YH2-MD110GSM MOBILE PHONE

User’s Manual For MD110 -1- 1 Basic knowledge 1.1 Brief introduction Please read the user manual carefully to keep your mobile phone in the optimal condition during use. Based on the principle of sustainable development, our company reserves the right to improve the product without notice as well as the final interpretation right to the performance description. The content in the user manual may be a little bit different from actual one displayed in the mobile phone as the its software and service provider differ. The actual one displayed in the mobile phone should be taken as final one. 1.2 Important safety notices Please inform the telephone company immediately to deactivate SIM card (the function needs network support) if your mobile phone is lost or stolen to protect you from suffering economic loss as others make a phone call with your mobile phone. To protect your mobile phone from being used by others, please take precautionary measures, such as: ·Set up PIN code of SIM card; ·Set up mobile phone password. 1.3 Safety warning and notices Safety warning ¾ Traffic safety first -2- Do not use your mobile phone while driving. Please use a hand-free device when it is necessary to talk over a mobile phone. Bear in mind that it is illegal to talk over a mobile phone while driving in some countries. ¾ Turn the mobile phone off in the airplane Your mobile phone would cause interference. It is illegal and dangerous to use your mobile phone in the airplane. Be sure to keep your mobile phone off during flight. ¾ Turn your mobile phone off in a dangerous area Strictly follow related laws and regulations. Turn your mobile phone off in a gas-filling station, oil field, and chemicals factory, or close to a place where an explosion activity is going to happen. ¾ Follow special regulations Follow special regulations. Turn your mobile phone off where using the mobile phone is prohibited, or when interference or danger may occur (for example, in a hospital. you should be very careful when use your mobile phone in a place close to heart pacemaker, hearing aid, and other medical electronic device as the mobile phone is likely to interfere the device. ¾ Interference Communication quality of any mobile phone may be affected by radio wave interference. This mobile phone is furnished with a built-in antenna. When the mobile phone is in power-off state, do not touch the antenna area if unnecessary (antenna of C network and G network is mounted in the top and bottom of the mobile phone respectively) to avoid affecting communication quality. ¾ Specialized service -3- Only professional service persons can mount and repair the mobile phone. To mount or repair it on your own is likely to bring a very big risk and violate warranty provisions. ¾ Accessory and battery Only use accessory and battery recognized by the manufacturer. ¾ Reasonable use Use your mobile phone in a normal way. ¾ Emergency call Make sure the mobile phone is turned on and in service state. Input an emergency call number, for example, 112 or other. Press the dial key to dial. Give your position and briefly describe when happened briefly. Do not end the communication without permission. Attention: like any other mobile phone, not all features of this mobile phone are available due to network coverage or radio signal transmission. Some networks even do not support 112 emergency call service. Therefore, you should not completely rely on the mobile phone for some critical communications (such as medical first aid). Please consult with your local network provider for it. Notices Your mobile phone is manufactured with excellent design and consummate technology. You should take good care of it. The following suggestions will help your mobile phone safely go through warranty period and be used many more years. ¾ Keep the mobile phone and its all accessories beyond children’s reach. ¾ Keep the mobile phone dry. Keep it away from rain, humidity, and liquid that might contain substances corrosive to the -4- electronic circuit. ¾ Do not use or store the mobile phone in a dusty place to avoid damaging the mobile parts. ¾ Do not store the mobile phone in a place with high temperature. High temperature would shorten electronic circuit lifespan and damage battery and some plastic parts. ¾ Do not store the mobile phone in a cold place. Otherwise, moisture will form in the mobile phone when temperature of the mobile phone rises to room temperature, which will damage electronic circuit board. ¾ Do not throw, knock, or shake the mobile phone. Rudely handle the mobile phone would damage its internal electronic circuit board and precision structure. 2 Your mobile phone 2.1 Key description Following keys are available in the mobile phone: ‹ Dial key G1 Press the key to send out a call on SIM card 1 by entering the called number or selecting a contact from the phonebook, or press the key to receive an incoming call. Press the key in standby state to display recent call history. Press it twice consecutively to dial a latest phone number. ‹ Dial key G2 Press the key to send out a call on SIM card 2 by entering the called number or selecting a contact from the phonebook, or press the key to receive an incoming call. Press the key in standby state to display recent call history. Press it twice -5- consecutively to dial a latest phone number. ‹ Hangup key In call state, use it to end the call. In talk state, use it to end talk or exit the menu and return to standby state. Press and hold the key approx. 2-3 seconds to turn the mobile phone on/off. ‹ Arrow keys Use them to scroll items when browse functions list. In edit state, use them to move the cursor. In standby state, press the keys to enter a specified function. You can define the keys according to your own needs to enter the corresponding function. During calling, press the up and down direction key to adjust the volume. ‹ OK key In standby interface, press the key to enter the main menu. ‹ Left and Right soft key Th…

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CPU MT6223D Audio Keypad Bluetooc h FM Memory Power Manager Battery SIM Card Slot System Connector 32.768K AD6548 RF7163 Antenna 26M DSP SP5369 LCD Camera T- F l a s h

External Photos

FCC ID Lable Location

FCC ID Label

Internal Photos

MD110 Circuit Description Version:V1.0 MD110 Block diagram 1.1 CPU MT6223D Audio Keypad Bluetooc h FM Memory Power Manager Battery SIM Card Slot System Connector 32.768K AD6548 RF7163 Antenna 26M DSP SP5369 LCD Camera T- F l a s h RF Part: ANTENNA GSM RF and BB interface diagram 2.2 RF TRANSMIT PART ANT VBAT Transceive SCLK SDATA LE R/TX Switch HB_TX LB_TX PCS-PCTRL TX_EN DCS_BAND_SW GSM_BAND_SW RFVCO_EN Band select VA P C PA VAFC VCXOEN 26MHz VCXO BSI_CLK BSI_DATA BSL_CSO BSI BPI_BUS0 BPI_BUS1 BPI_BUS2 BPI_BUS4 BPI_BUS5 BPI_BUS6 BPI_BUS7 BPI APCDAC APC AFC VCXOEN AFC Baseband Clock LB_TX CTRL I/Q HB_TX VA P C BAND SEL PA E N RF7163 FEM MT6223D AD6548 TRANSCEIVER This circuit shows the transmitter path,including the RF7163 and AD6548. The RF7163 is a quad-band(GSM850/EGSM900/DCS1800/PCS1900)GSM/GPRS,Class12 compliant transmit moudle,and is designed for use as the final portion of the transmitter section in a GSM850/EGSM900/DCS1800/PCS1900 handset and eliminates the need for a PA-to-antenna switch moudle matching netwroks. The AD6548 is a fully integrated GSM Transceiver , to support quad-band application without further external active components. The modulated IQ singal from baseband is turned to the RF signal by the AD6548,then the RF signal is amplified by the RF7163 and transmitted to antenna through antenna switch and finally radiated to the air. The PA_EN signal controls the RF7163 on or off. The BANDSW signal controls the RF7163 to select Low band or High band.The VAPC signal is ramping the RF signal.And all control signals are from baseband. 2.3 RF RECEIVE PART This circuit shows the receiver path,including the RF7163,AD6548 and four SAW Filter.The RF7163 is a quad-band transmit module with TX/RX switching,having four interchangeable RX ports allowing quad-band operation.And when the PA_EN signal is0,the RF7163 is in RX mode.The AD6548 includes four fully intergrated Low Noise Amplifier(LNAS),to suppert Quad-Band application.When receiving,the RF signal from antenna,through the RF7163 and SAW Filter,enters the AD6548,ang then amplified and downconverted by quad-rature mixer and then fed to the baseband.Then the RF signal is demodulated to the IQ signals.Finally the IQ signals are transmitted to the baseband analog processor by the out pins. PA _ E N BAND SEL CTRL RF7163 FEM G850 RX SAW G900 RX SAW G1800 RX SAW G1900 RX SAW AD6548 TRANSCEIVER MT6223D I/O ANT

No. Name Model Unit quantity Position manufacturer 1 11102236 MTK Baseband chips MT6223DA/A**L PCS 1 U200 MTK 2 11116540 RF transceiver chip (4 Frequency) AD6548BCPZ* PCS 1 U100 AD I 4 11172300 NOR+PSRAM(128Mb+32Mb) K5L2731CAM PCS 1 U6 SAMSUNG 5 11520021 RF power amplifier (4 Frequency) RF7163 PCS 1 U101 RFMD ( 类 ) 11520410 Audio power amplifier(2.5W,D类) TPA2010D1YEFR TI 11520411 Audio power amplifier(2.5W,D类) TPA2010D1YZFR TI 11520412 Audio power amplifier(2.5W,D类) LY8010 LYONTEK 7 11127221 Multimedia processing SP5369 PCS 1 U402 superpix 8 11420580 BT Chips MT6601T PCS 1 U800 MTK 11500210 LDO(1.8V,2.8V,Dual 150mA) XC6401EE20MR TOREX 11500213 LDO(1.8V,2.8V,Dual 150mA) EUP7201-1.8/2.8VIR1 EUTECH 6 PCS 1 D501 11500214 LDO(1.8V,2.8V,Dual 150mA) AS2815M6D-02/TR-LF A1SEMI 11500218 LDO(1.8V,2.8V,Dual 150mA) LN6401FF1828MR 南麟 11500219 LDO(1.8V,2.8V,Dual 150mA) PAM3102-AST26R1 PAM 11500151 LDO(2.8V,300mA) RT9193-28PB RICHTEK 11500153 LDO(2.8V,300mA) EUP7967A-28VIR1//AAP2967-28VIR1 EUTECH 11500155 LDO(2.8V,300mA) RP1202A-28PB//RP1202- 28PB//RP1202 - 28GB RICHPOWER U2 10 PCS 1 9 PCS 1 U701 28PB//RP1202 - 28GB 11500040 LDO(3.3V,300mA) RT9193-33PB RICHTEK 11500042 LDO(3.3V,300mA) EUP7967A-33VIR1//AAP2967-33VIR1 EUTECH 11500043 LDO(3.3V,150mA) AS2915M5-3.3/TR-LF A1SEMI 11500044 LDO(3.3V,300mA) RP1202A-33PB//RP1202-33PB//RP1202-33GB RICHPOWER 11500048 LDO(3.3V,300mA) LN1134B332MR 南麟 PCS 1 U401 11 11123020 MTK Dual SIM Controller MT6302N MTK 11123022 Dual SIM Controller AW6302QNR AWINIC 11123023 Dual SIM Controller BCT4302B BROADCHIP 13 11900562 FM Chip RDA5802E PCS 1 U803 RDA 14110022 Schottky diode(200mA) MA2SD320GL PANASONIC 14110023 Schottky diode(200mA) 1PS79SB30 PHILIPS 14110024 Schottky diode (200mA) SDM20U40-7 DIODES PCS 1 1412 D509,D560,D812 PCS 3 U801 14110026 Schottky diode (200mA) RB520S-30TE61 ROHM 14110029 Schottky diode (200mA) RB520S-30 长电 14300101 Transistor(NPN,100mA,50V) PDTC123JE PHILIPS 14300102 Transistor(NPN,100mA,50V) DTC123JE* ROHM 14300109 Transistor(NPN,100mA,50V) DTC123JE 长电 28150040 Diode(1608) ESD5Z7.0T1* ON 28150046 Diode(1608) PESD5Z7.0 PHILIPS 16 PCS 1 15 PCS 2 VT603,VT604 C300 28150046 Diode(1608) PESD5Z7.0 PHILIPS 28150047 Diode(1608) ESD5Z7V-2/TR WILLSEMI 28150048 Diode(1608) SES7VD523-2U Semitel 14400040 MOSFET(P) FDFMA2P853 FAIRCHILD 14400041 MOSFET(P) SIA811DJ-T1-E3 VISHAY 14400042 MOSFET(P) NTLJF3117PT1G ON 14400043 MOSFET(P) MC3117 MegaPower(瑞信) D500 PCS 16 PCS 1 17 1 C300 14400044 MOSFET(P) DMS2220LFDB-7 DIODES 22110011 32.768KHz Crystal MS3V-T1R 32.768kHz 12.5pF+/-20ppm Micro Crystal 22110013 32.768KHz Crystal MS3V-T1R-FM32.768kHz12.5pF+/-20ppm Micro Crystal 22110014 32.768KHz Crystal Q13MC1461000200 / MC-14632.768KHZ 12.5+-20.0 EPSON PCS 18 1 G201 第 1 页，共 5 页 22110016 32.768KHz Crystal SSP-T7(32.768KHz)-12.5pF+/-20ppm SEIKO 22110250 26MHz Crystal(3225) 7M26000018 TXC 22110253 26MHz Crystal(3225) E3SB26.0000FBES11MAM 26M 3225 HOSONIC 22110259 26MHz Crystal(3225) TZ1387A Taisaw 22110480 32MHz Crystal(3225) 7M32000035 TXC () () PCS 1 X100 19 22110481 32MHz Crystal(3225) 1C(B)332000AA0B DSX321G KDS 22110482 32MHz Crystal(3225) TZ0375A TST 22110483 32MHz Crystal(3225) E3SB32.0000F12S11M HOSONIC(鸿星国际) 22110484 32MHz Crystal(3225) CX3225SB32000FOFLJZZ KYOCERA 22110485 32MHz Crystal(3225) CXC3X320000GHVRP50 PARTRON 22110486 32MHz Crystal(3225) EXS00A-CS00189 NDK 20 1 PCS U802 27150200 SAW FILTER(GSM850-RX) B39881-B9400-K610 EPCOS 27150201 SAW FILTER(GSM850-RX) SAFEA881MFL0FOOR14 MURATA 27150208 SAW FILTER(GSM850-RX) SFH881PQ102 SAMSUNG 27150252 SAW FILTER(PCS-RX) B39202-B9403-K610 EPCOS 27150253 SAW FILTER(PCS-RX) SAFEA1G96FA0F00R12 MURATA 27150257 SAW FILTER(PCS-RX) EFCH1960TDA1 PANASONIC 27150258 SAW FILTER(PCS-RX) SFHG60MQ102 SAMSUNG 27150420 SAW FILTER(EGSM/DCS) FAR G6KG 1G8425 Y4SA FUJITSU PCS 1 2122 PCS 1 U105U108 27150420 SAW FILTER(EGSM/DCS) FAR - G6KG - 1G8425 - Y4SA FUJITSU 27150421 SAW FILTER(EGSM/DCS) SAWEN942MCN0F00 MURATA 27110030 Bandpass filter(2.45GHz) LFB182G45SG9A293 MURATA 27110031 Bandpass filter(2.45GHz) BF1608-L2R4DAAT/LF ACX 27110032 Bandpass filter(2.45GHz) HMD950T-T SOSHIN 27110033 Bandpass filter(2.45GHz) LTB-1608-2G4H6-A1-RP MAG.LAYERS 27110034 Bandpass filter(2.45GHz) RFBPF1608070A0T WALSIN(华新科) PCS 1 U810 PCS 1 U102 2423 27110035 Bandpass filter(2.45GHz) TBF1608245R2 CYNTEC 25 32100000 0402 SMD Resistor(0Ω,5%,1/16W) MCR01MZPJ000 // RC0402JR-070R// RM04JTN0 PCS 23 C816,L102,L122,L150,R324,R330,R408,R420,R422,R845,R554,R555,R206,R532,R533,R550,R551,R602,R803,R610,R445,R308,C850 ROHM/YAGEO/TAI 26 32100330 0402 SMD R i t (33Ω 5% 1/16W) MCR01MZP J 330 // RC0402 J R- PCS 8 R607 , R608 , R306 , R307 , R305 , R662 , R ROHM/YAGEO 26 32100330 0402 SMD Resistor ( 33Ω,5%,1/16W ) MCR01MZPJ330 // RC0402JR 0733R PCS 8 R607 , R608 , R306 , R307 , R305 , R662 , R 663,L121 ROHM/YAGEO 27 32100390 0402 SMD Resistor(39Ω,5%,1/16W) MCR01MZPJ390 // RC0402JR-0739R PCS 1 R603 ROHM/YAGEO 28 32100510 0402 SMD Resistor(51Ω,5%,1/16W) MCR01MZPJ510 // RC0402JR-0751R PCS 1 R109 ROHM/YAGEO 29 32100820 0402 SMD Resistor(82Ω,5%,1/16W) MCR01MZPJ820 // RC0402JR-0782R PCS 1 L120 ROHM/YAGEO MCR01MZPJ151 // RC0402JR - 30 32101150 0402SMD Resistor(150Ω,5%,1/16W) MCR01MZPJ151 // RC0402JR - 07150R // RM04JTN151 PCS 3 R1,R2,R3 ROHM/YAGEO/TAI 31 32101390 0402 SMD Resistor(390Ω,5%,1/16W) MCR01MZPJ391 // RC0402JR-07390R // RM04JTN391 PCS 2 R508,R509 ROHM/YAGEO/TAI 32 32102100 0402 SMD Resistor(1kΩ,5%,1/16W) MCR01MZPJ102 // RC0402JR-071K// RM04JTN102 PCS 19 R102,R250,R251,R252,R253,R254,R255,R256,R257,R258,R259,R260,R501,R502,R505,R507,R605,R606,R442 ROHM/YAGEO/TAI MCR01MZPJ152 // RC0402JR 33 32102150 0402 SMD Resistor(1.5kΩ,5%,1/16W) MCR01MZPJ152 // RC0402JR- 071K5 // RM04JTN152 PCS 4 R503,R504,R506,R609 ROHM/YAGEO/TAI 34 32102220 0402 SMD Resistor(2.2kΩ,5%,1/16W) MCR01MZPJ222 // RC0402JR-072K2 PCS 4 R121,R122,R123,R124 ROHM/YAGEO 35 32102390 0402 SMD Resistor(3.9kΩ,5%,1/16W) MCR01MZPJ392 // RC0402JR-073K9 // RM04JTN392 PCS 1 R215 ROHM/YAGEO/TAI 36 32102470 0402 SMD Resistor(4.7kΩ,5%…

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Operational Description Transmit Frequency GSM：824.2 ～848.8 MHz PCS：1850.2‐1909.8 MHz Modulation GMSK（BT=0.3） Hardware Version G308B_MB_V1.0 Software Version G308_1.4_M511B Emission Designator 200Khz Freq.stability +‐1ppm DATA Transmission N/A Voltage DC 3.5‐4.2V Current Idel:<5mA Traffic<=1.5A Transmitter Power EGSM:2W DCS:1W RF Antenna GSM850/1900 Cystal F0 26MHz+‐30ppm Specific operating power range: Power Classs 1 GSM Power control level 5 +33dbm+2dbm/‐2dbm Power control level 6 +31dbm+3dbm/‐3dbm Power control level 7 +29dbm+3dbm/‐3dbm Power control level 8 +27dbm+3dbm/‐3dbm Power control level 9 +25dbm+3dbm/‐3dbm Power control level 10 +23dbm+3dbm/‐3dbm Power control level 11 +21dbm+3dbm/‐3dbm Power control level 12 +19dbm+3dbm/‐3dbm Power control level 13 +17dbm+3dbm/‐3dbm Power control level 14 +15dbm+3dbm/‐3dbm Power control level 15 +13dbm+3dbm/‐3dbm Power control level 16 +11dbm+5dbm/‐5dbm Power control level 17 +9dbm+5dbm/‐5dbm Power control level 18 +7dbm+5dbm/‐5dbm Power control level 19 +5dbm+5dbm/‐5dbm PCS Power control level 0 +30dbm+2dbm/‐2dbm Power control level 1 +28dbm+3dbm/‐3dbm Power control level 2 +26dbm+3dbm/‐3dbm Power control level 3 +24dbm+3dbm/‐3dbm Power control level 4 +22dbm+3dbm/‐3dbm Power control level 5 +20dbm+3dbm/‐3dbm Power control level 6 +18dbm+3dbm/‐3dbm Power control level 7 +16dbm+3dbm/‐3dbm Power control level 8 +14dbm+3dbm/‐3dbm Power control level 9 +12dbm+4dbm/‐4dbm Power control level 10 +10dbm+4dbm/‐4dbm Power control level 11 +8dbm+4dbm/‐4dbm Power control level 12 +6dbm+4dbm/‐4dbm Power control level 13 +4dbm+4dbm/‐4dbm Power control level 14 +2dbm+4dbm/‐4dbm Power control level 15 0dbm+4dbm/‐4dbm

Project name: KS100601B02 FCCID: YH2-MD110 Page 1 System Validation Plots Project name : KS100601B02 EUT DESCRIPTION Product name: GSM Mobile Phone Model No.: MD110 Trade name: DYNAMICS Tested date: June 7, 2010 Applicant: C-Mobi Techology Limited RM9A，9/F., JCG Building, 10-16 Mongkok Road, Mongkok, Kln., HongKong Air Temperature: 21 °C Liqued Temperature: 20 °C Crest Factor: CW:___1__ GSM:__8___ GPRS 10: __4___ Area Scan: 7 x 7 x 1 dx=15mm dy=15mm Zoom Scan: 5 x 5 x 7 dx=5mm dy=5mm dz=5mm Z Axis Scan: 1 x 1 x 21 dx=20mm dy=20mm dz=5mm Probe：Antennessa (SN:SN_1109_EP_100) Compliance Certification Services (Kunshan) Inc. No.10, Weiye Rd., Innovation Park, Eco & Tec. Development Part, Kunshan City, Jiangsu Province, PRC. TEL: 86-512-57355888 FAX: 86-512-57370818 http://www.ccsrf.com Project name: KS100601B02 FCCID: YH2-MD110 Page 2 850 HEAD VALIDATION I. RESULTS TYPE PAR AM E TE RS Noise -- Validation Measurement 1: Validation Plane with Dipole device position on Middle Channel in CW mode GSM850 Phone -- Project name: KS100601B02 FCCID: YH2-MD110 Page 3 MEASUREMENT 1 Type: Validation measurement (Complete) Date of measurement: 07/06/2010 Measurement duration: 6 minutes 41 seconds Mobile Phone IMEI number: -- A. Experimental conditions. Phantom File surf_sam_plan.txt, Adaptative 2 max Phantom Validation plane Device Position Dipole Band GSM850 Channels Middle Signal CW Project name: KS100601B02 FCCID: YH2-MD110 Page 4 B. Instrumentations. PC HP (Pentium(R) V 3.06GHz, SN:375052-AA1) Network Emulator R&S (CMU200, SN:B23-03291) Vo l t m e t e r Keithley (2000, SN:1015843) Synthetizer Agilent (E8257C, SN:MY43321570) Amplifier Mini-Circuits (ZHL-42, SN:110405) Power Meter Agilent (E4416A, SN:QB41292714) Probe Antennessa (SN:SN_1109_EP_100) Phantom Antennessa (SN:SN41_05_SAM29) Liquid Antennessa Project name: KS100601B02 FCCID: YH2-MD110 Page 5 C. SAR Measurement Results Frequency (MHz) 835.000110 Relative permitivity (real part) 41.657147 Relative permitivity (imaginary part) 19.589512 Conductivity (S/m) 0.921352 Variation (%) 0.470000 SURFACE SAR VOLUME SAR Project name: KS100601B02 FCCID: YH2-MD110 Page 6 Maximum location: X=0.00, Y=-5.00 SAR 1g (W/Kg) 9.574321 Project name: KS100601B02 FCCID: YH2-MD110 Page 7 Z Axis Scan Project name: KS100601B02 FCCID: YH2-MD110 Page 8 1900 HEAD VALIDATION I. RESULTS TYPE PAR AM E TE RS Noise -- Validation Measurement 1: Validation Plane with Cheek device position on Middle Channel in CW mode GSM1900 Phone -- Project name: KS100601B02 FCCID: YH2-MD110 Page 9 MEASUREMENT 1 Type: Validation measurement (Complete) Date of measurement: 07/06/2010 Measurement duration: 7 minutes 3 seconds Mobile Phone IMEI number: -- A. Experimental conditions. Phantom File surf_sam_plan.txt, Adaptative 2 max Phantom Validation plane Device Position Dipole Band GSM1900 Channels Middle Signal CW Project name: KS100601B02 FCCID: YH2-MD110 Page 10 B. SAR Measurement Results Frequency (MHz) 1900.000000 Relative permitivity (real part) 40.325472 Relative permitivity (imaginary part) 13.223120 Conductivity (S/m) 1.426101 Variation (%) 0.750000 SURFACE SAR VOLUME SAR Project name: KS100601B02 FCCID: YH2-MD110 Page 11 Maximum location: X=-1.00, Y=-1.00 SAR 1g (W/Kg) 40.147233 Project name: KS100601B02 FCCID: YH2-MD110 Page 12 Z Axis Scan Project name: KS100601B02 FCCID: YH2-MD110 Page 13 850 BODY VALIDATION I. RESULTS TYPE PAR AM E TE RS Noise -- Validation Measurement 1: Validation Plane with Dipole device position on Middle Channel in CW mode GSM850 Phone -- Project name: KS100601B02 FCCID: YH2-MD110 Page 14 MEASUREMENT 1 Type: Validation measurement (Complete) Date of measurement: 07/06/2010 Measurement duration: 6 minutes 51 seconds Mobile Phone IMEI number: -- A. Experimental conditions. Phantom File surf_sam_plan.txt, Adaptative 2 max Phantom Validation plane Device Position Dipole Band GSM850 Channels Middle Signal CW Project name: KS100601B02 FCCID: YH2-MD110 Page 15 B. Instrumentations. PC HP (Pentium(R) V 3.06GHz, SN:375052-AA1) Network Emulator R&S (CMU200, SN:B23-03291) Vo l t m e t e r Keithley (2000, SN:1015843) Synthetizer Agilent (E8257C, SN:MY43321570) Amplifier Mini-Circuits (ZHL-42, SN:110405) Power Meter Agilent (E4416A, SN:QB41292714) Probe Antennessa (SN:SN_1109_EP_100) Phantom Antennessa (SN:SN41_05_SAM29) Liquid Antennessa Project name: KS100601B02 FCCID: YH2-MD110 Page 16 C. SAR Measurement Results Frequency (MHz) 835.000004 Relative permitivity (real part) 56.451230 Relative permitivity (imaginary part) 22.1712012 Conductivity (S/m) 0.982310 Variation (%) 0.200000 SURFACE SAR VOLUME SAR Project name: KS100601B02 FCCID: YH2-MD110 Page 17 Maximum location: X=1.00, Y=-2.00 SAR 1g (W/Kg) 9.656247 Project name: KS100601B02 FCCID: YH2-MD110 Page 18 Z Axis Scan Project name: KS100601B02 FCCID: YH2-MD110 Page 19 1900 BODY VALIDATION I. RESULTS TYPE PAR AM E TE RS Noise -- Validation Measurement 1: Validation Plane with Dipole device position on Middle Channel in CW mode GSM1900 Phone -- Project name: KS100601B02 FCCID: YH2-MD110 Page 20 MEASUREMENT 1 Type: Validation measurement (Complete) Date of measurement:07/06/2010 Measurement duration: 6 minutes 43 seconds Mobile Phone IMEI number: -- A. Experimental conditions. Phantom File surf_sam_plan.txt, Adaptative 2 max Phantom Validation plane Device Position Dipole Band GSM1900 Channels Middle Signal CW B. SAR Measurement Results Project name: KS100601B02 FCCID: YH2-MD110 Page 21 Frequency (MHz) 1900.000000 Relative permitivity (real part) 52.027928 Relative permitivity (imaginary part) 13.630100 Conductivity (S/m) 1.486720 Variation (%) -0.100000 SURFACE SAR VOLUME SAR Project name: KS100601B02 FCCID: YH2-MD110 Page 22 Maximum location: X=0.00, Y=-1.00 SAR 1g (W/Kg) 38.574212 Project name: KS100601B02 FCCID: YH2-MD110 Page 23 Z Axis Scan Project name: KS100601B02 FCCID: YH2-MD110 Page 1 SAR Test Plots Project name : KS100601B02 EUT DESCRIPTION Product name: GSM Mobile Phone Model No.: MD110 Trade name: DYNAMICS Tested d…

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Compliance Certification Services (Kunshan)Inc. Report No: KS100601B02-SF FCCID: YH2-MD110 Date of Issue: June 7, 2010 Page 1 of 38 Rev. 00 ANSI/IEEE Std. C95.1-1992 In accordance with the requirements of FCC Report and Order: ET Docket 93-62, and OET Bulletin 65 Supplement C FCC SAR TEST REPORT For GSM Mobile Phone Model No.: MD110 Trade Name: DYNAMICS Test Report Number: KS100601B02-SF Prepared for C-Mobi Techology Limited RM9A，9/F., JCG Building, 10-16 Mongkok Road, Mongkok, Kln., HongKong Issued by Compliance Certification Services (Kunshan) Inc. No.10, Weiye Rd., Innovation Park, Eco & Tec. Development Part, Kunshan City, Jiangsu Province, P.R.China. TEL: 86-512-57355888 FAX: 86-512-57370818 http://www.ccsrf.com Note: This report shall not be reproduced except in full, without the written approval of Compliance Certification Services Inc. This document may be altered or revised by Compliance Certification Services Inc. personnel only, and shall be noted in the revision section of the document. Compliance Certification Services (Kunshan)Inc. Report No: KS100601B02-SF FCCID: YH2-MD110 Date of Issue: June 7, 2010 Page 2 of 38 Rev. 00 This report shall not be reproduced except in full, without the written approval of Compliance Certification Services Inc. TABLE OF CONTENTS 1. CERTIFICATE OF COMPLIANCE (SAR EVALUATION)..................................................... 3 2. EUT DESCRIPTION.............................................................................................................. 4 3. REQUIREMENTS FOR COMPLIANCE TESTING DEFINED BY THE FCC......................... 5 4. Applied Standards ..............................................................................................................5 5. Test Configuration ..............................................................................................................5 6. DOSIMETRIC ASSESSMENT SETUP ................................................................................. 5 6.1 MEASUREMENT SYSTEM DIAGRAM .......................................................................... 7 6.2 SYSTEM COMPONENTS .............................................................................................. 8 7. EVALUATION PROCEDURES........................................................................................... 10 8. MEASUREMENT UNCERTAINTY ..................................................................................... 14 9. EXPOSURE LIMIT .............................................................................................................. 15 10. EUT ARRANGEMENT .................................................................................................... 16 10.1ANTHROPOMORPHIC HEAD PHANTOM ................................................................. 16 10.2DEFINITION OF THE “CHEEK/TOUCH” POSITION .................................................. 17 10.3DEFINITION OF THE “TILTED” POSITION ................................................................ 18 11. MEASUREMENT RESULTS........................................................................................... 19 11.1TEST LIQUIDS CONFIRMATION ............................................................................... 19 11.2SYSTEM PERFORMANCE CHECK ........................................................................... 20 11.3EUT TUNE-UP PROCEDURES AND TEST MODE ................................................... 22 11.4RF POWER OUTPUT ................................................................................................. 23 11.5EUT SETUP PHOTOS ................................................................................................ 24 11.6SAR MEASUREMENT RESULTS............................................................................... 27 EUT PHOTO............................................................................................................................... 31 12. EQUIPMENT LIST & CALIBRATION STATUS .............................................................. 36 13. FACILITIES .....................................................................................................................37 14. REFERENCES ................................................................................................................ 37 15. ATTACHMENTS ............................................................................................................. 38 Compliance Certification Services (Kunshan)Inc. Report No: KS100601B02-SF FCCID: YH2-MD110 Date of Issue: June 7, 2010 Page 3 of 38 Rev. 00 This report shall not be reproduced except in full, without the written approval of Compliance Certification Services Inc. 1. CERTIFICATE OF COMPLIANCE (SAR EVALUATION) Product name: GSM Mobile Phone Model No.: MD110 Trade name: DYNAMICS Description: The EUT was scanned during the preliminary test，then SIM1 was found to transmit the highest SAR value after tested dual SIM1 and SIM2. Device Category: PORTABLE DEVICES Exposure Category: GENERAL POPULATION/UNCONTROLLED EXPOSURE Date of Test: June 7, 2010 Applicant: C-Mobi Techology Limited RM9A，9/F., JCG Building, 10-16 Mongkok Road, Mongkok, Kln., HongKong Manufacturer: C-Mobi Techology Limited RM9A，9/F., JCG Building, 10-16 Mongkok Road, Mongkok, Kln., HongKong Application Type: Certification APPLICABLE STANDARDS AND TEST PROCEDURES STANDARDS AND TEST PROCEDURES TEST RESULT FCC OET Bulletin 65 Supplement C and the following specific Test Procedures: o KDB 248227 D01 SAR measurement procedures for 802.11 a/b/g transmitters o KDB 648474 D01 SAR evaluation considerations for handsets with multiple transmitters and antennas Pass Deviation from Applicable Standard None The device was tested by Compliance Certification Services Inc. in accordance with the measurement methods and procedures specified in OET Bulletin 65 Supplement C(Edition 01-01). The test results in this report apply only to the tested sample of the stated device/equipment. Othe…

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MODEL TI TLE SHEET DATA DWG FDX 2008-02-20 MT6225RFSHEET 1 OF 9SINOMO C113 1nF C116100nF L102 0 L120 82 L121 36 C121150 C140 5.6pF C141 5.6pF L140 4.3nH C142 18pF L142 15nH C143 18pF C112100nF R102 1K C118100nF L103 15nH C135150 C110100pF 1 IN1 10 GND 5 GND 9 OUT1 8 OUT1 4 IN2 3 GND 2 GND 7 OUT2 6 OUT2 U102 SAWFARG1G8425Y4SA C151 18pF C155 18pF L141 15nH 1 IN 2 GND 3 OUT 4 OUT 5 GND U108SAFEA1G96FA0F00 1 IN 2 GND 3 OUT 4 OUT 5 GND U105SAFEB836MAL0F00R14 C146 5.6pF C147 5.6pF L143 4.3nH C184 1.5nH C183 1.5nH C182 4.7nH C181 4.7nH C186220pFC185220pFC12722pFC12822pFC126220pF R126 10K L122 0 L124 22pF C122NC C12456nH + C100 10UF C1363.9pF C13715pF R127NC 1 VCC_FE 2 I 3 IB 4 VCC_BBI 5 SDATA 6 SCLK 7 SEN 8 NC 9 VLDO3 10 TXOP_LO 11 TXOP_HI 12 VCC_TXVCO 13 VDD 14 VBAT 15 VLDO1 16 VLDO2 17 VCC_RF 18 VAFC 19 REFINB 20 REFIN 21 REF_OP 22 QB 23 Q 24 VCC_BBQ 25 RX1900B 26 RX1900 27 RX1800B 28 RX1800 29 RX900B 30 RX900 31 RX850B 32 RX850 33 GND U100 AD6548-LFCSP32 R1232.2k R124 2.2k C123 82pF R1212.2k R122 2.2k C161 82pF C125100pF C138 100nF C133 100nF C132 100nF C131 33nF C134 220pF C13939pFC150100pF R109 51R 1 GND 2 RFIN_HB 3 GND 4 RFIN_LB 5 GND 6 GND 7 VRAMP 8 TX_ENABLE 9 GPCTRL0 10 GPCTRL1 11 VBATT 12 NC 13 GND 14 GND 15 ANT 16 NC 17 RX1 18 RX0 19 NC 20 GND 21 GND 22 GND 23 GND U101 RF7168 C166 22pF C167 56pF C168 56 3 HOT 4 GND 1 HOT 2 GND X100 CRY26MSX3225 1 SH101 S2000-RFSD-1210 1 SH100 T2000-RFSD-1815 1 SH200 H2030T-BBSD-4132 1 SH1 H2030T-BTSD-2020 1 ANT PAD3520 1 ANT_GND PAD3520 12 MARK5 RFPORT C152 NC C153 NC L150 0 VDD [2,3,4,6,7] 26MHZ [2] VAFC [2] VCCRF [3] HB_TX [2] PCS_RX [2] VBAT BANDSW_DCS [2] PA_EN [2] VAPC [2] SDATA [2] SCLK [2] LE [2] I [2] IB [2] Q [2]…

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