A3LSLS-2A00002100

Samsung Electronics Co Ltd

LTE Evolved UTRAN Node-B System

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Application Details

Equipment Class: TNB - Licensed Non-Broadcast Station Transmitter
Date of Grant: Apr 12, 2010
Application Purpose: Original Equipment
Date of Application: Apr 12, 2010
Equipment Note: LTE Evolved UTRAN Node-B System
Frequency Range: 2135.00000000 - 2140.00000000
Company: Samsung Electronics Co Ltd
Country: United States

Documents & Files

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Users Manual

Cover Letter(s)

External Photos

ID Label/Location Info

Internal Photos

Test Report

Test Setup Photos

Technical Specifications

#	Rule Parts	Frequency Range	Power Output	Emission	Tolerance
2	27	2.13 GHz - 2.14 GHz	120 W	4M50W7D	0.0004 ppm

Confidentiality

Long Term

Grant Notes

Combined conducted output power is listed above. This device has 2T2R Spatial Multiplexing MIMO. The highest measured RF conducted output power at each transmitting chain is 60 W. The antenna(s) used for this transmitter must be fixed-mounted on outdoor permanent structures. RF exposure compliance is addressed at the time of licensing, as required by the responsible FCC Bureau(s), including antenna co-location requirements of section 1.1307(b)(3) of the Rules.