2BTTE-V8Bluetooth walkie-talkie

FCCStatement: Thisdevicecomplieswithpart15oftheFCCRules. Operationissubjecttothefollowingtwoconditions: (1)Thisdevicemaynotcauseharmfulinterference,and (2)thisdevicemustacceptanyinterferencereceived, includinginterferencethatmaycauseundesiredoperation. ThisequipmenthasbeentestedandfoundtocomplywiththelimitsforaClassB digitaldevice, pursuanttopart15oftheFCCRules. Theselimitsaredesignedtoprovidereasonableprotectionagainstharmful interferenceinaresidential installation. Thisequipmentgenerates,usesandcanradiateradiofrequencyenergyand,ifnot installedandusedin accordancewiththeinstructions, maycauseharmfulinterferencetoradiocommunications. However,thereisnoguaranteethatinterferencewillnotoccurinaparticular installation. Ifthisequipmentdoescauseharmfulinterferencetoradioortelevisionreception, whichcanbedeterminedbyturningtheequipmentoffandon, theuserisencouragedtotrytocorrecttheinterferencebyoneormoreofthe followingmeasures: —Reorientorrelocatethereceivingantenna. —Increasetheseparationbetweentheequipmentandreceiver. —Connecttheequipmentintoanoutletonacircuitdifferentfromthattowhichthe receiverisconnected. —Consultthedealeroranexperiencedradio/TVtechnicianforhelp.Caution:Any changesormodifications notexpresslyapprovedbytheparty

ShenzhenHoutonsenElectronicsCo.,Ltd. (2025.12.31) EurofinsElectricalandElectronicTestingNA,Inc. 914WestPatapscoAvenue Baltimore,MD21230 RE:AttestationStatementsPart2.911(d)(5)(i)requestfor(FCCID:2BTTE-V8) [ShenzhenHoutonsenElectronicsCo.,Ltd.](“theapplicant”)certifiesthatthe equipmentforwhichauthorizationissoughtisnot“covered”equipmentprohibited fromreceivinganequipmentauthorizationpursuanttosection2.903oftheFCCrules. Wealsocertifythat,asofthedateofthefilingoftheapplication,theequipmentdoes notutilizecyber-securityoranti-virussoftwarefromKasperskyLab,Inc,oranyofits successorsandassignees,whichisalsoonthe“coveredlist”. Sincerely, (Applicantsignature) (Applicantprintedname)MengXianfu ShenzhenHoutonsenElectronicsCo.,Ltd. (2025.12.31) EurofinsElectricalandElectronicTestingNA,Inc. 914WestPatapscoAvenue Baltimore,MD21230 RE:AttestationStatementsPart2.911(d)(5)(ii)requestfor(FCCID:2BTTE-V8) [ShenzhenHoutonsenElectronicsCo.,Ltd.](“theapplicant”)certifiesthat,asofthe dateofthefilingoftheapplication,theapplicantisnotidentifiedontheCoveredListas anentityproducing“covered”equipment. Sincerely, (Applicantsignature) (Applicantprintedname) MengXianfu

ShenzhenHoutonsenElectronicsCo.,Ltd. AgentAuthorizationLetter 2025-12-31 EurofinsElectricalandElectronicTestingNA,Inc. 914WestPatapscoAvenue Baltimore,MD21230 USA RE:LETTEROFAGENTAUTHORIZATION ToWhomItMayConcern: We,theundersigned,herebyauthorizeShenzhenMostTechnologyServiceCo.,Ltd.toact onourbehalfinallmattersrelatingtoapplicationforequipmentauthorization,includingthe signingofalldocumentsrelatingtothesematters. Wealsoherebycertifythatnopartytotheapplicationauthorizedhereunderissubjecttothe denialofbenefits,includingFCCbenefits,pursuanttoSection5301oftheAnti-DrugAbuse Actof1988,21U.S.C.853(a). Thisagreementexpiresoneyearfromthecurrentdate. Sincerely, Name:MengXianfu Position:MANAGER CompanyName:ShenzhenHoutonsenElectronicsCo.,Ltd. Address:Room302,BuildingBPlantShangliLangIndustrialZone,Shangli LangCommunityNanwanSubdistrict,LonggangDistrictShenzhen, GuangdongProvince,China Tel/Fax13632828338 E-Mail:[email protected]

ShenzhenHoutonsenElectronicsCo.,Ltd. LongTermConfidentialityRequestLetter 2025-12-31 EurofinsElectricalandElectronicTestingNA,Inc. 914WestPatapscoAvenue Baltimore,MD21230 USA RE:CONFIDENTIALITYREQUESTFOR(FCCID:2BTTE-V8) ToWhomItMayConcern: Thisletterservesasanofficialrequestforconfidentialityundersections0.457and0.459of CFR47.Wehaverequestedthatthe -e.g.Blockdiagram -e.g.SCH -e.g.OperationalDescription requiredtobesubmittedwiththisapplicationbepermanentlywithheldfrompublicreview. Theabovedocumentsarecompanyproprietaryinformationthatcouldnevergetinto thepossessionofyourcompetition. Pleasecontactmeifthereisanyinformationyoumayneed. Sincerely, Name:MengXianfu Position:MANAGER CompanyName:ShenzhenHoutonsenElectronicsCo.,Ltd. Address:Room302,BuildingBPlantShangliLangIndustrialZone,Shangli LangCommunityNanwanSubdistrict,LonggangDistrictShenzhen, GuangdongProvince,China Tel/Fax13632828338 E-Mail:[email protected]

ModelNo.:V8 FRONTVIEWOFSAMPLE BACKVIEWOFSAMPLE ModelNo.:V8 LEFTVIEWOFSAMPLE RIGHTVIEWOFSAMPLE ModelNo.:V8 TOPVIEWOFSAMPLE BOTTOMVIEWOFSAMPLE ModelNo.:V8 PHOTOOFTHEENTIRESAMPLE PHOTOOFTHEENTIRESAMPLE

ModelNo.:V8 Page1of3 INTERNALPHOTOOFSAMPLE INTERNALPHOTOOFSAMPLEPCB ModelNo.:V8 Page2of3 INTERNALPHOTOOFSAMPLEPCB INTERNALPHOTOOFSAMPLEPCB BTantenna ModelNo.:V8 Page3of3 INTERNALPHOTOOFSAMPLE

ShenzhenMostTechnologyServiceCo.,Ltd. No.5,2ndLangshanRoad,NorthDistrict,Hi-techIndustrialPark,Nanshan, Shenzhen,Guangdong,China. RFExposureEvaluationReport ReportReferenceNo........................: FCCID.................................................: MTEB25120264-H 2BTTE-V8 Compiledby (position+printedname+signature) .. :FileadministratorsAlisaLuo Supervisedby (position+printedname+signature)..:TestEngineerSunnyDeng Approvedby (position+printedname+signature)..: ManagerYvetteZhou Dateofissue.........................................:Dec.23,2025 RepresentativeLaboratoryName.:ShenzhenMostTechnologyServiceCo.,Ltd. Address.................................................: No.5,2ndLangshanRoad,NorthDistrict,Hi-techIndustrialPark, Nanshan,Shenzhen,Guangdong,China. Applicant’sname ............................... :ShenzhenHoutonsenElectronicsCo.,Ltd. Address.................................................: Room302,BuildingBPlantShangliLangIndustrialZone,Shangli LangCommunityNanwanSubdistrict,LonggangDistrictShenzhen, GuangdongProvince,China Testspecification/Standard............: 47CFRPart1.1307 47CFRPart2.1093 TRFOriginator......................................:ShenzhenMostTechnologyServiceCo.,Ltd. ShenzhenMostTechnologyServiceCo.,Ltd.Allrightsreserved. Thispublicationmaybereproducedinwholeorinpartfornon-commercialpurposesaslongasthe ShenzhenMostTechnologyServiceCo.,Ltd.isacknowledgedascopyrightownerandsourceofthe material.ShenzhenMostTechnologyServiceCo.,Ltd.takesnoresponsibilityforandwillnotassume liabilityfordamagesresultingfromthereader'sinterpretationofthereproducedmaterialduetoits placementandcontext. Testitemdescription ........................ : Bluetoothwalkie-talkie TradeMark ............................................ : Houtonsen、Teleheer、SWAREY Model/Typereference ......................... : V8 ListedModels......................................: N/A ModulationType..................................: GFSK,π/4DQPSK,8DPSK OperationFrequency..........................: From2402MHzto2480MHz HardwareVersion................................. 1.0 SoftwareVersion ................................... 1.0 Rating ..................................................... : DC3.7VbyBattery DC5VbyUSBPort Result ..................................................... : PASS ReportNo.:MTEB25120264-HPage 2 of 5 TESTREPORT EquipmentunderTest:Bluetoothwalkie-talkie Model/Type:V8 ListedModels:N/A RemarkN/A Applicant: ShenzhenHoutonsenElectronicsCo.,Ltd. Address: Room302,BuildingBPlantShangliLangIndustrialZone,Shangli LangCommunityNanwanSubdistrict,LonggangDistrict Shenzhen,GuangdongProvince,China Manufacturer:ShenzhenHoutonsenElectronicsCo.,Ltd. Address : Room302,BuildingBPlantShangliLangIndustrialZone,Shangli LangCommunityNanwanSubdistrict,LonggangDistrict Shenzhen,GuangdongProvince,China TestResult:PASS Thetestreportmerelycorrespondstothetestsample. Itisnotpermittedtocopyextractsofthesetestresultwithoutthewrittenpermissionofthetest laboratory. ReportNo.:MTEB25120264-HPage 3 of 5 1.RevisionHistory RevisionIssueDateRevisionsRevisedBy 00 2025.12.23 InitialIssueAlisaLuo ReportNo.:MTEB25120264-HPage 4 of 5 2.SAREvaluation 2.1RFExposureComplianceRequirement 2.1.1StandardRequirement AccordingtoKDB447498D01GeneralRFExposureGuidancev06 4.3.1.StandaloneSARtestexclusionconsiderations UnlessspecificallyrequiredbythepublishedRFexposureKDBprocedures,standalone1-gheadorbodyand 10-gextremitySARevaluationforgeneralpopulationexposureconditions,bymeasurementornumerical simulation,isnotrequiredwhenthecorrespondingSARExclusionThresholdcondition,listedbelow,is satisfied. 2.1.2Limits The1-gand10-gSARtestexclusionthresholdsfor100MHzto6GHzattestseparationdistances≤50mm aredeterminedby: [(max.powerofchannel,includingtune-uptolerance,mW)/(min.testseparationdistance,mm)]·[√f(GHz)] ≤3.0for1-gSARand≤7.5for10-gextremitySAR,where Thetestexclusionsareapplicableonlywhentheminimumtestseparationdistanceis≤50mmand fortransmissionfrequenciesbetween100MHzand6GHz.Whentheminimumtestseparation distanceis<5mm,adistanceof5mmisappliedtodetermineSARtestexclusion ReportNo.:MTEB25120264-HPage 5 of 5 2.1.3EUTRFExposure MeasurementData EDR GFSK Testchannel PeakOutputPower (dBm) Tuneuptolerance (dBm) Maximumtune-upPower (dBm) Lowest(2402MHz)0.630.63±11.63 Middle(2441MHz)0.200.20±11.2 Highest(2480MHz)0.640.64±11.64 π/4DQPSK Testchannel PeakOutputPower (dBm) Tuneuptolerance (dBm) Maximumtune-upPower (dBm) Lowest(2402MHz)1.481.48±12.48 Middle(2441MHz)1.051.05±12.05 Highest(2480MHz)1.431.43±12.43 8DPSK Testchannel PeakOutputPower (dBm) Tuneuptolerance (dBm) Maximumtune-upPower (dBm) Lowest(2402MHz)1.941.94±12.94 Middle(2441MHz)1.471.47±12.47 Highest(2480MHz)1.851.85±12.85 Worstcase:8DPSK Channel MaximumPeak ConductedOutput Power (dBm) Maximumtune-up Power Calculated value Exclusion threshold SARTest Exclusion (dBm)(mW) Lowest(2402MHz)1.942.941.970.613.0Yes .......................THEENDOFREPORT.........................

ShenzhenMostTechnologyServiceCo.,Ltd. No.5,2ndLangshanRoad,NorthDistrict,Hi-techIndustrialPark,Nanshan, Shenzhen,Guangdong,China. TESTREPORT FCCRulesPart15.247 ReportReferenceNo........................: FCCID.................................................: MTEB25120264-R 2BTTE-V8 Compiledby (position+printedname+signature)..:FileadministratorsAlisaLuo Supervisedby (position+printedname+signature)..:TestEngineerSunnyDeng Approvedby (position+printedname+signature) .. : ManagerYvetteZhou Dateofissue.........................................:Dec.23,2025 RepresentativeLaboratoryName.:ShenzhenMostTechnologyServiceCo.,Ltd. Address ................................................. : EastA,1/F.,NewAolinFactoryBuiding,LangshanErlu,North Area,Hi-TechIndustrialPark,NanshanDistrict,Shenzhen, Guangdong,China Applicant’sname...............................:ShenzhenHoutonsenElectronicsCo.,Ltd. Address.................................................: Room302,BuildingBPlantShangliLangIndustrialZone,Shangli LangCommunityNanwanSubdistrict,LonggangDistrictShenzhen, GuangdongProvince,China Testspecification/Standard ............ : FCCRulesPart15.247 TRFOriginator......................................:ShenzhenMostTechnologyServiceCo.,Ltd. ShenzhenMostTechnologyServiceCo.,Ltd.Allrightsreserved. Thispublicationmaybereproducedinwholeorinpartfornon-commercialpurposesaslongasthe ShenzhenMostTechnologyServiceCo.,Ltd.isacknowledgedascopyrightownerandsourceofthe material.ShenzhenMostTechnologyServiceCo.,Ltd.takesnoresponsibilityforandwillnotassume liabilityfordamagesresultingfromthereader'sinterpretationofthereproducedmaterialduetoits placementandcontext. Testitemdescription ........................ : Bluetoothwalkie-talkie TradeMark ............................................ : Houtonsen、Teleheer、SWAREY Model/Typereference ......................... : V8 ListedModels......................................: N/A ModulationType..................................: GFSK,π/4DQPSK,8DPSK OperationFrequency..........................: From2402MHzto2480MHz HardwareVersion................................. 1.0 SoftwareVersion ................................... 1.0 Rating ..................................................... : DC3.7VbyBattery DC5VbyUSBPort Result ..................................................... :PASS ReportNo.:MTEB25120264-RPage 2 of 50 TESTREPORT EquipmentunderTest:Bluetoothwalkie-talkie Model/Type:V8 ListedModels:N/A RemarkN/A Applicant: ShenzhenHoutonsenElectronicsCo.,Ltd. Address: Room302,BuildingBPlantShangliLangIndustrialZone,Shangli LangCommunityNanwanSubdistrict,LonggangDistrict Shenzhen,GuangdongProvince,China Manufacturer:ShenzhenHoutonsenElectronicsCo.,Ltd. Address : Room302,BuildingBPlantShangliLangIndustrialZone,Shangli LangCommunityNanwanSubdistrict,LonggangDistrict Shenzhen,GuangdongProvince,China TestResult : PASS Thetestreportmerelycorrespondstothetestsample. Itisnotpermittedtocopyextractsofthesetestresultwithoutthewrittenpermissionofthetest laboratory. ReportNo.:MTEB25120264-RPage 3 of 50 Contents 1REVISIONHISTORY...........................................................................................................................4 2TESTSTANDARDS..............................................................................................................................5 3SUMMARY.................................................................................................................................................6 3.1GeneralRemarks..........................................................................................................................................6 3.2ProductDescription.....................................................................................................................................6 3.3EquipmentUnderTest.................................................................................................................................6 3.4ShortdescriptionoftheEquipmentunderTest(EUT).............................................................................6 3.5EUToperationmode.....................................................................................................................................7 3.6BlockDiagramofTestSetup.......................................................................................................................7 3.7TestItem(EquipmentUnderTest)Description*........................................................................................7 3.8AuxiliaryEquipment(AE)Description........................................................................................................7 3.9AntennaInformation*...................................................................................................................................7 3.10RelatedSubmittal(s)/Grant(s).................................................................................................................8 3.11Modifications...............................................................................................................................................8 3.12EUTconfiguration.......................................................................................................................................8 4TESTENVIRONMENT........................................................................................................................9 4.1Addressofthetestlaboratory....................................................................................................................9 4.2Environmentalconditions............................................................................................................................9 4.3Summaryofmeasurementresults............................................................................................................10 4.4Statementofthemeasurementuncertainty............................................................................................10 4.5Equipment…

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ReportNo.:MTEB25120264-RPage 36 of 50 8DPSK_3-DH5_Channel08DPSK_3-DH5_Channel39 8DPSK_3-DH5_Channel78 ReportNo.:MTEB25120264-RPage 37 of 50 APPENDIXIV.CarrierFrequenciesSeparation TestResult ModulationPacket LeftCenter frequency (MHz) RightCenter frequency (MHz) Hopping Frequency Separation (MHz) Limit(MHz)Result GFSKDH52440.00032441.00991.00960.707PASS GFSKDH52439.99312440.89470.90160.707PASS GFSKDH52440.00092441.00211.00120.707PASS π/4DQPSK2-DH52439.98652441.17581.18930.891PASS π/4DQPSK2-DH52439.99012441.16981.17970.891PASS π/4DQPSK2-DH52439.84792441.28021.43230.891PASS 8DPSK3-DH52439.89022440.83890.94870.872PASS 8DPSK3-DH52439.86712440.98891.12180.872PASS 8DPSK3-DH52439.98682440.95320.96640.872PASS TestGraphs GFSKGFSK GFSKπ/4DQPSK π/4DQPSKπ/4DQPSK ReportNo.:MTEB25120264-RPage 38 of 50 8DPSK8DPSK 8DPSK ReportNo.:MTEB25120264-RPage 39 of 50 APPENDIXV.ConductedSpurious&BandEdgeEmission TestResult Non-Hopping ModulationPacketChannel OOB Emission Frequency (MHz) OOB Emission Level (dBm) Limit (dBm) OverLimit (dB) Result GFSKDH5 0 2397.02-49.885-19.58-30.305PASS 2400.00-51.682-19.58-32.102PASS 4804.30-55.051-19.58-35.471PASS 7205.80-49.518-19.58-29.938PASS 9607.90-43.535-19.58-23.955PASS 39 4882.30-51.688-20.1-31.588PASS 7323.11-50.548-20.1-30.448PASS 9763.93-43.281-20.1-23.181PASS 78 2483.50-51.255-19.61-31.645PASS 4960.33-50.145-19.61-30.535PASS 7439.85-49.393-19.61-29.783PASS 9919.99-43.413-19.61-23.803PASS π/4DQPSK2-DH5 0 2397.33-49.165-19.5-29.665PASS 2400.00-51.433-19.5-31.933PASS 4804.30-52.693-19.5-33.193PASS 7205.80-52.352-19.5-32.852PASS 9607.90-43.509-19.5-24.009PASS 39 4882.30-56.354-20.03-36.324PASS 7323.11-52.342-20.03-32.312PASS 9763.93-42.736-20.03-22.706PASS 78 2483.50-50.870-19.72-31.150PASS 4959.70-52.217-19.72-32.497PASS 7439.85-51.138-19.72-31.418PASS 9919.99-43.269-19.72-23.549PASS 8DPSK3-DH5 0 2400.00-48.844-19.56-29.284PASS 4804.26-54.221-19.56-34.661PASS 7206.38-50.478-19.56-30.918PASS 9607.87-43.434-19.56-23.874PASS 39 4881.67-53.748-20.11-33.638PASS 7323.11-53.417-20.11-33.307PASS 9763.93-43.434-20.11-23.324PASS 78 2483.50-51.891-19.73-32.161PASS 4960.33-54.748-19.73-35.019PASS 7440.47-51.583-19.73-31.853PASS 9919.99-43.115-19.73-23.385PASS Note:inputcompensationcoeffcient(dB)=CableLoss(dB) Hopping ModulationPacketChannel OOB Emission Frequency (MHz) OOB Emission Level (dBm) Limit (dBm) OverLimit (dB) Result GFSKDH5 Hopping 2398.20-49.384-19.76-29.624PASS 2400.00-50.735-19.76-30.975PASS 2483.50-50.778-19.73-31.048PASS 2400.00-48.686-19.72-28.966PASS 2483.50-50.990-19.79-31.200PASS 2396.31-49.236-19.85-29.386PASS 2400.00-51.288-19.85-31.438PASS 2483.50-51.217-19.63-31.587PASS π/4DQPSK2-DH5 2398.58-49.305-19.79-29.515PASS 2400.00-50.777-19.79-30.987PASS 2483.50-50.622-19.76-30.862PASS 2396.73-49.442-19.7-29.742PASS 2400.00-50.930-19.7-31.230PASS 2483.50-50.675-19.83-30.845PASS 2395.26-48.771-20.51-28.261PASS 2400.00-50.734-20.51-30.224PASS 2483.50-50.472-20.4-30.072PASS 8DPSK3-DH52398.72-49.389-19.64-29.749PASS ReportNo.:MTEB25120264-RPage 40 of 50 2400.00-51.114-19.64-31.474PASS 2483.50-50.634-19.8-30.834PASS 2396.12-49.694-19.81-29.884PASS 2400.00-51.027-19.81-31.217PASS 2483.50-50.844-19.76-31.084PASS 2397.67-49.610-20.15-29.460PASS 2400.00-50.802-20.15-30.652PASS 2483.50-48.817-19.86-28.957PASS Note:inputcompensationcoeffcient(dB)=CableLoss(dB) TestGraphs OutOfBandEmission GFSK_DH5_Channel0 OutOfBandEmission π/4DQPSK_2-DH5_Channel0 30.0MHz-25000.0MHz GFSK_DH5_Channel0 30.0MHz-25000.0MHz π/4DQPSK_2-DH5_Channel0 OutOfBandEmission GFSK_DH5_Channel39 OutOfBandEmission π/4DQPSK_2-DH5_Channel39 ReportNo.:MTEB25120264-RPage 41 of 50 30.0MHz-25000.0MHz GFSK_DH5_Channel39 30.0MHz-25000.0MHz π/4DQPSK_2-DH5_Channel39 OutOfBandEmission GFSK_DH5_Channel78 OutOfBandEmission π/4DQPSK_2-DH5_Channel78 30.0MHz-25000.0MHz GFSK_DH5_Channel78 30.0MHz-25000.0MHz π/4DQPSK_2-DH5_Channel78 OutOfBandEmission 8DPSK_3-DH5_Channel0 30.0MHz-25000.0MHz 8DPSK_3-DH5_Channel0 ReportNo.:MTEB25120264-RPage 42 of 50 OutOfBandEmission 8DPSK_3-DH5_Channel39 30.0MHz-25000.0MHz 8DPSK_3-DH5_Channel39 OutOfBandEmission 8DPSK_3-DH5_Channel78 30.0MHz-25000.0MHz 8DPSK_3-DH5_Channel78 OutOfBandEmission(Left) GFSK_DH5_ChannelHopping OutOfBandEmission(Left) π/4DQPSK_2-DH5_ChannelHopping OutOfBandEmission(Right) GFSK_DH5_ChannelHopping OutOfBandEmission(Right) π/4DQPSK_2-DH5_ChannelHopping

ReportNo.:MTEB25120264-RPage 43 of 50 OutOfBandEmission(Left) GFSK_DH5_ChannelHopping OutOfBandEmission(Left) π/4DQPSK_2-DH5_ChannelHopping OutOfBandEmission(Right) GFSK_DH5_ChannelHopping OutOfBandEmission(Right) π/4DQPSK_2-DH5_ChannelHopping OutOfBandEmission(Left) GFSK_DH5_ChannelHopping OutOfBandEmission(Left) π/4DQPSK_2-DH5_ChannelHopping OutOfBandEmission(Right) GFSK_DH5_ChannelHopping OutOfBandEmission(Right) π/4DQPSK_2-DH5_ChannelHopping ReportNo.:MTEB25120264-RPage 44 of 50 OutOfBandEmission(Left) 8DPSK_3-DH5_ChannelHopping OutOfBandEmission(Right) 8DPSK_3-DH5_ChannelHopping OutOfBandEmission(Left) 8DPSK_3-DH5_ChannelHopping OutOfBandEmission(Right) 8DPSK_3-DH5_ChannelHopping OutOfBandEmission(Left) 8DPSK_3-DH5_ChannelHopping OutOfBandEmission(Right) 8DPSK_3-DH5_ChannelHopping ReportNo.:MTEB25120264-RPage 45 of 50 APPENDIXVI.DutyCycle TestResult ModulationPacketsChannel OnTime (ms) Period (ms) Duty Cycle(%) Duty Cycle (linear) Duty Cycle Factor (dB) 1/T GFSKDH5 02.8803.74876.840.76841.14410.3472 392.8783.74876.790.76791.1470.3475 782.8803.74876.840.76841.14410.3472 π/4DQPSK2-DH5 02.8843.74876.950.76951.13790.3467 392.8843.74876.950.76951.13790.3467 782.8843.74876.950.76951.13790.3467 8DPSK3-DH5 02.8883.74877.050.77051.13230.3463 392.8883.74877.050.77051.13230.3463 782.8883.74877.050.77051.13230.3463 TestGraphs GFSK(DH5)_Channel0GFSK(DH5)_Channel39 GFSK(DH5)_Channel78π/4DQPSK(2-DH5)_Channel0 π/4DQPSK(2-DH5)_Channel39π/4DQPSK(2-DH5)_Channel78 ReportNo.:MTEB25120264-RPage 46 of 50 8DPSK(3-DH5)_Channel08DPSK(3-DH5)_Channel39 8DPSK(3-DH5)_Channel78 ReportNo.:MTEB25120264-RPage 47 of 50 APPENDIXVII.DwellTime TestResult ModulationPacketChannel Pulse Width(ms) Numberof Pulsesin 31.6 seconds DwellTime (ms) Limit(ms)Result GFSK DH1 Hopping 0.3756312117.19 <400 PASS DH31.632165269.28PASS DH52.880109313.92PASS π/4DQPSK 2-DH10.3840316121.34PASS 2-DH31.632158257.86PASS 2-DH52.912104302.85PASS 8DPSK 3-DH10.3864319123.26PASS 3-DH31.632149243.17PASS 3-DH52.91295276.64PASS Note:Dwelltime=Pulsetime(ms)*NumberofPulsesin31.6seconds TestGraphs PulseWidth GFSK_DH1 NumberofPulsesin31.6seconds GFSK_DH1 PulseWidth GFSK_DH3 NumberofPulsesin31.6seconds GFSK_DH3 PulseWidth GFSK_DH5 NumberofPulsesin31.6seconds GFSK_DH5

ReportNo.:MTEB25120264-RPage 48 of 50 PulseWidth π/4DQPSK_2-DH1 NumberofPulsesin31.6seconds π/4DQPSK_2-DH1 PulseWidth π/4DQPSK_2-DH3 NumberofPulsesin31.6seconds π/4DQPSK_2-DH3 PulseWidth π/4DQPSK_2-DH5 NumberofPulsesin31.6seconds π/4DQPSK_2-DH5 PulseWidth 8DPSK_3-DH1 NumberofPulsesin31.6seconds 8DPSK_3-DH1 ReportNo.:MTEB25120264-RPage 49 of 50 PulseWidth 8DPSK_3-DH3 NumberofPulsesin31.6seconds 8DPSK_3-DH3 PulseWidth 8DPSK_3-DH5 NumberofPulsesin31.6seconds 8DPSK_3-DH5 ReportNo.:MTEB25120264-RPage 50 of 50 APPENDIXVIII.NumberOfHoppingChannel TestResult ModulationPacket NumberofHopping Channel LimitResult GFSKDH57915PASS π/4DQPSK2-DH57915PASS 8DPSK3-DH57915PASS TestGraphs HoppingPlot GFSK HoppingPlot π/4DQPSK HoppingPlot 8DPSK **********************EndofReport**********************

Approval sheet Page 1 of 9 ASC_RFANT5220110A0T_V13 Sep. 2012 MULTILAYER CERAMIC ANTENNA RFANT Pb free Series – RoHS Compliance Halogens Free Product 2.4 GHz ISM Band Working Frequency P/N: RFANT5220110A0T *Contents in this sheet are subject to change without prior notice. Approval sheet Page 2 of 9 ASC_RFANT5220110A0T_V13 Sep. 2012 FEATURES 1. Surface Mounted Devices with a small dimension of 5.2 x 2.0 x 1.1 mm 3 meet future miniaturization trend. 2. Embedded and LTCC (Low Temperature Co-fired Ceramic) technology is able to future integrate with system design as well as beautifying the housing of final product. 3. High Stability in Temperature / Humidity Change APPLICATIONS 1. Bluetooth 2. Wireless LAN 3. HormRF 4. ISM band 2.4GHz wireless applications DESCRIPTION Walsin Technology Corporation develops a new ceramic embedded antenna specified for 2.4 GHz ISM Band application, as shown in below “CONSTRUCTION”. Both of Wireless LAN IEEE 802.11b and Bluetooth TM typically located on this unlicensed frequency band which range covers from 2.4GHz to 2.4835GHz. To fulfil the friendly usage for antenna, this antenna has been designed to a typical 150MHz bandwidth through Walsin’s advanced LTCC (Low Temperature Co-fired Ceramic) technology and superior product design via 3D EM Simulation Skill. This antenna has a rectangular ceramic body with a tiny dimension of 5.2x 2.0 x 1.1 mm 3 meet the future SMT automation and miniaturization requirements on modern portable devices. CONSTRUCTION Identification mark Soldering terminal W T C W T C Feeding Identification mark Soldering terminal W T C W T C Feeding DIMENSIONS Figure Symbol Dimension L 5.20 ± 0.20 mm W 2.00 ± 0.20 mm T 1.15 ± 0.10 mm A 0.40 ± 0.25 mm Approval sheet P age 3 of 9 ASC_RFANT5220110A0T_V13 Sep. 2012 SOLDER LAND PATTERN DESIGN Figure ELECTRICAL CHARACTERISTICS RFANT5220110A0T Specification Working Frequency Range 2.4 GHz ～ 2.5GHz Gain 2.66 dBi (Typical) VSWR 2 max. Polarization Linear Azimuth Bandwidth Omni-directional Impedance 50Ω Rated Power (max.) 3 Watts Maximum Input Power 5 Watts for 5 minutes Operation Temperature -40 ̊C ~ +85 ̊C Remark: The specification is defined based on the test board dimension as in below Approval sheet Page 4 of 9 ASC_RFANT5220110A0T_V13 Sep. 2012 Antenna on Test Board ( FR4 Thickness 0.8mm) Antenna S11 on Test Board Bandwidth >150MHzBandwidth >150MHz Empty Area Empty Area 18x9 mm 50Ω ΩΩ ΩFeed line GROUND 30x18 mm 1mm 3.3mm 1.5mm WTC 2.5mm 18mm Empty Area Empty Area 18x9 mm 50Ω ΩΩ ΩFeed line GROUND 30x18 mm 1mm 3.3mm 1.5mm WTC 2.5mm 18mm Approval sheet Page 5 of 9 ASC_RFANT5220110A0T_V13 Sep. 2012 RADIATION PATTERN Radiation Pattern and Gain were dependent on measurement board design. The specification of RFANT5220110A0T antenna was measured based on the PCB size and installation position as shown in the below figure Test Board Vertical Horizontal Y - Z Plane Average Gai n= -0.82 dBi Peak Gain = 1.69 dBi Average Gain =-3.22 dBi Peak Gain= -5.42 dBi Average Gain=-8.98 dBi X - Z Plane Average Gain=-0.91 dBi Peak Gain= -5.97 dBi Average Gain=-3.24dBi Peak Gain= 2.66 dBi Average Gain= -8.61 dBi X - Y Plane Average Gain= -0.68 dBi Peak Gain= -5.97 dBi Average Gain=-3.12 dBi Peak Gain= 2.59 dBi Average Gain= -9.24 dBi Y Z WTC X Y Z WTC X Y Z WTC X Y Z WTC X Y Z WTC X Y Z WTC X z Y z Y z X z X X Y X Y Empty Area GROUND 30x18 mm WTC X Y Z Empty Area GROUND 30x18 mm WTC X Y Z X Y Z Approval sheet Page 6 of 9 ASC_RFANT5220110A0T_V13 Sep. 2012 RELIABILITY TEST Test item Test condition / Test method Specification Solderability JIS C 0050-4.6 JESD22-B102D *Solder bath temperature：235 ± 5°C *Immersion time：2 ± 0.5 sec *Solder：Sn3Ag0.5Cu for lead-free At least 95% of a surface of each terminal electrode must be covered by fresh solder. Leaching (Resistance to dissolution of metallization) IEC 60068-2-58 *Solder bath temperature：260 ± 5°C *Leaching immersion time：30 ± 0.5 sec *Solder : SN63A Loss of metallization on the edges of each electrode shall not exceed 25%. Resistance to soldering heat JIS C 0050-5.4 *Preheating temperature：120~150°C, 1 minute. *Solder temperature：270±5°C *Immersion time：10±1 sec *Solder：Sn3Ag0.5Cu for lead-free Measurement to be made after keeping at room temperature for 24±2 hrs No mechanical damage. Samples shall satisfy electrical specification after test. Loss of metallization on the edges of each electrode shall not exceed 25%. Drop Test JIS C 0044 *Height：75 cm *Test Surface： Rigid surface of concrete or steel. *Times：6 surfaces for each units；2 times for each side. No mechanical damage. Samples shall satisfy electrical specification after test. Adhesive Strength of Termination JIS C 0051- 7.4.3 *Pressurizing force： 5N(≦0603)；10N(>0603) *Test time：10±1 sec No remarkable damage or removal of the termination. Bending test JIS C 0051- 7.4.1 The middle part of substrate shall be pressurized by means of the pressurizing rod at a rate of about 1 mm/s per second until the deflection becomes 1mm/s and then pressure shall be maintained for 5±1 sec. Measurement to be made after keeping at room temperature for 24±2 hours No mechanical damage. Samples shall satisfy electrical specification after test. Approval sheet Page 7 of 9 ASC_RFANT5220110A0T_V13 Sep. 2012 Temperature cycle JIS C 0025 1. 30±3 minutes at -40°C±3°C, 2. 10~15 minutes at room temperature, 3. 30±3 minutes at +85°C±3°C, 4. 10~15 minutes at room temperature, Total 100 continuous cycles Measurement to be made after keeping at room temperature for 24±2 hrs No mechanical damage. Samples shall satisfy electrical specification after test. Vibration JIS C 0040 *Frequency：10Hz~55Hz~10Hz(1min) *Total amplitude：1.5mm *Test times：6hrs.(Two hrs each in three mutually perpendicular directions) No mechanical damage. Samples shall satisfy electrical specification after test. High temperature JIS C 0021 *Temperature：85°C±2°C *Test duration：1000+24/-0 hours Measurement to be made after keeping at room temperature for 24±2 hrs No mechanical damage. Sa…

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ModelNo.:V8 CETESTSETUP RETESTSETUP ModelNo.:V8 RETESTSETUP