X77HKM650Mobile Phone

I User Manual Model Name:HKM650 FCC ID:X77HKM650 II Contents 1 For your safety ....................................................................................1 2 Start to use..........................................................................................3 3 Operation manual...............................................................................6 4 Phonebook..........................................................................................7 5 Messages ............................................................................................8 6 Call center ........................................................................................10 7 Settings.............................................................................................13 8 Multimedia .......................................................................................15 9 File manager.....................................................................................18 10 User profiles...................................................................................18 11 Organizer ........................................................................................20 12 E-book reader.................................................................................22 1 1 For your safety Notice: To use your handset safely and efficiently, please read the following instruction carefully before using and abide by it. Be careful when you are driving. Please abide by the relative local laws and regulations. Use both of your hands to drive! Put the handset in its seat to avoid falling down. The ballonet will charge quickly when it is in danger, please don’t put anything in its security scope, including fixed phone and handset equipment. Otherwise it may cause serious body injuries. The handset must be turned off when you are on the plane. The interference of mobile will influence the flight. It is illegal to use mobile on phone, please power it off. The handset must be turned off when you are in blowing-up area. When you are at a blowing-up area or near it, please abide by the relevant laws and power your mobile off. The handset must be turned off when you are near a danger product. Please do not use mobile when you are near gas station or chemical plant. The handset must be turned off when you are in a hospital. You have to abide by the relevant regulations of hospital and turn your handset off when you are near medical equipment. Any wireless transmission device, including mobile, will interfere those equipment not 2 fully-protected. Interference All the mobile handset may be interfered by the radio and reduce the performance of the handset. Professional service Only the professional can setup or maintain the handset. Improper installation or maintenance would bring out great danger, it also disobey regulations of maintenance guarantee. Accessory and battery Only the appointed accessory and battery can be used. It is suggested that you return the used battery to the factory or put it in the appointed recycle zone. Do not put it together with other rubbish or discard it. Reasonable use Please use the handset in reasonable way. It is prohibited to put your handset in high temperature (over 60°C), such as beside the window where there is sunshine. Please use wet or antistatic cloth to clean the handset. Do not use dry or static cloth to clean it. Your handset is not waterproof, please keep it dry. Emergency call Please make sure the handset is powered on so that it can dial the emergency call. In idle mode, the handset can dial emergency numbers, such as 112 and 911. Press dial key to dial it, report your location and the 3 situation briefly. Do not end the call without permission. Note: this handset, like any other one, may not support all the features because of the network coverage and wireless transmission. Some network even can not support 112. So do not rely totally on your handset about some significant calling (like medical aid). Please refer to the local operator. 2 Start to use Please read the following section carefully before using the handset. It will instruct you how to insert and unlock the SIM card, how to setup and maintain the handset, how to charge the battery, and also the information about digital GSM network. 2.1 Battery installation Please charge the battery after it has been completely used up, and use it after it has been completely charged. Three times later, the battery will be in best status. 2.1.1 Installing and discharging of the battery Pull the cover to take out the battery, and put it inside then close the cover to install it. 2.1.2Charge of the battery z connect the charger with power supply z connect the charge with handset z The battery indication on LCD will bicker. If the handset is powered 4 off when charging, LCD will display “charging”. If you overuse the handset when it is out of battery, LCD will display “charging” a while after you begin to charge it. z When the battery indication is full and stops bickering, it means the handset has been completely charged. If the handset is charged when power off, the indication will also be displayed on LCD. It will take 2 to 3 hours to charge, the battery, the handset and the charger will get warm during the charging time. z Please disconnect the jacket and charger after finishing charging. z The handset can be normally used when it is charging. Warning: the handset must be put in a ventilated place where the temperature is -40°C—+55 .And you must use the charger supplied by the factory.°C It is dangerous not to use the appointed charger, and it will break the guarantee terms of the handset. 2.1.3 Use of the battery When the handset is powered off automatically or when there is low battery indication, you should charge it in time. If the battery is not run out of energy before charging, the handset will adjust and reduce the time of charging. The idle time and talk time of the handset specified by the …

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FCC ID: X77HKM650 Report No.: STS100808F3 INTERNAL PHOTO OF SAMPLE – 1 INTERNAL PHOTO OF SAMPLE –2 FCC ID: X77HKM650 Report No.: STS100808F3 INTERNAL PHOTO OF SAMPLE –3 INTERNAL PHOTO OF POWER SUPPLY-1 FCC ID: X77HKM650 Report No.: STS100808F3 INTERNAL PHOTO OF POWER SUPPLY-2

1/2 Operation Description OPERATIONAL DESCRIPTION APPLICANT: Sociedad importadora italiana ltda. Manufacturer: SHENZHEN SMART INDUSTRIAL CO., LTD FCC ID: X77HKM650 Instruction Book: Users Manual Frequency Range GSM Transmit Frequency Band: 824.2-848.8 MHz Receive Frequency Band: 849.2-893.8 MHz Transmit Frequency Band: 1850.2-1909.8 MHz Receive Frequency Band: 1930.2-1989.8 MHz Specific Operating Power Range: Power Class 1; Power Control Level 0 +30dBm +2.0dB/-2.0dB Power Control Level 1 +28dBm +3.0dB/-3.0dB Power Control Level 2 +26dBm +3.0dB/-3.0dB Power Control Level 3 +24dBm +3.0dB/-3.0dB Power Control Level 4 +22dBm +3.0dB/-3.0dB Power Control Level 5 +20dBm +3.0dB/-3.0dB Power Control Level 6 +18dBm +3.0dB/-3.0dB Power Control Level 7 +16dBm +3.0dB/-3.0dB Power Control Level 8 +14dBm +3.0dB/-3.0dB Power Control Level 9 +12dBm +4.0dB/-4.0dB Power Control Level 10 +10dBm +4.0dB/-4.0dB Power Control Level 11 +8dBm +4.0dB/-4.0dB Power Control Level 12 +6dBm +4.0dB/-4.0dB Power Control Level 13 +4dBm +4.0dB/-4.0dB Power Control Level 14 +2dBm +5.0dB/-5.0dB Power Control Level 15 +0dBm +5.0dB/-5.0dB Note; Effective radiation efficiency is –3.7dB DC Voltage and Current into the Final Amplifier Module: Supply Voltage = 3.6Vdc Supply Current = ~0.8Amp. Tune-up Procedure: Tune-up Procedure Equipment Identification: Equipment's Identification label and its intended Location are as shown in EXHIBIT Type “ID Label / Location Information” (FCC ID Nameplate), and in EXHIBIT Type “Internal Photo”(Photograph of inside) Photographs: A complete set of the Photographs showing External and Internal Views of Circuit Details and Construction are provided by from EXHIBIT Type “External Photos” and “Internal Photos”. Accessories: 2/2 Operation Description Figure 1.2: Terminal Components (Accessories) Technical Descriptions TX synthesizer uses an Offset-PLL circuit. The Offset-PLL circuit consists of PLL-IC and TX_VCO and loop filter. Reference frequency of the above synthesizers is 26MHz and generated by VCTCXO. Control signal is sent from Baseband section and keeps frequency stability. TX IQ signal is input from Baseband section to MT6225, The Bluetooth signal is input form MT6601 and FM signal is input form MT6188C section to MT6225. TX IQ signal is applied to the quadrature up-converter, and the up-converter LO signal is generated from the transceiver VCO within MT6139B. This up-converter translates the GMSK-modulated signal to an intermediate frequency (IF) that forms one input to a frequency/phase detector circuit. This IF signal is the reference input to an Offset-PLL circuit. The feedback path of this Offset-PLL circuit includes a down-conversion from the RF output frequency range to the IF range. The two inputs to this down-conversion mixer are formed the TX_VCO output and the LO generation circuits. The mixer output is the offset feedback signal that forms the variable input to a frequency/phase detector circuit. The detector compares its variable input to its reference input and generates an error signal that is low-pass filtered by the loop filter and applied to TX_VCO to force the RF frequency in the direction that minimizes errors. The TX_VCO output passes PA, Antenna SW, Coaxial connector with switch and emitted from embedded antenna. Digital Modulation: Analog speech produced by a microphone is encoded to digital PCM samples using a CODEC. The PCM samples are passed to a Vocoder for AMR (Advanced Multi Rate) encoding, to compress the speech samples. The encoding rate is determined by the Vocoder which formats the speech samples as data packets. A new data packet with data rate information is read by the microprocessor every 20 ms. The speech CODEC becomes AMR, FR(Full Rate), EFR(Enhanced FR) and HR(Half Rate). The microprocessor then sends the data packet to the transmit subsystem, and passed DAC to covert analog signal. I/Q base band signal is filtered and is inputted into RTR6250 containing quadrature phase modulator. The Data Required (EXHIBIT “Test Report”): (2.1046) RF power output (2.1047) Modulation characteristics (2.1049) Occupied bandwidth (2.1051) Spurious emission at antenna terminals (2.1053) Field strength of spurious radiation (2.1055) Frequency stability (2.1057) Frequency spectrum to be investigated Battery AC Charger Accessories

项目负责人 : BOM 版本 PCB 版本 GT007 MAIN PCB V1.0 有效日期 序号 名称 数值 位号 数量 厂商代码 厂商 1 GT007 MAIN PCB V1.0 102*39*1MM 4层 2 ferrite magneton 0402 DCR_0.4R, 75R_100MHz 300mA Z13 Z19 Z20 3 BLM15BB750SN1D MURATA 3 ferrite magneton 0402 DCR 0.3R, 75R_100MHZ 600mA Z13 Z19 Z20 3 SZ1005G750TF 顺络 4 ferrite magneton 0402 DCR_1.2R, 1K_100MHZ 250mA Z6 Z7 Z8 Z11 Z12 Z15 Z16 Z17 Z18 9 BLM15HD102SN1D MURATA 5 ferrite magneton 0402 DCR_1.25R,1K_100MHZ 250mA Z6 Z7 Z8 Z11 Z12 Z15 Z16 Z17 Z18 9 HFJ100505F102YN 奇力新电子 6 ferrite magneton 0402 DCR_1.2R, 1K_100MHZ 100mA Z6 Z7 Z8 Z11 Z12 Z15 Z16 Z17 Z18 9 GZ1005D102TF 顺络 7 ferrite magneton 0402 DCR_1.2R, 1K_100MHZ 100mA Z6 Z7 Z8 Z11 Z12 Z15 Z16 Z17 Z18 9 HZ1005U102TF 顺络 8 ferrite magneton 0603 DCR 0.8R, 1K_100MHZ 200mA Z3 1 BLM18RK102SN1 MURATA 9 ferrite magneton 0603 DCR 0.6R, 1K_100MHZ 200mA Z3 1 GZ1608U102TF 顺络 10 ferrite magneton 0603 DCR 0.25R,1K_100MHZ 800mA Z3 1 PBY160808T-102Y-N 奇力新电子 11 0402 capacitance 10pF±5% 50V COG 0402 C35 C37 C148 C149 4 GRM1555 C1H100JZ01D Murata/YAGEO/Darfon 12 0402 capacitance 18pF±5% 50V COG 0402 C146 C147 2 GRM1555C1H180JZ 01D Murata/YAGEO/Darfon 13 0402 capacitance 22pF±5% 50V COG 0402 C15 C18 C25 C39 C90 C201 C202 R32 R69 9 GRM1555C1H220JZ01D Murata/YAGEO/Darfon 14 0402 capacitance 24pF±5% 50V COG 0402 C31 1 GRM1555C1H240JZ01D Mur ata/YAGEO/Darfon 15 0402 capacitance 27pF±5% 50V COG 0402 C113 1 GRM1555C1H270JZ01D Mu rata/YAGEO/Darfon 16 0402 capacitance 33pF±5% 50V COG 0402 C4 C23 C26 C27 C309 C310 C315 C316 C324C325 C333 C334 12 GRM1555C1H330JZ01D Murata/YAGEO/Darfon 17 0402 capacitance 39pF ±5% 50V COG 0402 C24 C45 C99 3 GRM1555C1H39 0JZ01D Murata/YAGEO/Darfon 18 0402 capacitance 47pF ±5% 50V COG 0402 C8 1 GRM1555C1H470JZ01D Mur ata/YAGEO/Darfon 19 0402 capacitance 82pF±5% 50V COG 0402 C14 C46 2 GRM1555C1H820JZ01 D Murata/YAGEO/Darfon 20 0402 capacitance 100pF±5% 50V COG 0402 C95 C98 C311 C317 C326 C 335 6 GRM1555C1H101JZ01D Murata/YAGEO/Darfon 21 0402 capacitance 220pF±5% 50V COG 0402 C127 1 GRM1555C1H221JA01D M urata/YAGEO/Darfon 22 0402 capacitance 1nF±10% 50V X7R 0402 C3 C36 C93 C94 C100 C120 6 GRM155R71H102KA01D Murata/YAGEO/Darfon 23 0402 capacitance 10nF±10% 25V X7R 0402 C92 1 GRM155R71E103KA01D Mu rata/YAGEO/Darfon 24 0402 capacitance 22nF±10% 50V X7R 0402 C12 C29 2 GRM155R71H223KA0 1D Murata/YAGEO/Darfon V1.5 BOM List 25 0402 capacitance 33nF±10% 25V X7R 0402 C22 1 GRM155R71E333KA01D Mu rata/YAGEO/Darfon 26 0402 capacitance 33nF±10% 16V X7R 0402 C22 1 GRM155R71C333KA01D Mu rata/YAGEO/Darfon 27 0402 capacitance 47nF±10% 10V X7R 0402 C211 1 GRM155R71A473KA01D M urata/YAGEO/Darfon 28 0402 capacitance 100nF±10% 10V X5R 0402 C2 C5 C10 C11 C13 C47 C50 C64 C67 C68C76 C77 C78 C79 C80 C81 C82 C97 C207 C301C302 C303 C304 23 GRM155R61A104KA01D Murata/YAGEO/Darfon 29 0402 capacitance 220nF±10% 10V X5R 0402 C73 1 GRM155R61A224KA01D M urata/YAGEO/Darfon 30 0402 capacitance 1uF±10% X5R 10V 0402 C7 C9 C20 C21 C30 C32 C34 C40 C52 C62 C66C70 C105 C116 C119 C153 16 GRM155R61A105KE15D Murata/YAGEO/Darfon 31 0402 capacitance 1uF±10% X5R 6.3V 0402 C7 C9 C20 C21 C30 C32 C34 C40 C52 C62 C66C70 C105 C116 C119 C153 16 GRM155R60J105KE15D Murata/YAGEO/Darfon 32 0603 capacitance 2.2uF±20% X5R 6.3V 0603 C28 1 GRM188R60J225ME19D Murata/YAGEO/Darfon 33 0603 capacitance 4.7uF±20% X5R 6.3V 0603 C16 C19 C33 C117 4 GRM18 8R60J475ME19D Murata/YAGEO/Darfon 34 0805 capacitance 10uF±20% X5R 6.3V 0805 0.85mm C17 C54 C55 C13 2 C305 C312 C1 7 GRM219R60J106M* Murata/YAGEO/Darfon 35 tantalum capacitance 47uF 6.3V 3216 H=1.6mm C65 1 TAJA476M006RNJ A VX 36 tantalum capacitance 47uF 6.3V 3216 H=1.6mm C65 1 TEESVA0J476M8R/NRA476M06R8 NEC 37 inductance 5.1nH ±0.3nH 0402 L113 1 LQG15HS5N1S02D Murata/sunlord 38 inductance 18nH ±5% 0402 L15 1 LQG15HS18NJ02D Murata/sunlord 39 inductance 100nH±5% 0402 L1 1 LQG15HNR10J02D Murata/sunlord 40 0402 resistance 0Ω 5% 1/16W 0402 R5 R18 R19 R23 R33 R36 R42 R44 R53 R54R68 R155 R20 R21 R37 R46 16 RC0402JR-070RL YAGEO/ROHM/旺诠 41 0402 resistance 10Ω 5% 1/16W 0402 R10 R12 R17 3 RC0402JR-0710RL YA GEO/ROHM/旺诠 42 0402 resistance 33Ω 5% 1/16W 0402 R2 1 RC0402JR-0733RL YAGEO/ROHM/ 旺诠 43 0402 resistance 51Ω 5% 1/16W 0402 R75 1 RC0402JR-0751RL YAGEO/ROHM /旺诠 44 0402 resistance 82Ω 5% 1/16W 0402 R48 R55 2 RC0402JR-0782RL YAGEO/ ROHM/旺诠 45 0402 resistance 100Ω 5% 1/16W 0402 R49 R50 R51 3 RC0402JR-07100RL YAGEO/ROHM/旺诠 46 0402 resistance 200Ω 5% 1/16W 0402 R308 R309 2 RC0402JR-07200RL YA GEO/ROHM/旺诠 47 0402 resistance 1K 5% 1/16W 0402 R3 R9 R27 R28 R29 R301 R302 R3 06 R307 9 RC0402JR-071KL YAGEO/ROHM/旺诠 48 0402 resistance 1.5K 5% 1/16W 0402 R303 R305 R304 3 RC0402JR-071K 5L YAGEO/ROHM/旺诠 49 0402 resistance 2.2K 5% 1/16W 0402 R4 R6 R24 R71 4 RC0402JR-072K2 L YAGEO/ROHM/旺诠 50 0402 resistance 3.9K 5% 1/16W 0402 R52 1 RC0402JR-073K9L YAGEO/ROH M/旺诠 51 0402 resistance 4.7K 5% 1/16W 0402 R200 R34 R38 3 RC0402JR-074K7L YAGEO/ROHM/旺诠 52 0402 resistance 6.8K 1% 1/16W 0402 R100 1 RC0402FR-076K8 YAGEO/ROH M/旺诠 53 0402 resistance 10K 5% 1/16W 0402 R25 1 RC0402JR-0710KL YAGEO/ROHM /旺诠 54 0402 resistance 20K 5% 1/16W 0402 R30 1 RC0402JR-0720KL YAGEO/ROHM /旺诠 55 0402 resistance 24K 5% 1/16W 0402 R26 1 RC0402JR-0724KL YAGEO/ROHM /旺诠 56 0402 resistance 47K 5% 1/16W 0402 R13 R39 R45 3 RC0402JR-0747KL YA GEO/ROHM/旺诠 57 0402 resistance 100K 5% 1/16W 0402 R7 R8 R16 R22 R31 R300 6 RC040 2JR-07100KL YAGEO/ROHM/旺诠 58 0603 resistance 10Ω 5% 1/10W 0603 R81 1 RC0603JR-0710RL YAGEO/ROHM /旺诠 59 0805 resistance 0.2Ω 1% 1/8W 0805 R47 1 RL0805FR-7W0R2L YAGEO/ROHM /旺诠 60 32KHZ, crystal 6.9x1.4x1.3mm X100 1 Q13MC1461000200/MC-146 32.768KHZ 12.5+-20.0 EPSON 61 32KHZ, crystal 6.9x1.4x1.3mm X100 1 SSP-T7-F Seiko 62 32KHZ, crystal 6.9x1.4x1.3mm 1.65MM X100 1 SM-14J 32.768KHZ 12. 5 KDS 63 32KHZ, crystal 6.9x1.4x1.3mm X100 1 MS2V-T1S MICRO CRYSTAL 64 26MHZ，crystal 3.2*2.5*0.7mm U4 1 7M26000018 TXC 65 26MHZ，crystal 3.2*2.5*0.7mm U4 1 TZ1387A TAISAW 66 26MHZ，crystal 3.2*2.5*0.7mm U4 1 EXS00A-CS01422 NDK 67 26MHZ，crystal 3.2*2.5*0.7mm U4 1 X1E000021031400 EPSON 68 充电MOSFET 2*2*0.8mm 8pin D100 1 M…

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Tune Up Description a. Frequency Range GSM 850 TX 824-849 MHz RX 869-894 MHz GSM 900 TX 880-915 MHz RX 925-960MHz DCS 1800 TX 1710-1785MHz RX1805-1880MHz PCS 1900 TX 1850-1910MHz RX 1930-1990MHz b. Channel Space:200KHz C. Total Channel Number: Carriers*8(TDMA) d. Modulation:GMSK e. Frequency Tolerance:≤+/- 0.1ppm 1) Frequency Distribution GSM 850 EGSM900 DCS1800 PCS1900 Transmit (TX): 824-849MHZ 880-915MHZ 1710-1785MHZ 1850-1910MHZ Receive( RX): 869-894MHZ 925-960MHZ 1805-1880MHZ 1930-1990MHZ 2) Absolute channel Number:128-251 1-124 512-885 512-810 3) TX RX Space: 45MHZ 45MHZ 95MHZ 80MHZ 4) TX/RX time solt Differential: 3 3 3 3 5) Modulation bit rate: 270.833kbit 270.833kbit 270.833kbit 270.833kbit 6) Frame Cycle: 4.615ms 4.615ms 4.615ms 4.615ms 7) Slot Cycle: 576.9us 576.9us 576.9us 576.9us 8) Bit Cycle time: 3.692us 3.692us 3.692us 3.692us 9) Channel Space: 200KHZ 200KHZ 200KHZ 200KHZ 10. Time slot /Frame: 8 8 8 8 11. Modulation Type: GMSK GMSK GMSK GMSK 12 Max TX Power: 2W (33dbm) 2W (33dbm) 2W (33dbm) 2W (33dbm) 13. Min TX Power: 3.3mW 3.3mW 1mW 1mW 14 RF Impedance: 50Ω 50Ω 50Ω 50Ω 15. Synthesizer Frequency: T X : 3296-3396MHZ 3520-3660MHZ 3420-3570MHZ 3700-3820MHZ R X 3476-3576MHZ 3700-3840MHZ 3610-3760MHZ 3860-3980MHZ 18.Crystal Frequency: 26MHZ 19.Operating Voltage: Max:4.2V Normal:3.8V Min:3.6V 20. Demodulation Type: I/Q 21.Max Frequency Tolerance:<±0.1PPM 22. Max Phase Error: Peak Value <20 degree RMS<5 degree 23.. RX bit error rate:（-102dbm: 2.44% 24. Conduct Spurious: 9Khz-1GHZ ≤-36dbm 1GHZ-12.75GHZ ≤-30dbm 25.Class3 Bluetooth Frequency 2.4-2.5Ghz Max TX Power 1mw Min TX Power 0.82mw

Reference No: KS100819B11-SF Report No: KS100819B11-SF Page 1 of 38 Rev. 00 ANSI/IEEE Std. C95.1-1992 In accordance with the requirements of FCC Report and Order: ET Docket 93-62, and OET Bulletin 65 Supplement C FCC SAR TEST REPORT For Mobile Phone Model No.: HKM650 Trade Name: HKM FCCID:X77HKM650 Test Report Number: KS100819B11-SF Issued for Sociedad importadora italiana ltd. Av Nueva Costanera 3848 , depto 24 , Vitacura, Santiago - Chile Issue by Compliance Certification Services Inc. Kun shan Laboratory No.10 Weiye Rd., Innovation park, Eco&Tec, Development Zone, Kunshan City, Jiangsu, China TEL: 86-512-57355888 FAX: 86-512-57370818 Issued Date: August 20, 2010 Note: This report shall not be reproduced except in full, without the written approval of Compliance Certification Services Inc. This document may be altered or revised by Compliance Certification Services Inc. personnel only, and shall be noted in the revision section of the document. The client should not use it to claim product endorsement by TAF, A2LA,NIST or any government agencies. The test results in the report only apply to the tested sample. Reference No: KS100819B11-SF Report No: KS100819B11-SF Page 2 of 38 Rev. 00 This report shall not be reproduced except in full, without the written approval of Compliance Certification Services. Revision History Rev. Issue Date Revisions Effect Page Revised By 00 August 20, 2010 Initial Issue ALL Miro Chueh Reference No: KS100819B11-SF Report No: KS100819B11-SF Page 3 of 38 Rev. 00 This report shall not be reproduced except in full, without the written approval of Compliance Certification Services. TABLE OF CONTENTS 1. CERTIFICATE OF COMPLIANCE (SAR EVALUATION) .........................................................4 2. EUT DESCRIPTION ..........................................................................................................................5 3. REQUIREMENTS FOR COMPLIANCE TESTING DEFINED BY THE FCC ..........................6 4. TEST METHODOLOGY...................................................................................................................6 5. Test Configuration ..............................................................................................................................6 6. DOSIMETRIC ASSESSMENT SETUP ............................................................................................6 6.1 MEASUREMENT SYSTEM DIAGRAM ........................................................................................................ 8 6.2 SYSTEM COMPONENTS ............................................................................................................................9 7. EVALUATION PROCEDURES......................................................................................................11 8. MEASUREMENT UNCERTAINTY ..............................................................................................15 9. EXPOSURE LIMIT ..........................................................................................................................16 10. EUT ARRANGEMENT................................................................................................................17 10.1 ANTHROPOMORPHIC HEAD PHANTOM.................................................................................................17 10.2 DEFINITION OF THE “CHEEK/TOUCH” POSITION..................................................................................18 10.3 DEFINITION OF THE “TILTED” POSITION ............................................................................................... 19 11. MEASUREMENT RESULTS ......................................................................................................20 11.1 TEST LIQUIDS CONFIRMATION...............................................................................................................20 11.2 SYSTEM PERFORMANCE CHECK...........................................................................................................21 11.3 EUT TUNE-UP PROCEDURES AND TEST MODE ...................................................................................23 11.4 RF POWER OUTPUT.................................................................................................................................24 11.5 EUT SETUP PHOTOS ...............................................................................................................................25 11.6 SAR MEASUREMENT RESULTS ..............................................................................................................27 EUT PHOTO .............................................................................................................................................31 12. EQUIPMENT LIST & CALIBRATION STATUS.....................................................................36 13. FACILITIES ..................................................................................................................................37 14. REFERENCES ..............................................................................................................................37 15. ATTACHMENTS..........................................................................................................................38 Reference No: KS100819B11-SF Report No: KS100819B11-SF Page 4 of 38 Rev. 00 This report shall not be reproduced except in full, without the written approval of Compliance Certification Services. 1. CERTIFICATE OF COMPLIANCE (SAR EVALUATION) Product name: Mobile Phone Model No.: HKM650 Trade name: HKM Description: N/A Device Category: PORTABLE DEVICES Exposure Category: GENERAL POPULATION/UNCONTROLLED EXPOSURE Date of Test: August 20, 2010 Applicant: Sociedad importadora italiana ltda. Av Nueva Costanera 3848 , depto 24 , Vitacura, Santiago - Chile Manufacturer: SHENZHEN SMART INDUSTRIAL CO., LTD Room7A12, 7th Floor, Jingze Building, Shennan East Road, Luohu District, Shenzhen, China Applicatio…

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Project name: KS100819B11 Page 1 SAR Test Plots Project name : KS100819B11 EUT DESCRIPTION Product name: Mobile Phone Model No.: HKM650 Trade name: HKM Tested date: August 20, 2010 Applicant: Sociedad importadora italiana ltda. Av Nueva Costanera 3848 , depto 24 , Vitacura, Santiago - Chile Compliance Certification Services (Kunshan) Inc. No.10, Weiye Rd., Innovation Park, Eco & Tec. Development Part, Kunshan City, Jiangsu Province, PRC. TEL: 86-512-57355888 FAX: 86-512-57370818 http://www.ccsrf.com Project name: KS100819B11 Page 2 GSM850 I. RESULTS TYPE BAND PAR AM E TE RS Noise -- -- Validation -- -- Phone GSM850 Measurement 1: Right Head with Cheek device position on Low Channel in GSM mode Measurement 2: Right Head with Cheek device position on Middle Channel in GSM mode Measurement 3: Right Head with Cheek device position on High Channel in GSM mode Measurement 4: Right Head with Tilt device position on Low Channel in GSM mode Measurement 5: Right Head with Tilt device position on Middle Channel in GSM mode Measurement 6: Right Head with Tilt device position on High Channel in GSM mode Measurement 7: Left Head with Cheek device position on Low Channel in GSM mode Measurement 8: Left Head with Cheek device position on Middle Channel in GSM mode Measurement 9: Left Head with Cheek device position on High Channel in GSM mode Measurement 10: Left Head with Tilt device position on Low Channel in GSM mode Measurement 11: Left Head with Tilt device position on Middle Channel in GSM mode Measurement 12: Left Head with Tilt device position on High Channel in GSM mode Measurement 13: Validation Plane with Body device position on Low Channel in GSMmode Measurement 14: Validation Plane with Body device position on Middle Channel in GSM mode Measurement 15: Validation Plane with Body device position on High Channel in GSM mode Project name: KS100819B11 Page 3 MEASUREMENT 1 Type: Phone measurement (Complete) Date of measurement: 08/20/2010 Measurement duration: 19 minutes 56 seconds Mobile Phone IMEI number: -- Air Temperature: 21 °C Liqued Temperature: 20 °C Crest Factor: GSM Duty cycle: 1:8 Medium parameters used: f=824.2MHz; σ=41.49mho/m; εr=0.92; ρ =1000kg/m3 Area Scan: 7 x 7 x 1 dx=15mm dy=15mm Zoom Scan: 5 x 5 x 7 dx=5mm dy=5mm dz=5mm Z Axis Scan: 1 x 1 x 21 dx=20mm dy=20mm dz=5mm A. Experimental conditions. Phantom File zinf15.txt, Adaptative 2 max Phantom Right head Device Position Cheek Band GSM850 Channels Low Signal GSM Project name: KS100819B11 Page 4 B. Instrumentations. PC HP (Pentium(R) V3.06GHz, SN:375052-AA1) Calibrated: N/A Network Emulator R&S (CMU200, SN:B23-03291) Calibrated: 06/17/2010 Vo l t m e t e r Keithley (2000, SN:1015843) Calibrated: 05/01/2010 Synthetizer Agilent (E8257C, SN:MY43321570) Calibrated: 08/07/2010 Amplifier Mini-Circuits (ZHL-42, SN:110405) Calibrated: 07/29/2010 Power Meter Agilent (E4416A, SN:QB41292714) Calibrated: 07/29/2010 Probe Antennessa (SN:SN_1109_EP_100) Calibrated: 04/16/2010 Phantom Antennessa (SN:SN41_05_SAM29) Calibrated: N/A Liquid Antennessa Calibrated: N/A Measurement SW: OPEN SAR V2.1 Calibrated: N/A Project name: KS100819B11 Page 5 C. SAR Measurement Results Frequency (MHz) 824.200001 Relative permitivity (real part) 41.487542 Relative permitivity (imaginary part) 19.510000 Conductivity (S/m) 0.922200 Variation (%) -1.450000 SURFACE SAR VOLUME SAR Project name: KS100819B11 Page 6 Maximum location: X=-13.00, Y=-3.00 SAR 10g (W/Kg) 0.104353 SAR 1g (W/Kg) 0.223541 Project name: KS100819B11 Page 7 Z Axis Scan Project name: KS100819B11 Page 8 MEASUREMENT 2 Type: Phone measurement (Complete) Date of measurement: 08/20/2010 Measurement duration: 19 minutes 56 seconds Mobile Phone IMEI number: -- Air Temperature: 21 °C Liqued Temperature: 20 °C Crest Factor: GSM Duty cycle: 1:8 Medium parameters used: f=836.6MHz; σ=41.45mho/m; εr=0.92; ρ =1000kg/m 3 Area Scan: 7 x 7 x 1 dx=15mm dy=15mm Zoom Scan: 5 x 5 x 7 dx=5mm dy=5mm dz=5mm Z Axis Scan: 1 x 1 x 21 dx=20mm dy=20mm dz=5mm A. Experimental conditions. Phantom File zinf15.txt, Adaptative 2 max Phantom Right head Device Position Cheek Band GSM850 Channels Middle Signal GSM Project name: KS100819B11 Page 9 B. Instrumentations. PC HP (Pentium(R) V3.06GHz, SN:375052-AA1) Calibrated: N/A Network Emulator R&S (CMU200, SN:B23-03291) Calibrated: 06/17/2010 Vo l t m e t e r Keithley (2000, SN:1015843) Calibrated: 05/01/2010 Synthetizer Agilent (E8257C, SN:MY43321570) Calibrated: 08/07/2010 Amplifier Mini-Circuits (ZHL-42, SN:110405) Calibrated: 07/29/2010 Power Meter Agilent (E4416A, SN:QB41292714) Calibrated: 07/29/2010 Probe Antennessa (SN:SN_1109_EP_100) Calibrated: 04/16/2010 Phantom Antennessa (SN:SN41_05_SAM29) Calibrated: N/A Liquid Antennessa Calibrated: N/A Measurement SW: OPEN SAR V2.1 Calibrated: N/A Project name: KS100819B11 Page 10 C. SAR Measurement Results Frequency (MHz) 836.590001 Relative permitivity (real part) 41.450210 Relative permitivity (imaginary part) 19.523201 Conductivity (S/m) 0.916234 Variation (%) -0.200000 SURFACE SAR VOLUME SAR Project name: KS100819B11 Page 11 Maximum location: X=-13.00, Y=-3.00 SAR 10g (W/Kg) 0.112377 SAR 1g (W/Kg) 0.242513 Project name: KS100819B11 Page 12 Z Axis Scan Project name: KS100819B11 Page 13 MEASUREMENT 3 Type: Phone measurement (Complete) Date of measurement: 08/20/2010 Measurement duration: 19 minutes 56 seconds Mobile Phone IMEI number: -- Air Temperature: 21 °C Liqued Temperature: 20 °C Crest Factor: GSM Duty cycle: 1:8 Medium parameters used: f=848.8MHz; σ=41.39mho/m; εr=0.92; ρ =1000kg/m 3 Area Scan: 7 x 7 x 1 dx=15mm dy=15mm Zoom Scan: 5 x 5 x 7 dx=5mm dy=5mm dz=5mm Z Axis Scan: 1 x 1 x 21 dx=20mm dy=20mm dz=5mm A. Experimental conditions. Phantom File zinf15.txt, Adaptative 2 max Phantom Right head Device Position Chee…

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