ONHJVX3IMOBILE PHONE

T-WORD TECHNOLOGY(HK)CO., LIMITED Model: JV X3i FCC RF Exposure Information and Statement The SAR limit of USA (FCC) is 1.6 W/kg averaged over one gram of tissue. Device types JV X3i, JV X30, JV 3X, JV A3, JVX21, JV C3 (FCC ID: ONHJVX3I) has also been tested against this SAR limit. The highest SAR value reported under this standard during product certification for use at the ear is 0.745W/kg and when properly worn on the body is 0.746W/kg. This device was tested for typical body-worn operations with the back of the handset kept 1.5cm from the body. To maintain compliance with FCC RF exposure requirements, use accessories that maintain a 1.5cm separation distance between the user's body and the back of the handset. The use of belt clips, holsters and similar accessories should not contain metallic components in its assembly. The use of accessories that do not satisfy these requirements may not comply with FCC RF exposure requirements, and should be avoided. FCC WARNING This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. NOTE 1: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures: - Reorient or relocate the receiving antenna. - Increase the separation between the equipment and receiver. -Connect the equipment into an outlet on a circuit different from that to which the receiver is connected. -Consult the dealer or an experienced radio/TV technician for help. NOTE 2: Any changes or modifications to this unit not expressly approved by the party responsible for compliance could void the user's authority to operate the equipment. REPORT NO.: STR12068255I-1 FCC PART 22H&24E

T-WORLD TECHNOLOGY(HK)CO., LIMITED Room 3807,3808AB,3818, 3810,38F,Saige Plaza, Huaqiang Road, Futian, Shenzhen -------------------------------------------------------------------------------- FCC ID: ONHJVX3I Product: Mobile Phone Models: JV X3i,JV X30, JV 3X, JV A3, JV X21, JV C3 POWER OF ATTORNEY DATE: 2012-07-12 Federal Communications Commission Authorization and Evaluation Division 7435 Oakland Mills Road Columbia, MD 21046 To Whom It May Concern: We, the undersigned, hereby authorize SEM.Test Compliance Service Co., Ltd. Jandy So on our behalf, to apply to the Federal Communications Commission on our equipment. Any and all acts carried out by SEM.Test Compliance Service Co., Ltd. Jandy So on our behalf shall have the same effect as acts of our own. This is to advise that we are in full compliance with the Anti-Drug Abuse Act. We, T-WORLD TECHNOLOGY(HK)CO., LIMITED, are not subject to a denial of federal benefits pursuant to Section 5301 of the Anti-Drug Act of 1988, 21 USC853a, and no party to the application is subject to a denial of federal benefits pursuant to that section. Sincerely,

T-WORD TECHNOLOGY(HK)CO., LIMITED Model: JV X3i REPORT NO.: STR12068255I-1 FCC PART 22H&24E EXHIBIT 1- PRODUCT LABELING FCC ID: ONHJVX3I Specifications : Text is Black in color and justified. Labels are printed in indelible ink on permanent adhesive silk-screened onto the EUT or shall be affixed at a conspicuous location on the EUT. FCC ID Label Location

Operational Description The transmit chain of the SR528 consists of a direct LO modulation transmit path for GSM (GMSK). The LO is modulated directly by the baseband signal by a digital delta-sigma modulator. The modulated output of the modulator is mixed with a DC voltage and the resultant output is then converted to a single ended waveform via an on chip balun. The RF output power level is adjusted to an appropriate level via the on chip RF attenuator. The RF ports of the transmitter are single-ended and matched to 50Ω. No off-chip RF baluns or filters are required. Frequency Sources There are two frequency sources on the SR528. The first is the RF frequency synthesizer, which serves as the LO for both receive and transmit chains. The VCO for the synthesizer is fully integrated and no calibration is required as this is all performed automatically on the SR528. During reception or transmission in normal operation, the frequency synthesizer is operated at twice the desired channel of operation in PCS and DCS modes and at four times the desired channel of operation in EGSM and USGSM modes. On-chip dividers (÷2 for PCS/DCS and ÷4 EGSM/USGSM) reduce the frequency of the signal. The outputs of these dividers are buffered before being applied to the up or down converters. The loop filter of the frequency synthesizer is fully integrated. This reduced component count and form factor minimizes the number of sensitive components in the design. The second frequency source is the Digitally Controlled Crystal Oscillator (DCXO). The DCXO is designed to accept a crystal with fundamental frequency of 26MHz. After power-on of the chip, the DCXO starts oscillating. It continues oscillating until power-off or programming of doze mode. The reference oscillator can be used with a 26MHz crystal. In this configuration, the reference frequency is controlled by on-chip capacitor banks that can be switched in via the RCB. This allows for precise tuning of the crystal when implemented with a conventional Automatic Frequency Control (AFC) loop. The SR528 can also be supplied with an external reference such as a 26MHz VCTCXO or other frequency source. The reference clock signal generated in the chip is buffered before being sent to the Phase Locked Loop in the frequency synthesizer block. Either a square wave or a clipped sine wave can be selected. The buffer is capable of driving a reference clock line with a load capacitance of 10pF. There are two 26MHz reference clock output ports on the SR528, REF OUT and REF2 OUT. Each output is independently controlled by its enable ports, REF EN and REF2 EN.

NO.1 Comment describing Footprint Designator dosage R 1 0R Resistor,0 ohm,±5%,1/16W,0402 0402 C419,LZ7,R100,R122,C450,R38 -R39,C463,LZ11,R32,R3 11 2 0.36 Resistor,0.36 ohm,±1%,1/4W,0805 0402 R300 1 3 15R Resistor,10 ohm,±5%,1/16W,0402 0402 R35 1 4 33R Resistor,33 ohm,±5%,1/16W,0402 0402 R11,R205,R208,R105,R115-R 116 6 6 510R Resistor,510 ohm,±5%,1/16W,0402 0402 R200,R209 2 7 1K Resistor,1K ohm,±5%,1/16W,0402 0402 R2,R204,R440-R441,R0201,R15,R19,R23,R24 9 8 2K Resistor,2K ohm,±5%,1/16W,0402 0402 R206,R49 2 9 5.1K Resistor,5.1K ohm,±5%,1/16W,0402 0402 R24 3 9 10K Resistor,10K ohm,±5%,1/16W,0402 0402 R801,R14,R213 3 10 47K Resistor,51K ohm,±5%,1/16W,0402 0402 R18,R5,R20,R40,R8 5 11 47K Resistor,75K ohm,±5%,1/16W,0402 0402 R1,R215 2 C 12 1.5pF Capacitor,1.5pF,±0.25pF,50V,COG,0402 0402 C414-C417 4 13 2.2pF Capacitor,2.2pF,±0.25pF,50V,COG,0402 0402 C404-C405,C432-C 433 4 14 3.3pF Capacitor,3.3pF,±0.25pF,50V,COG,0402 0402 C425-426,C452-453 4 15 4.7pF Capacitor,4.7pF,±0.25pF,50V,COG,0402 0402 C418 1 16 10pF Capacitor,10pF,±5%,50V,COG,0402 0402 C1205 1 17 22pF Capacitor,22pF,±5%,50V,COG,0402 0402 C109-C110,C439 3 18 27pF Capacitor,27pF,±5%,50V,COG,0402 0402 C62-C63,C442-C444,C447,C23,ED3-ED6,ED400-ED403 15 19 33pF Capacitor,33pF,±5%,50V,COG,0402 0402 C7,C10,C14,C19-C21,C26,C28-C29,C31-C33,C35-C36 , C42-C43 , VR2 17 20 47pF Capacitor,47pF,±5%,50V,COG,0402 0402 C9,C30,C37,C40,C435,C441 6 21 56pF Capacitor,56pF,±5%,50V,COG,0402 0402 C440 1 22 100pF Capacitor,100pF,±5%,50V,COG,0402 0402 C250,C8,C13,C15,C44,C219,C113,C406,C407,C411,C424,C18,C1243 13 23 470pF Capacitor,470pF,±10%,50V,X7R,0402 0402 C103 1 24 680pF Capacitor,680pF,±10%,50V,COG,0402 0402 C402-C403 2 25 1nF Capacitor,1nF,±10%,50V,X7R,0402 0402 C16,R402 2 26 10nF Capacitor,10nF,±10%,16V,X7R,0402 0402 C107,C300,C25,C221 4 27 22nF Capacitor,22nF,±10%,16V,X7R,0402 0402 C200,C204,C206,C212 4 28 100nF Capacitor,100nF,±10%,10V,X5R,0402 0402 C38,C217,C101,C446,C61,C600,C800-C803 , C6 , C12 12 29 1uF Capacitor,1uF,±10%,10V,X5R,0603 0603 C5 1 30 1uF Capacitor,1uF,±10%,6.3V,X5R,0402 0402 C1,C24,C17,C58-C59,C68-C69,C102,C104-C106,C115,C313,C420-C42 1,C34 16 31 2.2uF Capacitor,2.2uF,±20%,6.3V,X5R,0402 0603 C60,C112,C304-C305,C308-C310,C312,C202 9 32 4.7uF Capacitor,4.7uF,±10%,6.3V,X5R,0603 0603 C2,C22,C218 3 33 10uF Capacitor,10uF,±20%,6.3V,X5R,0805 0805 C11,C201,C213,C100,C108,C303,C445,C624 8 L 34 2.4nH Inductor,2.4nH,±0.3nH,0402,SDCL1005C2N4STDF,SUNLORD 0402 L417,L3 2 35 10nH (T)Inductor,6.2nH,±0.3nH,0402,CLH1005T-6N2S-S 0402 L405,L40 71 36 22nH (T)Inductor,6.8nH,±5%,0402,CLH1005T-6N8J-S 0402 L406 2 37 15nH (T)Inductor,10nH,±5%,0402,CLH1005T-10NJ-S 0402 L400 1 38 100nH Inductor,100nH,±5%,0402,SDCL1005CR10JTDF,Sunlord 0402 L1 1 40 0402 (S)Bead Core,1000 ohm,250mA,0402,HZ1005K102TFB01,SUNLORD 0402 LZ201-LZ202,LZ207-LZ208 4 41 0402 Bead Core,75 ohm,0402,SZ1005G750TF,Sunlord 0402 LZ1-LZ2 2 42 HZ1005K182TF Bead Core,1.8K ohm,50mA,0402,HZ1005K182TF,SUNLORD 0402 LZ3-LZ5 3 43 DIODE Diode,SIG631E30T1G,SOD-523,SIG SOD-523 D413 1 44 MOSFET (S)IC,MOSFET WITH SCHOTTKY,WPM2005B-8/TR,DFN3x2-8L,WILL FET ,TPCF8 B Q301 1 45 LED 0603 LED,BL-HB336G-TRB,BRIGHT 0603 LD1,LD4-LD5,LD34 4 46 NPN NPN,SC-75,2SC4617TLQ,ROHM SC-59 Q5 1 47 TVS (S)ZENER,5.1V,SOD-523,SIG5V1T1G,SIG SOD523 TVS301 1 48 CPU (S)IC,SC6610 BGA-200 U100 1 49 RF PA (S)IC,,GSM,RPF88162B,RENESAS 22PAD U403 1 50 RFTRANSCEI (S)IC,(GSM),SR528, QFN-28 U404 1 51 SAW (DCS/EGSM),SFR942PY002,WISOL 10 PAD U405 1 52 SAW SAW,PCS1900-RX,SF14-1960M5UB50/A1,KYOCERA 5 PAD U400 53 SAW SAW,850-RX,SF14-0881M5UB50/A1,KYOCERA 5 PAD U410 1 54 MEMORY (S)IC(MEMORY),Serial Flash(32Mb 120MHZ),3.0V,WSON8 6X5X0.8mm,SC2112 A WSON8 U101 1 55 AUDIO PA SN4990DIF09E,SI-EN CSP-9 U201 1 56 BT 6x6mm,40Pin QFN,RDA5876,RDA QFN-40 U1 1 57 CONNECTOR 3.0PITCH,8.4x3.5x6.2mmH,WKBAV006-D31P 8.4x3.5x6.2mmH U9 1 58 SIMSOCKET SIM Card,1.80mmH,SIMMS-00615-TP31(CAF99-06183-1503),LCN 3PIN SIM1 ,SIM400 2 59 T-FLASHSOCKET T-FLASH,1.9mmH,CAH11-08193-SF01,LCN 8PIN TF100 1 60 USBSOCKET MINI USB,12PIN,2.0mmH,MICFS-01215-TP03(UAF05-12204-1501),LCN 12P IN USB400 1 61 CRYSTAL 32.768KHzCrystal,12.5pF,±20ppm,Q13MC1462000200(Q13MC14 61000200),EPSON 4 PAD X200 1 62 CRYSTAL 26MHzCrystal(3225),±10ppm,8.0pf,TN4-26245,EPSON 3225 X400 1 63 PCB PCB,7707-MB-V6.5 91.6mmX36mmX1mm 1

Tune up procedure Tune up procedure shall be over the power range or at specific operating power levels. 1. It must provide an operational voltage (3.4 ~ 4.2V DC) to turn on the device and on one certain channel in service mode by means of company proprietary software. 2. Base station simulator (Agilent 8960) measures the GSM device specific RF characteristics. 3. The maximum gains of each individual device are adjusted until the target value met. z For GSM 850 band： PCL = 5, PWR = 33 ± 1 dBm z For PCS 1900 band： PCL = 5, PWR = 30 ± 1 dBm z For BLUETOOTH PWR = ‐6 ‐ 4 dBm Then these appropriate gain settings are stored in each device individually. The user has no possibility to change these settings later on, and during manufacturing each device will be individual calibrated. The measurement is done in fully calibrated setup, which is based on a Agilent 8960 base station simulator. Furthermore, the highest power level is verified afterwards in a call measurement on three channels (low, middle and high).

Report No.: 127S007R-HP-US-P03V01 Page: 1 of 91 SAR Test Report Product Name : Mobile Phone Model No. : JV X3i, JV X30, JV 3X, JV A3, JV X21, JV C3 FCC ID : ONHJVX3I Applicant : T-WORLD TECHNOLOGY(HK) CO., LIMITED Address : Room 3807, 3808AB, 3818, 3810, 38F, Saige Plaza, Huaqiang Road, Futian, Shenzhen Date of Receipt : 03/07/2012 Date of Test : 06/07/2012 Issued Date : 09/07/2012 Report No. : 127S007R-HP-US-P03V01 Report Version : V1.0 The test results relate only to the samples tested. The test report shall not be reproduced except in full without the written approval of QuieTek Corporation. Report No.: 127S007R-HP-US-P03V01 Page: 2 of 91 Test Report Certification Issued Date: 09/07/2012 Report No.: 127S007R-HP-US-P03V01 Product Name : Mobile Phone Applicant : T-WORLD TECHNOLOGY(HK) CO., LIMITED Address : Room 3807, 3808AB, 3818, 3810, 38F, Saige Plaza, Huaqiang Road, Futian, Shenzhen Manufacturer : QUANZHOU T-WORLD ELECTRONIC EQUIPMENT CO., LTD Address : Room 1301, 13F, Block B, MingXin Garden, Tian An Road, QuanZhou, Futian Model No. : JV X3i, JV X30, JV 3X, JV A3, JV X21, JV C3 FCC ID : ONHJVX3I Brand Name : jivi EUT Voltage : DC 3.7V Applicable Standard : FCC Oet65 Supplement C June 2001 IEEE Std. 1528-2003,47CFR 2.1093 Test Result : Max. SAR Measurement (1g) Head: 0.745W/kg Body: 0.746W/kg Performed Location : Suzhou EMC Laboratory No.99 Hongye Rd., Suzhou Industrial Park Loufeng Hi-Tech Development Zone., Suzhou, China TEL: +86-512-6251-5088 / FAX: +86-512-6251-5098 FCC Registration Number: 800392 Documented By : (Engineering ADM: Alice Ni) Reviewed By : (Engineering Supervisor: Robin Wu) Approved By : (Manager: Marlin Chen) Report No.: 127S007R-HP-US-P03V01 Page: 3 of 91 Laboratory Information We, QuieTek Corporation, are an independent EMC and safety consultancy that was established the whole facility in our laboratories. The test facility has been accredited/accepted(audited or listed) by the following related bodies in compliance with ISO 17025, EN 45001 and specified testing scope: The related certificate for our laboratories about the test site and management system can be downloaded from QuieTek Corporation’s Web Site :http://www.quietek.com/tw/ctg/cts/accreditations.htm The address and introduction of QuieTek Corporation’s laboratories can be founded in our Web site : http://www.quietek.com/ If you have any comments, Please don’t hesitate to contact us. Our contact information is as below: HsinChu Testing Laboratory : No.75-2, 3rd Lin, Wangye Keng, Yonghxing Tsuen, Qionglin Shiang, Hsinchu County 307, Taiwan, R.O.C. TEL:+886-3-592-8858 / FAX:+886-3-592-8859 E-Mail : [email protected] LinKou Testing Laboratory : No.5-22, Ruishukeng, Linkou Dist., New Taipei City 24451, Taiwan, R.O.C. TEL : 886-2-8601-3788 / FAX : 886-2-8601-3789 E-Mail : [email protected] Suzhou Testing Laboratory : No.99 Hongye Rd., Suzhou Industrial Park Loufeng Hi-Tech Development Zone., SuZhou, China TEL : +86-512-6251-5088 / FAX : 86-512-6251-5098 E-Mail : [email protected] Taiwan R.O.C. :BSMI, NCC, TAF Germany :TUV Rheinland Norway :Nemko, DNV USA :FCC, NVLAP Japan :VCCI China :CNAS Report No.: 127S007R-HP-US-P03V01 Page: 4 of 91 TABLE OF CONTENTS Description Page 1. General Information ................................................................................................. 6 1.1. EUT Description .................................................................................................. 6 1.2. Test Procedure .................................................................................................... 7 1.3. Test Environment ................................................................................................. 7 2. SAR Measurement System ...................................................................................... 8 2.1. DASY5 System Description ................................................................................. 8 2.1.1. Applications ..................................................................................................... 9 2.1.2. Area Scans ...................................................................................................... 9 2.1.3. Zoom Scan (Cube Scan Averaging) ................................................................ 9 2.1.4. Uncertainty of Inter-/Extrapolation and Averaging ........................................... 9 2.2. DASY5 E-Field Probe ........................................................................................ 10 2.2.1. Isotropic E-Field Probe Specification ............................................................. 10 2.3. Boundary Detection Unit and Probe Mounting Device ...................................... 11 2.4. DATA Acquisition Electronics (DAE) and Measurement Server ........................ 11 2.5. Robot ................................................................................................................. 12 2.6. Light Beam Unit ................................................................................................. 12 2.7. Device Holder .................................................................................................... 13 2.8. SAM Twin Phantom ........................................................................................... 13 3. Tissue Simulating Liquid ....................................................................................... 14 3.1. The composition of the tissue simulating liquid ................................................. 14 3.2. Tissue Calibration Result ................................................................................... 15 3.3. Tissue Dielectric Parameters for Head and Body Phantoms ............................. 16 4. SAR Measurement Procedure ............................................................................... 17 4.1. SAR System Validation ...................................................................................... 17 4.1.1. Validation Dipoles ...........…

Text truncated - open the document above for the full version.

T-WORD TECHNOLOGY(HK)CO., LIMITED Model: JV X3i REPORT NO.: STR12068255I-1 FCC PART 22H&24E EXHIBIT 4 - TEST SETUP PHOTOGRAPHS Spurious Radiation Test Setup (Below 1G) Spurious Radiation Test Setup (Above1G) T-WORD TECHNOLOGY(HK)CO., LIMITED Model: JV X3i REPORT NO.: STR12068255I-1 FCC PART 22H&24E Extreme Condition Test Setup Mobile Communication Test Setup