Co., Ltd. 5-5, Mojeon-Ri, Backsa-Myun, Icheon-Citi, Kyunggi-Do, Korea Eut Type Model Name MMU(MF1601d) MF1601d-25A FCC ID A3LMF1601D-25A The result shown in this test report refer only to the sample(s) tested unless otherwise stated. This test results were applied only to the test methods required by the standard. Report No. HCT-RF-2104-FC011 F-TP22-03 (Rev. 03) Page 3 of 6 REVISION HISTORY The revision history for this test report is shown in table. Revision No. Date of Issue Description 0 April 27, 2021 Initial Release The measurements shown in this report were made in accordance with the procedures indicated, and the emissions from this equipment were found to be within the limits applicable. I assume full responsibility for the accuracy and completeness of these measurements, and for the qualifications of all persons taking them. It is further stated that upon the basis of the measurements made, the equipment tested is capable of operation in accordance with the requirements of the FCC Rules under normal use and maintenance. * The report shall not be reproduced except in full(only partly) without approval of the laboratory. Report No. HCT-RF-2104-FC011 F-TP22-03 (Rev. 03) Page 4 of 6 RF Exposure Statement 1. Limit According to §1.1310, §2.1091 RF exposure is calculated. (B) Limits for General Population/Uncontrolled Exposures Frequency range (MHz) Electric field Strength (V/m) Magnetic field Strength (A/m) Power density (mW/cm²) Averaging time (minutes) 0.3 - 1.34 1.34 - 30 30 - 300 300 - 1500 1500 - 100.000 614 824/f 27.5   1.63 2.19/f 0.073   *(100) *(180/ f²) 0.2 f/1500 1.0 30 30 30 30 30 F = frequency in MHz * = Plane-wave equivalent power density 2. Maximum Permissible Exposure Prediction Prediction of MPE limit at a given distance S = PG/4πR² S = Power density P = power input to antenna G = power gain of the antenna in the direction of interest relative to an isotropic radiator R = distance to the center of radiation of the antenna Report No. HCT-RF-2104-FC011 F-TP22-03 (Rev. 03) Page 5 of 6 3. RESULTS - PCS Max Peak output Power at antenna input terminal 53.04 dBm Max Peak output Power at antenna input terminal 201372.42 mW Prediction distance 1500.00 cm Prediction frequency 1930 ˊ 1995 MHz Antenna Gain(typical) 21.20 dBi Antenna Gain(numeric) 131.83 - Power density at prediction frequency( S) 0.9389 mW/cm 2 MPE limit for uncontrolled exposure at prediction frequency 1.0000 mW/cm 2 Max Peak output Power at antenna input terminal 53.04 dBm Max Peak output Power at antenna input terminal 201372.42 mW Prediction distance 2100.00 cm Prediction frequency 1930 ˊ 1995 MHz Antenna Gain(typical) 21.20 dBi Antenna Gain(numeric) 131.83 - Power density at prediction frequency( S) 0.4790 mW/cm 2 MPE limit for uncontrolled exposure at prediction frequency 1.0000 mW/cm 2 Report No. HCT-RF-2104-FC011 F-TP22-03 (Rev. 03) Page 6 of 6 - AWS Max Peak output Power at antenna input terminal 53.04 dBm Max Peak output Power at antenna input terminal 201372.42 mW Prediction distance 1500.00 cm Prediction frequency 2110 - 2200 MHz Antenna Gain(typical) 21.40 dBi Antenna Gain(numeric) 138.04 - Power density at prediction frequency( S) 0.9831 mW/cm 2 MPE limit for uncontrolled exposure at prediction frequency 1.0000 mW/cm 2 Max Peak output Power at antenna input terminal 53.04 dBm Max Peak output Power at antenna input terminal 201372.42 mW Prediction distance 2100.00 cm Prediction frequency 2110 - 2200 MHz Antenna Gain(typical) 21.40 dBi Antenna Gain(numeric) 138.04 - Power density at prediction frequency( S) 0.5016 mW/cm 2 MPE limit for uncontrolled exposure at prediction frequency 1.0000 mW/cm 2 Simultaneous band emission conditions Band MPE Ratio (Power density / Limit) Sum of MPE Ratio PCS 0.4790 0.9806 ͕ 1 AWS 0.5016 *Note 1. The result of each band was applied to the worst value. 2. MPE ratios are calculated as [(Power density1 / MPE Limit) + [(Power density2 / MPE Limit) + ] ͕ 1

TEST REPORT FCC Test for MF1601d-25A APPLICANT SAMSUNG Electronics Co., Ltd. REPORT NO. HCT-RF-2104-FC010-R1 DATE OF ISSUE May 14, 2021 Tested by Kwang Il Yoon Technical Manager Jong Seok Lee F-TP22-03(Rev.03) HCT CO., LTD. 74, Seoicheon-ro 578beon-gil, Majang-myeon, Icheon-si, Gyeonggi-do, 17383 KOREA Tel. +82 31 634 6300 F ax. +82 31 645 6401 1 / 786 F-TP22-03 (Rev. 03) Page 2 of 786 HCT Co., Ltd. 74, Seoicheon-ro 578beon-gil, Majang-myeon, Icheon-si, Gyeonggi-do, 17383 KOREA Tel. +82 31 634 6300 Fax. +82 31 645 6401 TEST REPORT FCC Test for MF1601d-25A REPORT NO. HCT-RF-2104-FC010-R1 DATE OF ISSUE May 14, 2021 Additional Model - Applicant SAMSUNG Electronics Co., Ltd. 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16677, Rep. of Korea EUT Type MMU(MF1601d) Model Name MF1601d-25A FCC ID A3LMF1601D-25A Date of Test April 05, 2021~ May 13, 2021 FCC Rule Parts: FCC CFR 47 Part 2, Part 24, Part 27 The result shown in this test report refer only to the sample(s) tested unless otherwise stated. This test results were applied only to the test methods required by the standard. F-TP22-03 (Rev. 03) Page 3 of 786 Report No. HCT-RF-2104-FC010-R1 REVISION HISTORY The revision history for this test report is shown in table. Revision No. Date of Issue Description 0 April 27, 2021 Initial Release 1 May 14, 2021 - Revised the emission designator on page 6. - Revised the test diagrams of conducted test on page 12. - Revised the test results from 2110 MHz ~2200 MHz to 2110 MHz ~ 2180 MHz The measurements shown in this report were made in accordance with the procedures indicated, and the emissions from this equipment were found to be within the limits applicable. I assume full responsibility for the accuracy and completeness of these measurements, and for the qualifications of all persons taking them. It is further stated that upon the basis of the measurements made, the equipment tested is capable of operation in accordance with the requirements of the FCC Rules under normal use and maintenance. * The report shall not be reproduced except in full(only partly) without approval of the laboratory. F-TP22-03 (Rev. 03) Page 4 of 786 Report No. HCT-RF-2104-FC010-R1 CONTENTS 1. GENERAL INFORMATION 5 1.1. APPLICANT INFORMATION 5 1.2. PRODUCT INFORMATION 5 1.3. TEST INFORMATION 7 2. FACILITIES AND ACCREDITATIONS 8 2.1. FACILITIES 8 2.2. EQUIPMENT 8 3. TEST SPECIFICATIONS 9 3.1. STANDARDS 9 3.2. ADDITIONAL DESCRIPTIONS ABOUT TEST 10 3.3. MAXIMUM MEASUREMENTUNCERTAINTY 11 3.4. STANDARDS ENVIRONMENTAL TEST CONDITIONS 11 3.5. TEST DIAGRAMS 12 4. TEST EQUIPMENTS 14 5. TEST RESULT 15 5.1. RF OUTPUT POWER 15 5.2. OCCUPIED BANDWIDTH 301 5.3. UNWANTED CONDUCTED EMISSIONS 491 5.4. BAND EDGE 635 5.5. RADIATED EMISSIONS 778 5.6. FREQUENCY STABILITY 783 6. Annex B_EUT AND TEST SETUP PHOTO 786 F-TP22-03 (Rev. 03) Page 5 of 786 Report No. HCT-RF-2104-FC010-R1 1. GENERAL INFORMATION 1.1. APPLICANT INFORMATION Company Name Samsung Electronics Co., Ltd. Company Address 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16677, Rep. of Korea 1.2. PRODUCT INFORMATION EUT Type MMU(MF1601d) EUT Serial Number DKN2104012 Power Supply -48 VDC Output Power Band Carrier Bandwidth Power LTE Band 25 (B25) 1 5 MHz 2.5 W/path, Total: 40 W LTE Band 25 (B25) 1 10 MHz 5 W/path, Total: 80 W LTE Band 25 (B25) 1 15 MHz 7.5 W/path, Total: 120 W LTE Band 25 (B25) 1 20 MHz 10 W/path, Total: 160 W LTE Band 66 (B66) 1 5 MHz 2.5 W/path, Total: 40 W LTE Band 66 (B66) 1 10 MHz 5 W/path, Total: 80 W LTE Band 66 (B66) 1 15 MHz 7.5 W/path, Total: 120 W LTE Band 66 (B66) 1 20 MHz 10 W/path, Total: 160 W B25 + B25 2 5 MHz + 10 MHz 10 W/path, Total: 160 W B66 + B66 2 10 MHz + 20 MHz 10 W/path, Total: 160 W B25 + B25 + B25 3 5 MHz + 10 MHz + 10 MHz 10 W/path, Total: 160 W B25 + B25 + B25 3 5 MHz + 10 MHz + 15 MHz 10 W/path, Total: 160 W B66 + B66 + B66 3 10 MHz + 10 MHz + 15 MHz 10 W/path, Total: 160 W B66 + B66 + B66 3 10 MHz + 15 MHz + 20 MHz 10 W/path, Total: 160 W B66 + B66 + B66 4 10 MHz + 10 MHz + 10 MHz + 20 MHz 10 W/path, Total: 160 W Frequency Range LTE Band 25 (B25) : 1930 MHz ~ 1995 MHz *The test results are in the frequency range of Band 25, but include Band 2. LTE Band 66 (B66) : 2110 MHz ~ 2180 MHz F-TP22-03 (Rev. 03) Page 6 of 786 Report No. HCT-RF-2104-FC010-R1 Emission Designator Mode Bandwidth Emission Designator QPSK (G7D) 16/64/256 QAM (W7D) LTE B25 5 MHz 4M53G7D 4M54W7D LTE B25 10 MHz 9M03G7D 9M05W7D LTE B25 15 MHz 13M6G7D 13M6W7D LTE B25 20 MHz 18M0G7D 18M0W7D LTE B66 5 MHz 4M53G7D 4M54W7D LTE B66 10 MHz 9M02G7D 9M04W7D LTE B66 15 MHz 13M5G7D 13M5W7D LTE B66 20 MHz 18M0G7D 18M1W7D LTE B25 (Contiguous) 5 MHz + 15 MHz 19M0G7D 19M0W7D LTE B25 (Non-Contiguous) 5 MHz + 15 MHz 18M0G7D 18M0W7D LTE B25 (Non-Contiguous) 15 MHz + 5 MHz 18M0G7D 18M1W7D LTE B66 (Contiguous) 10 MHz + 20 MHz 28M5G7D 28M6W7D LTE B66 (Non-Contiguous) 10 MHz + 20 MHz 27M1G7D 27M1W7D LTE B25 (Contiguous) 5 MHz + 10 MHz + 10 MHz 24M2G7D 24M2W7D LTE B25 (Non-Contiguous) 5 MHz + 10 MHz + 10 MHz 23M5G7D 23M5W7D LTE B25 (Non-Contiguous) 10 MHz + 10 MHz + 5 MHz 23M5G7D 23M5W7D LTE B25 (Contiguous) 5 MHz + 10 MHz + 15 MHz 29M0G7D 29M0W7D LTE B25 (Non-Contiguous) 5 MHz + 10 MHz + 15 MHz 28M2G7D 28M3W7D LTE B25 (Non-Contiguous) 10 MHz + 15 MHz + 5 MHz 28M3G7D 28M2W7D LTE B66 (Contiguous) 10 MHz + 10 MHz + 15 MHz 33M7G7D 33M7W7D LTE B66 (Non-Contiguous) 15 MHz + 10 MHz + 10 MHz 32M7G7D 32M8W7D LTE B66 (Non-Contiguous) 10 MHz + 15 MHz + 10 MHz 32M7G7D 32M8W7D LTE B66 (Contiguous) 10 MHz + 15 MHz + 20 MHz 43M4G7D 43M4W7D LTE B66 (Non-Contiguous) 10 MHz + 15 MHz + 20 MHz 42M2G7D 42M2W7D LTE B66 (Non-Contiguous) 10 MHz + 20 MHz + 15 MHz 42M0G7D 42M0W7D LTE B66 (Contiguous) 10 MHz + 10 MHz + 10 MHz + 20 MHz 48M4G7D 48M4W7D LTE B66 (Non-Contiguous) 10 MHz + 20 MHz + 10 MHz + 10 MHz 47M4G7D 47M4W7D LTE B66 (Non-Contiguous) 10 MHz + 10 MHz + 20 MHz + 10 MHz 47M4G7D 47M4W7D F-TP22-03 (Rev. 03) Page 7 of 786 Report No. HCT-RF-2104-FC010-R1 Channel Bandwidths Port 1 ~ Port 16 : LTE Band 2…

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F-TP22-03 (Rev. 03) Page 504 of 786 Report No. HCT-RF-2104-FC010-R1 LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [2 Carrier] Test Result for Output Port 6 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK Low -39.986 -38.970 -36.971 -39.903 -30.560 -35.564 -33.102 High -29.564 -38.753 -36.267 -33.424 -30.148 -34.984 -32.274 16QAM Low -36.026 -38.523 -36.188 -39.294 -30.664 -35.671 -32.120 High -31.527 -38.138 -36.850 -33.541 -29.858 -33.738 -32.598 64QAM Low -41.247 -37.717 -36.372 -39.848 -30.727 -35.250 -33.079 High -30.770 -36.739 -36.142 -33.547 -29.416 -35.483 -32.397 256QAM Low -40.349 -38.956 -35.652 -39.469 -30.389 -35.110 -32.323 High -31.299 -36.565 -36.585 -33.172 -30.000 -34.198 -31.803 Test Result for Output Port 8 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK Middle -39.332 -39.433 -36.044 -33.276 -30.237 -33.763 -33.272 16QAM Middle -35.535 -38.086 -36.331 -33.328 -31.091 -35.048 -33.571 64QAM Middle -35.679 -39.288 -36.088 -33.909 -30.703 -35.435 -33.554 256QAM Middle -34.600 -37.792 -35.225 -32.781 -31.349 -34.750 -32.501 F-TP22-03 (Rev. 03) Page 505 of 786 Report No. HCT-RF-2104-FC010-R1 LTE Band 25 5 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier [3 Carrier] Test Result for Output Port 7 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK Low -40.792 -42.226 -32.219 -32.159 -29.198 -28.823 -26.370 Middle -34.254 -33.795 -32.122 -30.321 -29.089 -28.050 -26.138 High - - - - -31.039 -28.643 -26.334 16QAM Low -36.439 -37.581 -31.404 -31.982 -29.048 -28.589 -26.648 Middle -38.013 -35.004 -31.829 -30.005 -28.363 -28.341 -26.338 64QAM Low -38.055 -39.413 -31.516 -32.329 -29.151 -28.283 -26.821 Middle -37.022 -34.027 -32.211 -30.123 -28.938 -28.636 -26.582 High - - - - -32.069 -28.504 -26.271 256QAM Low -42.472 -40.563 -32.014 -32.694 -29.243 -28.901 -26.440 Middle -33.889 -36.446 -31.958 -30.218 -28.599 -28.725 -26.084 Test Result for Output Port 13 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK High -36.499 -38.288 -32.057 -30.320 -30.962 -28.528 -26.174 16QAM High -38.733 -36.171 -31.903 -30.285 -30.616 -28.707 -26.648 64QAM High -36.316 -38.869 -32.369 -30.437 -30.969 -28.046 -26.615 256QAM High -39.402 -35.426 -32.347 -30.457 -30.402 -28.030 -26.524 F-TP22-03 (Rev. 03) Page 506 of 786 Report No. HCT-RF-2104-FC010-R1 LTE Band 25 5 MHz 1 Carrier + LTE Band 25 5 MHz 1 Carrier + LTE Band 25 15 MHz 1 Carrier [3 Carrier] Test Result for Output Port 8 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK Middle -38.408 -37.232 -32.169 -29.533 -28.170 -28.356 -26.257 16QAM Middle -34.608 -38.711 -32.229 -29.019 -27.274 -28.966 -26.451 64QAM Middle -35.763 -39.096 -31.972 -30.258 -28.216 -28.562 -26.147 256QAM Middle -36.934 -37.716 -32.014 -30.009 -28.053 -28.756 -26.126 Test Result for Output Port 9 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK High -40.280 -40.385 -32.347 -30.346 -31.190 -28.138 -27.445 16QAM High -35.895 -34.139 -31.881 -30.543 -31.039 -28.678 -28.022 64QAM High -39.178 -40.002 -32.279 -30.622 -31.010 -28.615 -28.006 256QAM High -41.203 -38.999 -31.736 -30.537 -30.777 -28.983 -27.859 Test Result for Output Port 13 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK Low -39.291 -39.267 -32.159 -33.592 -28.392 -28.193 -26.503 16QAM Low -36.506 -39.635 -32.254 -33.527 -28.320 -28.183 -26.162 64QAM Low -38.954 -39.664 -31.844 -33.584 -28.307 -28.642 -26.499 256QAM Low -39.338 -38.099 -32.031 -33.188 -28.318 -28.721 -26.764 F-TP22-03 (Rev. 03) Page 507 of 786 Report No. HCT-RF-2104-FC010-R1 LTE Band 66 10 MHz 1 Carrier + LTE Band 66 10 MHz 1 Carrier + LTE Band 66 15 MHz 1 Carrier [3 Carrier] Test Result for Output Port 6 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK Low -33.128 -36.271 -35.626 -39.305 -30.757 -35.172 -33.059 16QAM Low -32.406 -38.120 -35.410 -39.677 -31.087 -34.651 -32.759 64QAM Low -31.971 -37.351 -35.612 -39.051 -31.184 -34.343 -33.507 256QAM Low -31.970 -38.043 -36.127 -39.987 -31.167 -34.491 -30.913 Test Result for Output Port 8 Mod. Channel Measured Level (dBm) 9 kHz ~ 150 kHz 150 kHz ~ 30 MHz 30 MHz ~ Low Edge ˊ 100 MHz Low Edge ˊ 100 MHz ~ Low Edge High Edge ~ High Edge + 100 MHz High Edge + 100 MHz ~ 10 GHz 10 GHz ~ 26.5 GHz QPSK Middle -33.461 -37.466 -35.706 -32.415 -30.748 -34.541 -32.039 High -31.121 -36.321 -35.784 -33.458 -30.819 -34.023 -31.862 16QAM Middle -32.762 -37.926 -35.503 -31.851 -30.718 -33.638 -31.858 High -29.522 -37.029 -35.960 -33.415 -31.287 -34.721 -32.078 64QAM Middle -32.522 -37.922 -36.464 -33.189 -31.239 -35.018 -32.240 High -32.036 -36.688 -35.949 -33.554 -30.263 -34.603 -32.538 256QAM Middle -31.514 -39.166 -36.532 -30.084 -29.600 -34.609 -32.478 High -32.077 -37.996 -35.658 -33.764 -31.035 -35.560 -33.904 F-TP22-0…

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F-TP22-03 (Rev. 03) Page 581 of 786 Report No. HCT-RF-2104-FC010-R1 Port 8 / High Edge ~ High Edge+100 / LTE Band 66 10 MHz 1 Carrier + LTE Band 66 10 MHz 1 Carrier + LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [4 Carrier] / QPSK / Middle Port 8 / High Edge+100 ~ 10 GHz / LTE Band 66 10 MHz 1 Carrier + LTE Band 66 10 MHz 1 Carrier + LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [4 Carrier] / 256QAM / High F-TP22-03 (Rev. 03) Page 582 of 786 Report No. HCT-RF-2104-FC010-R1 Port 3 / 10 GHz ~ 26.5 GHz/ LTE Band 66 10 MHz 1 Carrier + LTE Band 66 10 MHz 1 Carrier + LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [4 Carrier] / 256QAM / Low F-TP22-03 (Rev. 03) Page 583 of 786 Report No. HCT-RF-2104-FC010-R1 Port 8 / 9 kHz ~ 150 kHz / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 15 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 64QAM / Low Port 8 / 150 kHz ~ 30 MHz / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 15 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 16QAM / Low F-TP22-03 (Rev. 03) Page 584 of 786 Report No. HCT-RF-2104-FC010-R1 Port 8 / 30 MHz ~ Low Edge-100 / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 15 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 16QAM / Low Port 8 / Low Edge-100 ~ Low Edge / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 15 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 64QAM / Low F-TP22-03 (Rev. 03) Page 585 of 786 Report No. HCT-RF-2104-FC010-R1 Port 13 / High Edge ~ High Edge+100 / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 15 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 16QAM / Middle Port 8 / High Edge+100 ~ 10 GHz / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 15 MHz 1 Carrier [2 Carrier](Non-Contiguous) / QPSK / Low F-TP22-03 (Rev. 03) Page 586 of 786 Report No. HCT-RF-2104-FC010-R1 Port 8 / 10 GHz ~ 26.5 GHz/ LTE Band 25 5 MHz 1 Carrier + LTE Band 25 15 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 64QAM / Low F-TP22-03 (Rev. 03) Page 587 of 786 Report No. HCT-RF-2104-FC010-R1 Port 13 / 9 kHz ~ 150 kHz / LTE Band 25 15 MHz 1 Carrier + LTE Band 25 5 MHz 1 Carrier [2 Carrier](Non-Contiguous) / QPSK / Low Port 13 / 150 kHz ~ 30 MHz / LTE Band 25 15 MHz 1 Carrier + LTE Band 25 5 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 256QAM / Low F-TP22-03 (Rev. 03) Page 588 of 786 Report No. HCT-RF-2104-FC010-R1 Port 13 / 30 MHz ~ Low Edge-100 / LTE Band 25 15 MHz 1 Carrier + LTE Band 25 5 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 16QAM / Low Port 13 / Low Edge-100 ~ Low Edge / LTE Band 25 15 MHz 1 Carrier + LTE Band 25 5 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 256QAM / Low F-TP22-03 (Rev. 03) Page 589 of 786 Report No. HCT-RF-2104-FC010-R1 Port 13 / High Edge ~ High Edge+100 / LTE Band 25 15 MHz 1 Carrier + LTE Band 25 5 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 16QAM / High Port 13 / High Edge+100 ~ 10 GHz / LTE Band 25 15 MHz 1 Carrier + LTE Band 25 5 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 16QAM / Low F-TP22-03 (Rev. 03) Page 590 of 786 Report No. HCT-RF-2104-FC010-R1 Port 13 / 10 GHz ~ 26.5 GHz/ LTE Band 25 15 MHz 1 Carrier + LTE Band 25 5 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 16QAM / Low F-TP22-03 (Rev. 03) Page 591 of 786 Report No. HCT-RF-2104-FC010-R1 Port 6 / 9 kHz ~ 150 kHz / LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [2 Carrier](Non-Contiguous) / QPSK Port 6 / 150 kHz ~ 30 MHz / LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 256QAM F-TP22-03 (Rev. 03) Page 592 of 786 Report No. HCT-RF-2104-FC010-R1 Port 8 / 30 MHz ~ Low Edge-100 / LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [2 Carrier](Non-Contiguous) / QPSK Port 6 / Low Edge-100 ~ Low Edge / LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 64QAM F-TP22-03 (Rev. 03) Page 593 of 786 Report No. HCT-RF-2104-FC010-R1 Port 6 / High Edge ~ High Edge+100 / LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [2 Carrier](Non-Contiguous) /QPSK Port 6 / High Edge+100 ~ 10 GHz / LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [2 Carrier](Non-Contiguous) / 16QAM F-TP22-03 (Rev. 03) Page 594 of 786 Report No. HCT-RF-2104-FC010-R1 Port 8 / 10 GHz ~ 26.5 GHz/ LTE Band 66 10 MHz 1 Carrier + LTE Band 66 20 MHz 1 Carrier [2 Carrier](Non-Contiguous) / QPSK F-TP22-03 (Rev. 03) Page 595 of 786 Report No. HCT-RF-2104-FC010-R1 Port 5 / 9 kHz ~ 150 kHz / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier [3 Carrier](Non- Contiguous) / QPSK / Low Port 5 / 150 kHz ~ 30 MHz / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier [3 Carrier](Non- Contiguous) / QPSK / Low F-TP22-03 (Rev. 03) Page 596 of 786 Report No. HCT-RF-2104-FC010-R1 Port 5 / 30 MHz ~ Low Edge-100 / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier [3 Carrier](Non- Contiguous) / QPSK / Low Port 5 / Low Edge-100 ~ Low Edge / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier [3 Carrier](Non-Contiguous) / QPSK / Low F-TP22-03 (Rev. 03) Page 597 of 786 Report No. HCT-RF-2104-FC010-R1 Port 5 / High Edge ~ High Edge+100 / LTE Band 25 5 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier + LTE Band 25 10 MHz 1 Carrier [3 Carrier](Non-Contiguous) / QPSK / High Por…

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