2AP5R-ES-668Bone conduction headphone

ES-668 音量+ | Volume up 音量- | Volume down ⑥ 麦克风 | Microphone 磁吸充电口|Magnetic charging port 多功能键 产品使用和维护保养 温馨提示: 1、耳机应当存放在阴凉干燥处，工作温度应在0~45°C (32~113*F)。工作在过冷、过热或过潮湿的环境中工作可能会 缩短耳机的寿命。 2、过高音量下听音乐可能会损伤您的听力,声音也可能会失真,为 了交通安全,切勿在驾车或骑行时使用耳机。 3、每次运动完后请将耳机表面的水擦拭干净，特别是充电磁吸口 位置，防止汗水，盐水侵蚀充电口，影响产品寿命。 4、请用柔软的干布清洁耳机。 5、请勿接近尖硬物体,易损伤产品。 6、请勿长时间在阳光直射下使用耳机。 7、请勿将耳机置于极端光线、温度、或振动的环境中使用。 8、请勿在高温环境下使用耳机,例如同时合用吹风机,进入桑拿房 或靠近炉灶。 9、请勿将耳机置于不稳定的表面或倾斜的表面。 10、儿童应在成人监督下使用本设备,本产品并非玩具。 耳机充电 将原装充电线分别连接耳机磁吸口和充电头，耳机会在2小时内 充饱和。为更好保障充电寿命，请使用5V-1A的充电头。 注意： 磁吸充电有正负极对应，相互吸附可正常充电，相互排斥则无法 充电以及会造成主板电路短路，请不要强行让磁吸贴合接触。 警告： 本产品的可充电电池不短于产品寿命，电池必须由专业回收设备 取出，任何试图取出或者替换电池的行为将可能损坏耳机，并影 响到您的保修权利。请不要将电池放入火中，以免引起爆炸。 产品使用不当，容易造成产品本身伤害或者可能危及人身财产 安全。 如因消费者违反产品操作说明进行不恰当使用而造成的人身及 财产损害,本公司将不承担一切后果，及将不承担任何法律责任。 本器材符合LP0002低功率射频器材技术规范章节3.8.2.之规定。 取得实验证明之低功率射频器材，非经核准，公司、商号或使用者 均不得擅自变更频率、加大功率或变更原设计之特性及工能。低功 率射频器材之使用不得影响飞航安全及干拢合法通信；经发现有 干拢现象时，应立即停用，并改善至无干拢时方得继续使用。前述 合法通信，指依电信管理法规定作业之无线电通信。低功率射频器 材须忍受合法通信或工业、科学及医疗用电波辐射性电机设备之 干拢。 保修卡 保修期： 本产品保修期为：自购买日起12个月 维修方式： 在产品保修期内，凡属产品本身质量引起的故障请用户凭此 保修卡和有效购物凭证与售后人员联系以享受免费服务, 以下情况恕不免费维修： 1、自行拆卸造成损坏的 2、因受外力外壳或其他部件有严重变形 3、操作、存放不当而造成的损坏 4、因不可抗力造成故障或损坏 5、其它与上述相类似的情况 客户服务资料： 客户名称 联系电话 联系地址 产品型号 购买日期 销 售 商 维修日期 ⑤ 按住 键2秒 来电时按 1秒 来电时单击 待机时双击 通话时单击 待机时三击 按住 键2秒 音乐播放时单击 2.连接设备A 3.关闭A设备蓝牙 5.连接设备B 6.打开A设备蓝牙 N/A N/A N/A N/A N/A N/A 1 1 N/A N/A N/A N/A 回拨电话 拒接來电 骨传导耳机 材 质 扬声器灵敏度 SBC/AAC 26克（0.91盎司） ES-668 87dB ±3dB 6小时 (70%音量） -38dB±2dB IPX5 180 3 麦克风灵敏度 蓝牙续航时间 ② ① ③ ⑥ ④ ⑤ 硅胶+钛合金 按住 键3秒 按住 键5秒 1.按住 键5秒 4.按住 键5秒 M M M M M M M M M M M M 一声提示音 M 同配对多点连接 防水等级 c h N/ A 1 1 N/ A N/ A N/ A 1. The earphone should be stor ed in a cool and dry place, and the working temperatur e should be 0一45 °C (32 - 113 F): Working in an environment that is t oo c old, t oo hot or t oo humid may shorten the life of the headphone. 2. Lis tening to music at t oo high a volume may damage your he aring and the sound may be distort ed. F or tr affic safety , Ple ase do not use the headphone while driving or riding. 3. A ft er e xer cise, please wipe the water on the surfac e of the he adphone, especially the position of the magnetic charging port, t o pr event sweat and salt from eroding the charging port and aff ec ting the servic e lif e of the produc t. 4. Cle an the headphones with a soft, dr y clo th. 5. Ple ase k eep away fr om sharp and hard objects, which may damage the headphone. 6.Do not use the headphone in direc t sunlight for a long time. 7.Do not use the headphone in extr eme light, t emperatur e or vibration. 8.Ple ase do not use headphone in high temperatur e environment. F or e xample, use a hair dryer and enter the sauna room at the same time or near the stove. 9. Do not place the headphone on an unstable or indined surfac e. 10. Children should use this devic e under the supervision of adults. This produc t is not a t oy . Improper u se of the headphone may cause injury to itself or may endanger personal and property safety. In case of personal and property damage caused by improper use or warning by co nsumers in violation of product instructions. the co mpany will not bear all consequence s and the co mpany will not bear any legal liability. Warr anty period: 12 months from the date of purchase Free of charge ser vic e: During the warr anty period, if there is any break down caused by the produc t' s build quality please c ont ac t the seller and pr ovide this warr anty car d t og ether with the sales invoice. The pr oduc t will be rep air ed or replac ed by a new one. The warr anty does not apply under the following circums tanc es: 1、The produc t label is brok en. 2、Damage c aused due to the produc t being disassembled by a non-authorized r ep air agent . 3、Damage c aused by external for ce or when there is visible def orma tion of any of the external part s. 4、The produc t has been improperly used or stor ed. 5、Damage or break down caused by for ce majeure. 6、Other situations similar to the above. Cus tomer servic e inf orma tion: Cus tomer Name Cus tomer Phone Cus tomer Address Model Number Pur chase Date De aler Invoice number Tips and Maintenance Connect the original charging cable to the magnetic suction port of the headse t and the charging head r espectively , and the headphone will be fully charged within 2 hours. In order t o be tter ensure the char ging life, ple ase use the 5V-1A charging head. To charge the headphone Ther e ar e positive and negative poles corr esponding to the magnetic suction charging. Mutual adsorption can charge normally; Mutual exclusion can not charge, which may cause short cir cuit of the main boar d cir cuit . Ple ase do not f or ce the magnetic suc tion t o fit and cont ac t. No te: The life of r echargeable batter y of this produc t is not shorter than the servic e lif e of the produc t. The batter y must be t ak en out by pr of essional rec ycling equipment. Any attemp t t o t ak e out or replac e the batter y may damage the headphone and affec t your warr anty rights. Ple ase do not put the batter y int o the fire t o avoid explosion. Warning: Multi-Func tion Button( M ) Reminder Warr anty car d Bone Conduction Headphone ES-668 Bluetooth® V5.3 SIlica gel+Titanium alloy+PC A2DP,AVRCP,HFP More than 10 meters without obstruction 20Hz-20kHz SBC/AAC 180mA / 3.7V li-polymer 6 hrs(70%Volume) 2 hrs 5v Bone Conduction speaker 87dB±3dB -38dB±2dB IPX5 26g (0.91oz) Product type Model no# Bluetooth version Material Bluetooth protocols Effective range Frequency response Audio Code Battery capacity Standby duration Charge time Input voltage Speak er type Speaker sensitivity Microphone sensitivity Waterproof rating Weight Power on Power off Pairing Multi-Point Connection Play〡Pause Rejec t c all Ac cep t c all Redial Voic e assistant Ac cep t inc oming call and end current one "P ower on" "P ower off" "P airing" Speech N/ A Beep Tone Keep pr essing M key f or 2s Keep pressing M key f or 3s Keep pressing M key f or 5s 1.K eep pressing M key f or 5s 2.Connect de vic e A 3. Turn off Bluetoo th of devic e A 4.K eep pre…

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Label Location: FCC ID: 2AP5R-ES-668

Shenzhen Tongzhou Testing Co.,Ltd FCC ID:2AP5R-ES-668 This report shall not be reproduced except in full, without the written approval of Shenzhen Tongzhou Testing Co.,Ltd Page 1 of 3 INTERIOR PHOTOGRAPHS OF EUT Fig.1 Fig.2 Shenzhen Tongzhou Testing Co.,Ltd FCC ID:2AP5R-ES-668 This report shall not be reproduced except in full, without the written approval of Shenzhen Tongzhou Testing Co.,Ltd Page 2 of 3 Fig.3 Fig.4 Bluetooth Antenna Shenzhen Tongzhou Testing Co.,Ltd FCC ID:2AP5R-ES-668 This report shall not be reproduced except in full, without the written approval of Shenzhen Tongzhou Testing Co.,Ltd Page 3 of 3 Fig.5 Fig.6

Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 This report shall not be reproduced except in full, without the written approval of Shenzhen Tongzhou Testing Co.,Ltd Page 1 of 3 RADIO FREQUENCY EXPOSURE Limit According to section B.4 of 447498 D04 Interim General RF Exposure Guidance v01 SAR-based thresholds are derived based on frequency, power, and separation distance of the RF source. The formula defines the thresholds in general for either available maximum time-averaged power or maximum time-averaged ERP, whichever is greater. If the ERP of a device is not easily determined, such as for a portable device with a small form factor, the applicant may use the available maximum time-averaged power exclusively if the device antenna or radiating structure does not exceed an electrical length of λ/4. As for devices with antennas of length greater than λ/4 where the gain is not well defined, but always less than that of a half-wave dipole (length λ/2), the available maximum time-averaged power generated by the device may be used in place of the maximum time-averaged ERP, where that value is not known. The separation distance is the smallest distance from any part of the antenna or radiating structure for all persons, during operation at the applicable ERP. In the case of mobile or portable devices, the separation distance is from the outer housing of the device where it is closest to the antenna. The SAR-based exemption formula of § 1.1307(b)(3)(i)(B), repeated here as Formula (B.2), applies for single fixed, mobile, and portable RF sources with available maximum time-averaged power or effective radiated power (ERP), whichever is greater, of less than or equal to the threshold Pth (mW). This method shall only be used at separation distances from 0.5 cm to 40 cm and at frequencies from 0.3 GHz to 6 GHz (inclusive). Pth is given by Formula (B.2). Where and f is in GHz, d is the separation distance (cm), and ERP 20cm is per Formula (B.1). Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 This report shall not be reproduced except in full, without the written approval of Shenzhen Tongzhou Testing Co.,Ltd Page 2 of 3 The example values shown in Table B.2 are for illustration only. Frequency (MHz) Distance (mm) 5 10 15 20 25 30 35 40 45 50 300 39 65 88 110 129 148 166 184 201 217 450 22 44 67 89 112 135 158 180 203 226 835 9 25 44 66 90 116 145 175 207 240 1900 3 12 26 44 66 92 122 157 195 236 2450 3 10 22 38 59 83 111 143 179 219 3600 2 8 18 32 49 71 96 125 158 195 5800 1 6 14 25 40 58 80 106 136 169 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 This report shall not be reproduced except in full, without the written approval of Shenzhen Tongzhou Testing Co.,Ltd Page 3 of 3 Conducted Power Results Test Mode Channel Frequency (MHz) Measured Peak Output Power (dBm) GFSK 00 2402 0.99 39 2441 2.2 78 2480 2.12 π/4-DQPSK 00 2402 1.69 39 2441 2.8 78 2480 2.89 Manufacturing tolerance GFSK (Peak) Channel Channel 0 Channel 39 Channel 78 Target (dBm) 0.5 2.0 2.0 Tolerance ±(dB) 1.0 1.0 1.0 π/4-DQPSK (Peak) Channel Channel 0 Channel 39 Channel 78 Target (dBm) 1.5 2.0 2.0 Tolerance ±(dB) 1.0 1.0 1.0 Results Test Mode Channel Frequency (MHz) Max. Tune Up Power (dBm, Peak) Max. Eirp including Tune Up (dBm, Peak) Max. Eirp including Tune Up (mW, Peak) Exemption Limit (mW) GFSK 2402 1.5 3.25 2.11 3 2441 3.0 4.75 2.99 3 2480 3.0 4.75 2.99 3 π/4-DQPSK 2402 2.5 4.25 2.66 3 2441 3.0 4.75 2.99 3 2480 3.0 4.75 2.99 3 The antenna gain of the EUT for BT is 1.75dBi(Max). the Maximum Eirp is used for Routine Evaluation Exemption according to B.4 of 447498 D04 Interim General RF Exposure Guidance v01. So, the SAR evaluation is not required.

承 認 書 SPECIFICATION FOR APPROVAL 客戶名稱 CUSTOMER ： 客戶料號 CUSTOMER’S P/N ： 料號 PART NUMBER ： WAN3216F245H08 規格 DESCRIPTION ： Chip Antenna 3216 L Ant 2.45G Type H08 版本 VERSION ： V1.6 日期 ISSUE DATE ： 2022/01/05 客 戶 承 認 CUSTOMER APPROVED 工 程 部 R&D CENTER 承 認 APPROVAL 確 認 CHECKED 製 作 DRAWN Ray Tennyson Snow 萬誠科技股份有限公司 OneWave Electronic Co., Ltd. 11261台北市北投區立功街151號1樓 1F, No. 151, Li Gong Street, Beitou District, Taipei City 11261, Taiwan 電話: (02) 2898-2220 TEL: +886 2 2898-2220 傳真: (02) 2898-5055 FAX: +886 2 2898-5055 2/11 ONEWAVE TECHNOLOGY CO., LTD. 3216 Chip antenna For Bluetooth / WLAN Applications Dimension (mm) L 3.23 ± 0.20 W 1.66 ± 0.20 T 0.45 ± 0.20 P/N: WAN3216F245H08 3/11 ONEWAVE TECHNOLOGY CO., LTD. Part Number Information WAN 3216 F 245 H 08 A B C D E F A Product Series Antenna B Dimension L x W 3.2 x 1.6mm (±0.2mm) C Material High K material D Working Frequency 2.4 ~ 2.5GHz E Feeding mode PIFA & Single Feeding F Antenna type Type = 08 1. Electrical Specification Remark : Bandwidth & Peak Gain was measured under evaluation board of next page Specification Part Number WAN3216F245H08 Central Frequency 2450 MHz Bandwidth 120 (Min.) MHz Return Loss -6.5 (Max) dB Peak Gain 1.75 dBi Impedance 50 Ohm Operating Temperature -40～+110 °C Maximum Power 4 W Resistance to Soldering Heats 10 ( @ 260°C) sec. Polarization Linear Azimuth Beamwidth Omni-directional Termination Cu / Sn (Leadless) 4/11 ONEWAVE TECHNOLOGY CO., LTD. 2. Recommended PCB Pattern Evaluation Board Dimension 2 nd Evaluation Board Dimension Suggested Matching Circuit 重要資訊 : 匹配元件建議使用精準度高的電感±0.1~0.3nH、電容±0.1pF 5/11 ONEWAVE TECHNOLOGY CO., LTD. Layout Dimensions in Clearance area( Size=5.9*5.0mm) FootPrint (Unit : mm) ◆ 2 nd Layout Dimensions in Clearance area( Size=8.0*3.0mm) Matching Circuit 50 ohm transmission Line 6/11 ONEWAVE TECHNOLOGY CO., LTD. 3. Measurement Results Return Loss 7/11 ONEWAVE TECHNOLOGY CO., LTD. Radiation Pattern Efficiency Peak Gain Directivity 2400MHz 81.46% 1.67 dBi 2.56 dBi 2450MHz 84.75% 1.75 dBi 2.46 dBi 2500MHz 82.68% 1.70 dBi 2.52 dBi Chamber Coordinate System X Y Z 8/11 ONEWAVE TECHNOLOGY CO., LTD. 4.Reliability and Test Condictions ITEM REQUIREMENTS TEST CONDITION Solderability 1. Wetting shall exceed 90% coverage 2. No visible mechanical damage Pre-heating temperature:150°C/60sec. Solder temperature:230±5°C Duration:4±1sec. Solder:Sn-Ag3.0-Cu0.5 Flux for lead free: rosin Solder heat Resistance 1. No visible mechanical damage 2. Central Freq. change :within ± 6% 10 ± 0.5 sec. 60 sec . . T E M P ( °C ) 150 °C 2 6 0 °C Pre-heating temperature:150°C/60sec. Solder temperature:260±5°C Duration:10±0.5sec. Solder:Sn-Ag3.0-Cu0.5 Flux for lead free: rosin Component Adhesion (Push test) 1. No visible mechanical damage The device should be reflow soldered(230±5°C for 10sec.) to a tinned copper substrate A dynometer force gauge should be applied the side of the component. The device must with-ST-F 0.5 Kg without failure of the termination attached to component. Component Adhesion (Pull test) 1. No visible mechanical damage Insert 10cm wire into the remaining open eye bend ,the ends of even wire lengths upward and wind together. Terminal shall not be remarkably damaged. Thermal shock 1. No visible mechanical damage 2. Central Freq. change :within ±6% Phase Temperature(°C) Time(min) 1 +110±5°C 30±3 2 Room Temperature Within 3sec 3 -40±2°C 30±3 4 Room Temperature Within 3sec +110°C=>30±3min -40°C=>30±3min Test cycle:10 cycles The chip shall be stabilized at normal condition for 2~3 hours before measuring. Resistance to High Temperature 1. No visible mechanical damage 2. Central Freq. change :within ±6% 3. No disconnection or short circuit. Temperature: +110±5°C Duration: 1000±12hrs The chip shall be stabilized at normal condition for 2~3 hours before measuring. Resistance to Low Temperature 1. No visible mechanical damage 2. Central Freq. change :within ±6% 3. No disconnection or short circuit. Temperature:-40±5°C Duration: 1000±12hrs The chip shall be stabilized at normal condition for 2~3 hours before measuring. Humidity 1. No visible mechanical damage 2. Central Freq. change :within ±6% 3. No disconnection or short circuit. Temperature: 40±2°C Humidity: 90% to 95% RH Duration: 1000±12hrs The chip shall be stabilized at normal condition for 2~3 hours before measuring. 4±1 sec. 60sec TEMP (°C) 150°C 230°C 9/11 ONEWAVE TECHNOLOGY CO., LTD. 5.Soldering and Mounting Mildly activated rosin fluxes are preferred. The minimum amount of solder can lead to damage from the stresses caused by the difference in coefficients of expansion between solder, chip and substrate. The terminations are suitable for all wave and re-flow soldering systems. If hand soldering cannot be avoided, the preferred technique is the utilization of hot air soldering tools. Recommended temperature profiles for re-flow soldering in Figure 1. Products attachment with a soldering iron is discouraged due to the inherent process control limitations. In the event that a soldering iron must be employed the following precautions are recommended. ‧Preheat circuit and products to 150°C ‧Never contact the ceramic with the iron tip ‧Use a 20 watt soldering iron with tip diameter of 1.0mm ‧280°C tip temperature (max) ‧1.0mm tip diameter (max) ‧Limit soldering time to 3 sec. SOLDERING COOLING NATURAL PRE-HEATING TEMPERATURE(°C) 60~120 s 10s max. 30~60s 250~260 230 180 150 TIME(sec.) Reflow Soldering SOLDERING COOLING NATURAL PRE-HEATING TEMPERATURE(°C) within 3s Gradual cooling 150 TIME(sec.) Iron Soldering Over 60s 350 300 10/11 ONEWAVE TECHNOLOGY CO., LTD. 6.Packaging Information Tape Specification: Reel Specification: (7’’, Φ180 mm) Tape Width(mm) A(mm) B(mm) C(mm) D(mm) Chip/Reel(pcs) 8 9.0±0.5 60±2 13.5±0.5 178±2 3000 11/11 ONEWAVE TECHNOLOGY CO., LTD. 7.Storage and Transportation Information Storage Conditions To maintain the solderability of terminal electrodes: 1. Temperature and humidity conditions: -10~ 40°C and 30~70% RH. 2. Recommended products shoul…

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Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 1 of 34 Appendix Test Data for BT(BDR/EDR) (Conducted Measurement) Product Name: Bone conduction headphone Trade Mark: MoreinTech Test Model: ES-668 FCC ID: 2AP5R-ES-668 Environmental Conditions Temperature: 22.8 C Relative Humidity: 60% ATM Pressure: 100.0 kPa Test Engineer: Anna Hu Supervised by: Hugo Chen NOTE N/A Appendix A: 20dB Emission Bandwidth Test Result TestMode Antenna Channel 20db EBW[MHz] FL[MHz] FH[MHz] Limit[MHz] Verdict DH5 Ant1 2402 0.936 2401.565 2402.501 --- --- 2441 0.945 2440.559 2441.504 --- --- 2480 0.930 2479.565 2480.495 --- --- 2DH5 Ant1 2402 1.275 2401.400 2402.675 --- --- 2441 1.293 2440.373 2441.666 --- --- 2480 1.323 2479.364 2480.687 --- --- Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 2 of 34 Test Graphs DH5_Ant1_2402 DH5_Ant1_2441 DH5_Ant1_2480 2DH5_Ant1_2402 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 3 of 34 2DH5_Ant1_2441 2DH5_Ant1_2480 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 4 of 34 Appendix B: Occupied Channel Bandwidth Test Result TestMode Antenna Channel OCB [MHz] FL[MHz] FH[MHz] Limit[MHz] Verdict DH5 Ant1 2402 0.86896 2401.5829 2402.4518 --- --- 2441 0.87432 2440.5836 2441.4579 --- --- 2480 0.86012 2479.5885 2480.4486 --- --- 2DH5 Ant1 2402 1.1993 2401.4264 2402.6257 --- --- 2441 1.1929 2440.4291 2441.6220 --- --- 2480 1.1911 2479.4320 2480.6231 --- --- Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 5 of 34 Test Graphs DH5_Ant1_2402 DH5_Ant1_2441 DH5_Ant1_2480 2DH5_Ant1_2402 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 6 of 34 2DH5_Ant1_2441 2DH5_Ant1_2480 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 7 of 34 Appendix C: Maximum Peak conducted output power Test Result TestMode Antenna Channel Result[dBm] Limit[dBm] Verdict DH5 Ant1 2402 0.99 ≤30 PASS 2441 2.2 ≤30 PASS 2480 2.12 ≤30 PASS 2DH5 Ant1 2402 1.69 ≤20.97 PASS 2441 2.8 ≤20.97 PASS 2480 2.89 ≤20.97 PASS Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 8 of 34 Test Graphs DH5_Ant1_2402 DH5_Ant1_2441 DH5_Ant1_2480 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 9 of 34 2DH5_Ant1_2402 2DH5_Ant1_2441 2DH5_Ant1_2480 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 10 of 34 Appendix D: Carrier frequency separation Test Result TestMode Antenna Channel Result[MHz] Limit[MHz] Verdict DH5 Ant1 Hop 1.16 ≥0.945 PASS 2DH5 Ant1 Hop 1.156 ≥0.882 PASS Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 11 of 34 Test Graphs DH5_Ant1_Hop 2DH5_Ant1_Hop Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 12 of 34 Appendix E: Time of occupancy Test Result TestMode Antenna Channel BurstWidth [ms] TotalHops [Num] Result[s] Limit[s] Verdict DH5 Ant1 Hop 2.885 130 0.375 ≤0.4 PASS 2DH5 Ant1 Hop 2.891 110 0.318 ≤0.4 PASS Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 13 of 34 Test Graphs DH5_Ant1_Hop 2DH5_Ant1_Hop Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 14 of 34 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 15 of 34 Appendix F: Number of hopping channels Test Result TestMode Antenna Channel Result[Num] Limit[Num] Verdict DH5 Ant1 Hop 79 ≥15 PASS 2DH5 Ant1 Hop 79 ≥15 PASS Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 16 of 34 Test Graphs DH5_Ant1_Hop 2DH5_Ant1_Hop Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 17 of 34 Appendix G: Band edge measurements Test Result TestMode Antenna ChName Channel RefLevel [dBm] Result [dBm] Limit [dBm] Verdict DH5 Ant1 Low 2402 0.48 -49.43 ≤-19.52 PASS High 2480 1.85 -48.42 ≤-18.15 PASS Low Hop_2402 -0.61 -47.83 ≤-20.61 PASS High Hop_2480 1.28 -45.7 ≤-18.72 PASS 2DH5 Ant1 Low 2402 0.42 -49.12 ≤-19.58 PASS High 2480 1.69 -49.45 ≤-18.31 PASS Low Hop_2402 -0.61 -49.89 ≤-20.61 PASS High Hop_2480 -0.78 -46.98 ≤-20.78 PASS Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 18 of 34 Test Graphs DH5_Ant1_Low_2402 DH5_Ant1_High_2480 DH5_Ant1_Low_Hop_2402 DH5_Ant1_High_Hop_2480 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 19 of 34 2DH5_Ant1_Low_2402 2DH5_Ant1_High_2480 2DH5_Ant1_Low_Hop_2402 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 20 of 34 2DH5_Ant1_High_Hop_2480 Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 21 of 34 Appendix H: Conducted Spurious Emission Test Result TestMode Antenna Channel FreqRange [MHz] RefLevel [dBm] Result [dBm] Limit [dBm] Verdict DH5 Ant1 2402 Reference 0.03 0.03 --- PASS 30~1000 0.03 -55.8 ≤-19.97 PASS 1000~26500 0.03 -41.58 ≤-19.97 PASS 2441 Reference 0.89 0.89 --- PASS 30~1000 0.89 -54.96 ≤-19.11 PASS 1000~26500 0.89 -42.01 ≤-19.11 PASS 2480 Reference 1.09 1.09 --- PASS 30~1000 1.09 -53.01 ≤-18.91 PASS 1000~26500 1.09 -43.39 ≤-18.91 PASS 2DH5 Ant1 2402 Reference -1.00 -1.00 --- PASS 30~1000 -1.00 -55.22 ≤-21 PASS 1000~26500 -1.00 -41.73 ≤-21 PASS 2441 Reference 1.01 1.01 --- PASS 30~1000 1.01 -57.05 ≤-18.99 PASS 1000~26500 1.01 -43.64 ≤-18.99 PASS 2480 Reference -1.95 -1.95 --- PASS 30~1000 -1.95 -53.09 ≤-21.95 PASS 1000~26500 -1.95 -43.7 ≤-21.95 PASS Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 22 of 34 Test Graphs DH5_Ant1_2402_0~Reference DH5_Ant1_2402_30~1000 DH5_Ant1_2402_1000~26500 DH5_Ant1_2441_0~Reference Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 Report No.: TZ230604505-E Page 23 of 34 DH5_Ant1_2441_30~1000 DH5_Ant1_2441_1000~26500 DH5_An…

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Report No.: TZ230604505-E Page 1 of 38 FCC TEST REPORT Test report On Behalf of Shenzhen XinShuoYa Electronics Co., Ltd. For Bone conduction headphone Model No: ES-668 FCC ID: 2AP5R-ES-668 Prepared for : Shenzhen XinShuoYa Electronics Co., Ltd. (3F, Area A) Plant 1, Zone B, Dong Wangyang Industrial park Huangtian, Xixiang, Baoan, Shenzhen, China Prepared By : Shenzhen Tongzhou Testing Co.,Ltd 1th Floor, Building 1, Haomai High-tech Park, Huating Road 387, Dalang Street, Longhua, Shenzhen, China Date of Test: 2023/6/27–2023/7/7 Date of Report: 2023/7/8 Report Number: TZ230604505-E The test report apply only to the specific sample(s) tested under stated test conditions It is not permitted to copy extracts of these test result without the written permission of the test laboratory. Report No.: TZ230604505-E Page 2 of 38 TEST RESULT CERTIFICATION Applicant’s name ................. : Shenzhen XinShuoYa Electronics Co., Ltd. Address .................................. : (3F, Area A) Plant 1, Zone B, Dong Wangyang Industrial park Huangtian, Xixiang, Baoan, Shenzhen, China Manufacture's Name ............ : Shenzhen XinShuoYa Electronics Co., Ltd. Address .................................. : (3F, Area A) Plant 1, Zone B, Dong Wangyang Industrial park Huangtian, Xixiang, Baoan, Shenzhen, China Product description Trade Mark ............................. : MoreinTech Product name ........................... : Bone conduction headphone Model No ................................ : ES-668 Standards ............................. : FCC Rules and Regulations Part 15 Subpart C Section 15.247 ANSI C63.10: 2013 This publication may be reproduced in whole or in part for non-commercial purposes as long as the Shenzhen Tongzhou Testing Co.,Ltd is acknowledged as copyright owner and source of the material. Shenzhen Tongzhou Testing Co.,Ltd takes no responsibility for and will not assume liability for damages resulting from the reader's interpretation of the reproduced material due to its placement and context. Date of Test ............................. ........... : Date (s) of performance of tests ........... : 2023/6/27-2023/7/7 Date of Issue ......................................... : 2023/7/8 Test Result ............................................ : PASS Testing Engineer : (Nancy Li) Technical Manager : (Hugo Chen) Authorized Signatory : (Andy Zhang) Report No.: TZ230604505-E Page 3 of 38 Revision History Revision Issue Date Revisions Revised By 00 2023/7/8 Initial Issue Andy Zhang Report No.: TZ230604505-E Page 4 of 38 TABLE OF CONTENTS Description Page 1. GENERAL INFORMATION ................................................................................................................ 5 1.1. Description of Device (EUT) ................................................................................................................... 5 1.2 Support equipment List ................................................................................................................................ 5 1.3 EUT configuration ......................................................................................................................................... 5 The following peripheral devices and interface cables were connected during the measurement: ....... 5 1.4 External I/O Cable ........................................................................................................................................ 5 1.5 Description of Test Facility .......................................................................................................................... 6 1.6 Statement of the Measurement Uncertainty ............................................................................................. 7 1.7 Measurement Uncertainty ........................................................................................................................... 7 1.8 Description of Test Modes .......................................................................................................................... 7 2. TEST METHODOLOGY ...................................................................................................................... 8 2.1 EUT Configuration ........................................................................................................................................ 8 2.2 EUT Exercise ................................................................................................................................................ 8 2.3 General Test Procedures ............................................................................................................................ 8 2.4. Test Sample ................................................................................................................................................. 8 3. SYSTEM TEST CONFIGURATION .................................................................................................. 9 3.1 Justification .................................................................................................................................................... 9 3.2 EUT Exercise Software ............................................................................................................................... 9 3.3 Special Accessories ..................................................................................................................................... 9 3.4 Block Diagram/Schematics ......................................................................................................................... 9 3.5 Equipment Modifications ............................................................................................................................. 9 3.6 Test Setup ..................................................................................................................................................... 9 4. SUMMARY OF TEST RESULTS ...................................…

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Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 This report shall not be reproduced except in full, without the written approval of Shenzhen Tongzhou Testing Co.,Ltd Page 1 of 2 TEST SETUP PHOTOS OF THE EUT Radiated Emission Below 1GHz Radiated Emission Above 1GHz Shenzhen Tongzhou Testing Co.,Ltd FCC ID: 2AP5R-ES-668 This report shall not be reproduced except in full, without the written approval of Shenzhen Tongzhou Testing Co.,Ltd Page 2 of 2 Conducted Emission