VO8BH-320BLUETOOTH HEADSET (CLASS 2)

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FRONT VIEW OF SAMPLE BOTTOM VIEW OF EUT LEFT VIEW OF SAMPLE RIGHT VIEW OF SAMPLE TOP VIEW OF SAMPLE BOTTOM VIEW OF SAMPLE

FCC ID Label Location FCC ID: VO8BH-320

FCC ID Label Location FCC ID: VO8BH-320

INTERNAL VIEW OF SAMPLE – 1 INTERNAL VIEW OF SAMPLE – 2

Preliminary Datasheet Released date: 02/20/2008 © 2000~2008 Integrated Systems Solution Corporation Revision1.0 Page 10 創傑科技股份有限公司 Integrated System Solution Corp. www.issc.com.tw Bluetooth Single Chip v2.0 w/ EDR IS1610N 5 Functional Description 5.1 Overall Architecture The ISSC IS1610N integrates an enhanced EDR Bluetooth RF & BB core, HCI controller, Audio controller and an ENHANCED 8051 processor with an internal mask ROM for program memory and SRAM for data memory. An innovative interconnection structure called the Common-Memory Architecture (CMA) is designed to provide a fast and flexible data movement scheme between the embedded processor, Bluetooth core, and peripheral hardware within this SRAM data memory space. For audio and power management, IS1610N provide embedded audio code and some power management to reduce the external components. Figure 1 – Block diagram for IS1610N Common SRAM (24KB) EDR Modem A- law/u- law /CVSD encoder/ decoder RF FSM controller & Registers Embedded Processor - ROM HCI Control logic Common Memory CPU Interface & Interrupt controller Memory mapped Register Bank Misc. Logic Clock Timer Hopping Sequence Controller Task Controller UART GPIO Voice Codec PLL 1.8V LDO . SAR ADC EDR RF Preliminary Datasheet Released date: 02/20/2008 © 2000~2008 Integrated Systems Solution Corporation Revision1.0 Page 11 創傑科技股份有限公司 Integrated System Solution Corp. www.issc.com.tw Bluetooth Single Chip v2.0 w/ EDR IS1610N 5.2 Radio Frequency (RF) 5.2.1 Transmitter The internal PA has a maximum output power of +4dBm with level control 8dB from amplitude control. This is applied into Class2/3 radios without external RF PA. If you want a larger output power for Class1 application, the external PA can be used. The transmitter features IQ direct conversion to minimize the frequency drift. And it can excess 30dB power range with temperature compensation machine. 5.2.2 Receiver The LNA can be operated into two type modes. One type is TR-combined mode for single port application. The other type is TR-separated mode for dual port application that used an external PA/LNA application. The image rejection filter is to reject image frequency for low-IF architecture. This filter for low-IF architecture is implied to reduce external BPF component for super heterodyne architecture. The ADC is utilized to sample input analogue wave to convert into digital for de- modulator analysis. Before the ADC, a channel filter has been integrated into receiver channel that can reduce the external component count and increase the anti-interference capacity. For avoiding temperature variation issues, a temperature sensor with temperature calibration is utilized into bias current and gain control of LNA, Mixers, and RF AMP. 5.2.3 Synthesizer The internal loop filter is used to reduce external RC components. This can reduce cost and variations for components. This internal LC tank for VCO is utilized to reduce variation for components. The cost is down at the same time. A fully integrated synthesizer has been created. There requires no external VCO, varactor diode, resonator and loop filter. Preliminary Datasheet Released date: 02/20/2008 © 2000~2008 Integrated Systems Solution Corporation Revision1.0 Page 12 創傑科技股份有限公司 Integrated System Solution Corp. www.issc.com.tw Bluetooth Single Chip v2.0 w/ EDR IS1610N 5.3 SAR ADC Voltage Converter The 10-bit Successive-Approximation analog to digital converter (SAR ADC) features 1 dedicated channel for battery power detection and 1 channel for external peripheral temperature sensing. This ADC has 10 bits resolution that provides a high accurate monitoring for battery voltage. The operating current is very low and almost consumes no power when disabled. Preliminary Datasheet Released date: 02/20/2008 © 2000~2008 Integrated Systems Solution Corporation Revision1.0 Page 13 創傑科技股份有限公司 Integrated System Solution Corp. www.issc.com.tw Bluetooth Single Chip v2.0 w/ EDR IS1610N 5.4 MODEM There are three different modulations for Bluetooth v2.0 w/ EDR. In figure 2, we summarized these modulations and data rate. Figure 2 – Modulation type for Bluetooth v2.0 w/ EDR Data Rate Modulation Bits/Symbol BDR: 1 Mbps GFSK 1 EDR: 2 Mbps π/4 DQPSK 2 EDR: 3 Mbps 8DPSK 3 5.4.1 Basic Data Rate MODEM (BDR) On the Bluetooth v1.2 specification and below, 1 Mbps was the standard data rate based on Gaussian Frequency Shift Keying (GFSK) modulation scheme. This basic rate modem meets BDR requirements of Bluetooth v2.0+EDR specification. Figure 3 – Data format for BDR Access Code Header Payload 5.4.2 Enhanced Data Rate MODEM (EDR) On the Bluetooth v2.0+EDR specification, Enhanced Data Rate (EDR) has been introduced to provide 2 and 3 Mbps data rates as well as 1 Mbps. This enhanced data rate modem meets EDR requirements of Bluetooth v2.0+EDR specification. For the viewpoint of baseband, both BDR and EDR utilize the same 1MHz symbol rate and 1.6 KHz slot rate. For BDR, 1 symbol represents 1 bit. However each symbol in the payload part of EDR packets represents 2 or 3 bits. This is achieved by using two different modulations, π/4 DQPSK and 8DPSK. Preliminary Datasheet Released date: 02/20/2008 © 2000~2008 Integrated Systems Solution Corporation Revision1.0 Page 14 創傑科技股份有限公司 Integrated System Solution Corp. www.issc.com.tw Bluetooth Single Chip v2.0 w/ EDR IS1610N Figure 4 –Data format for EDR Access Code Header GuardSyncPayload Trailer For this modulation, each symbol carries 2 bits of information. For its constellation diagram, although there are 8 possible phase states, the encoding scheme guarantees the trajectory of the modulation between symbols is restricted to 4 states. For a given starting point, every phase change between symbols is restricted to +45°, +135°, -45°, and -135°. Figure 5 –Phase shift & bit pattern for 2 MHz data rate Phase Shift Bit Pattern +45° (+π/4) 00 +135° (+3π/4) 01 -135°(-3π/4) 11 -45°(-π/4) 10 For this modulation, each symbol carries 3 bits of information. For its cons…

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No. Name Specification Qt y. Posizition Memo 1 PCB Board H320-05 1 1.1 Chip Capacitor 1uF±20% 6.3V 10 C17、C18、C19、C22、C24、 C13、C1、C14、C3、C2 0402 1.2 Chip Capacitor 0.1uF±20%16V 2 C16、C11 0402 1.3 Chip Capacitor 330nF±20%16V 2 C20、C21 0402 1.4 Chip Capacitor 10uF±20% 10V 2 C2A、C23 0805 1.5 Chip Capacitor 4.7uF±20% 10V 1 C4 0603 1.7 Chip Capacitor 1.5pF±5% 50V 1 C10 0402 1.8 Chip Capacitor 5pF±5% 50V 1 C9 0402 1.9 Chip Capacitor 15PF±5% 50V 2 C15、C12 0402 1.10 Chip Resistance 0Ω±5% 2 R11B2、R14B 0402 1.11 Chip Resistance 2.2Ω±5% 1 R6A 0603 1.12 Chip Resistance 4.7K±5% 2 R11、R21 0402 1.13 Chip Resistance 3.3K±5% 3 R6、R7、R12 0402 1.14 Chip Resistance 18K±1% 1 R3 0402 1.15 Chip Resistance 47K±5% 1 R10 0402 1.16 Chip Resistance 1K±5% 6 R4 、R15、 R16、R17、R14、 R1 0402 1.17 Chip Resistance 10K±5% 2 R5、R18 0402 1.18 Chip Resistance 20K±5% 1 R22 0402 1.19 Chip Resistance 2.4K±5% 2 R13、R2 0402 1.20 Chip Resistance 330Ω±5% 2 R8、R9 0402 1.21 Chip Inductance 2.2nH±5% S 1 L1、 0402 1.22 Chip Inductance 3.3nH±5% S 1 C6 0402 1.23 Chip LED 蓝色 1 D4 0603 1.24 Chip LED 红色 1 D3 0603 1.25 Chip Dynatron AF2301P 1 Q2 SOT23 1.26 Chip Dynatron MMBT3904 1 Q1 SOT23 1.27 Chip Diode CDSH3-222N 1 D1 SOT-523 1.28 Chip Diode CDB400B 2 D2、D5 0603 1.29 Chip IC XC6204B282MR 1 U2 SOT23-5 1.30 Chip IC 9016 1 U1 SOT23-5 1.31 Chip IC IS1610N 1 U3 QFN56 1.32 Switch AT24C08 1 U4 SSOP-8 1.33 轻触开关 5×5 1 SW1 1.34 Chip Oscillator 16MHz±10PPM 12PF 1 X1 5032 1.35 Switch 2 SW2 SW3 1.36 PCB Board H320-05 1 版本号 修改状态 数 量 更改单号 签 名 日 期 修改标记 数量 更改单号 签 名日 期 拟 制 审 核 LH068WL 等级 标记 第 1 张 共 2 张 批 准 H320-05(PCB) BOM

RF EXPOSURE EVALUATION - FCC ID: VO8BH-320 Limit According to §1.1307(b)(1), systems operating under the provisions of this section shall be operated in a manner that ensures that the public is not exposed to radio frequency energy level in excess of the Commission’s guidelines. According to §1.1310 and §2.1091 RF exposure is calculated. Limits for Maximum Permissible Exposure (MPE) Frequency Range (MHz) Electric Field Strength (V/m) Magnetic Field Strength (A/m) Power Density (mW/cm 2 ) Averaging Time (Minute) Limits for Occupational / Controlled Exposure 0.3 – 3.0 614 1.63 (100)* 6 3.0 – 30 1842/f 4.89/f (900/f)* 6 30 – 300 61.4 0.163 1.0 6 300 – 1500 / / f/300 6 1500 – 100 000 / / 5 6 Frequency Range (MHz) Electric Field Strength (V/m) Magnetic Field Strength (A/m) Power Density (mW/cm 2 ) Averaging Time (Minute) Limits for General population / Uncontrolled Exposure 0.3 – 3.0 614 1.63 (100)* 30 3.0 – 30 842/f 2.19/f (180/f)* 30 30 – 300 27.5 0.073 0.2 30 300 – 1500 / / f/1500 30 1500 – 100 000 / / 1.0 30 F = Frequency in MHz * = Plane-wave equivalent power density Test Data Predication of MPE limit at a given distance Equation from page 18 of OET Bulletin 65, Edition 97-01 S=PG/4πR² Where: S=power density P=power input to antenna G=power gain of the antenna in the direction of interest relative to an isotropic radiator R=distance to the center of radiation of the antenna Maximum peak output power: -6.19 (dBm) Maximum peak output power: 0.240(mW) Prediction distance: 1 (cm) Predication frequency: 2.480(GHz) Duty Cycle: 0.332 Power density at predication frequency at 1 cm: 0.058 (mW/cm²) MPE limit for controlled exposure at prediction frequency: 5.0 (mW/cm²) MPE limit for uncontrolled exposure at prediction frequency: 1.0 (mW/cm²) Test Result: Pass

123456 A B C D 654321 D C B A Title NumberRevisionSize C Date:14-Mar-2007Sheet of File:F:\功放\Wireless speaker\Wireless speaker\h320-05.DDBDrawn By: CHG_state DC_in DC_in P2_0 PWR_en P W R _ e n CHG_state 1 2 R41K C11 0.1uF 12 R8 330 12 R18 NP-0402 AK D3 LED1-HR AK D4 LED0-SB 1 ANT1 1 2 R2 2K4 C1515pF 12 R16 1K C131uF TP8 12 R9 330 SW1 Switch 1 2 R73K3 TP5 12 R1 1K 12 R14 OR TP7 TP12 1 2 R5 100K C3 1uF C22 1uF 1 2 3 P1 DC-057D 1 2 R11 4K7 1 2 L1 2.2nH C E B Q1 MMBT3904 TP1 C2 1uF 12 R15 1K C16 0.1uF 3 2 1 D1 CDST-70 TP2 1 2 R13 2K4 C1 1uF C141uF C10 1.5pF C2310uF 12 R12 3K3 C17 1uF IS1610N QFN56 VOLup 1 PWRen 2 VDD_IO 3 MFB 4 VOLdown 5 GND 6 HCI_RXD 7 HCI_TXD 8 NC 9 SCL 10 SDA 11 VDD_core 12 NC 13 BAT_in 14 A V D D _ S A R 1 5 A V D D _ A D C 1 6 A G N D _ A D C 1 7 L i n e _ i n + 1 8 L i n e _ i n - 1 9 B G _ R 2 0 B G _ R E F 2 1 L i n e _ o u t + 2 2 L i n e _ o u t - 2 3 A G N D _ D A C 2 4 A V D D _ D A C 2 5 L D O _ o u t 2 6 L D O _ e n 2 7 L D O _ i n 2 8 SCO 29 VDD_core 30 TEST 31 PWM 32 GND 33 VDD_IO 34 PWR 35 DC_in 36 EAN 37 VCC_dig 38 DIG18 39 XO_P 40 XO_N 41 PLL_18 42 V C C _ R F 4 3 R F _ T P 4 4 R F _ T P 4 5 R X 4 6 R T X 4 7 N C 4 8 N C 4 9 N C 5 0 N C 5 1 N C 5 2 N C 5 3 L E D 1 5 4 L E D 0 5 5 C H G s t a t e 5 6 G N D 5 7 U3 IS1610N-QFN56 TP10 12 D2 CDSU400B C9 5pF VIN 1 EN 3 BP 4 VOUT 5 GND 2 U2 RT9193-27PB TP9 A0 1 A1 2 A2 3 GND 4 SDA 5 SCL 6 WP 7 VCC 8 U4 HT24LC08 12 R17 1K C5 0.01uF 1 2 R3 18K/1% TP4 CHRG 1 GND 2 BAT 3 VCC 4 PROG 5 U1 EUP8054 TP11 C18 1uF C8 * C20 1uF TP6 C19 1uF TP3 41 32 X1 X4P-16MHZ-1 12 R10 47K C7 C4 1uF C1215pF 12 C6 2.2nH 1 2 R6 3K3 C21 1uF 1V8 GND 2V7 GND 1V8 GND 1V8 GND 2V7 GND 1V8 GND GND 1V8 GNDGND 2V7 2V7 GND GND 2V7 2V7 GND GND GND GND GND GND GND GND VBAT 5V 2V7 1V8 VBAT GND GND GND GND 2V7 2V7 GND 5V VBAT 2V7 MIC SPK 5V POWER EEPROM BATTERY BAT+ BAT- HCI TP1 TP2 TP3 TP4 TP5 TP8 TP9 TP10 TP11 TP12TP6 TP7VBAT 5V VBAT_en GND RF RXD TXD T_M(P2_0) SPK+ SPK- MIC+ MIC- 12 R6a 2R2 GND GND GND GND GND GND GND GND GND 12 R14a 0R 1 2 R14b 1K 2V7 TP13 SW3 SW3 SW2 SW2 12 R11A 4K7 2V7 12 R11B 4K7 GND 12 R20 0 GND H320RF Q? MOSFET N D? DIODE 1 2 R2 4.7K 12 R6 10K GND PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn

FCC Part 15 TEST REPORT For Bluetooth Headset (Class 2) Model Name: BH-320 FCC ID: VO8BH-320 Report No.: GZAGC132080301E6 Date of Issue: Apr.01, 2008 Prepared For GuangZhou LIWEI Electronics Co., Ltd. No.33, Zhenzhongbei Road, Shenshan Industrial Park, Baiyun District, Guangzhou 510460, P.R. China Tel: 86-020 8606 2626 Fax: 86-020 8606 2626 Prepared By Shenzhen Attestation of Global Compliance Science & Technology Co., Ltd. Suite B11/B12, 4F, Huafeng Mall, Chuangye 2 nd Road, 25 District, Bao’an, Shenzhen Tel: 86-755-2974 2358 Fax: 86-755-2600 8484 Report No.:GZAGC132080301E6 Page 1 of 39 VERIFICATION OF COMPLIANCE Applicant: GuangZhou LIWEI Electronics Co., Ltd. Manufacturer GuangZhou LIWEI Electronics Co., Ltd. Product Description: Bluetooth Headset (Class 2) Brand Name: Bluedio Model Number: BH-320 FCC ID VO8BH-320 Report Number: GZAGC132080301E6 Date of Test: Mar.25, 2008-Apr.01, 2008 WE HEREBY CERTIFY THAT: The above equipment was tested by Shenzhen Attestation of Global Compliance Science & Technology Co., Ltd. The test data, data evaluation, test procedures, and equipment configurations shown in this report were made in accordance with the procedures given in ANSI C63.4 (2003) and the energy emitted by the sample EUT tested as described in this report is in compliance with radiated emission limits of FCC Rules Part 15.247. Tested By: Tony Tian Apr.01, 2008 Checked By: Randy He Apr.01, 2008 Authorized By King Zhang Apr.01, 2008 Report No.:GZAGC132080301E6 Page 2 of 39 TABLE OF CONTENTS 1. GENERAL INFORMATION ...................................................................................................................... 4 1.1 PRODUCT DESCRIPTION............................................................................................................ 4 1.2 RELATED SUBMITTAL(S) / GRANT (S) ....................................................................................... 4 1.3 TEST METHODOLOGY ................................................................................................................ 4 1.4 TEST FACILITY ............................................................................................................................. 4 1.5 SPECIAL ACCESSORIES............................................................................................................. 4 1.6 EQUIPMENT MODIFICATIONS ....................................................................................................4 2. SYSTEM TEST CONFIGURATION ......................................................................................................... 5 2.1 CONFIGURATION OF TESTED SYSTEM .................................................................................... 5 2.2 EQUIPMENT USED IN TESTED SYSTEM ................................................................................... 5 3. SUMMARY OF TEST RESULTS ............................................................................................................. 6 4. DESCRIPTION OF TEST MODES........................................................................................................... 6 5. CONDUCTION EMISSIONS .................................................................................................................... 7 5.1 MEASUREMENT PROCEDURE: .................................................................................................. 7 5.2 TEST SET-UP (BLOCK DIAGRAM OF CONFIGURATION) ......................................................... 7 5.3 MEASUREMENT EQUIPMENT USED:......................................................................................... 7 5.4 LIMITS AND MEASUREMENT RESULT:...................................................................................... 8 6. MAXIMUM OUTPUT POWER.................................................................................................................. 9 6.1 MEASUREMENT PROCEDURE: .................................................................................................. 9 6.2 TEST SET-UP (BLOCK DIAGRAM OF CONFIGURATION) ......................................................... 9 6.3 MEASUREMENT EQUIPMENT USED:....................................................................................... 11 6.4 LIMITS AND MEASUREMENT RESULT:.................................................................................... 12 7. 20 DB BANDWIDTH .............................................................................................................................. 14 7.1 MEASUREMENT PROCEDURE .................................................................................................14 7.2 TEST SET-UP (BLOCK DIAGRAM OF CONFIGURATION) .......................................................14 7.3 MEASUREMENT EQUIPMENT USED:....................................................................................... 14 7.4 LIMITS AND MEASUREMENT RESULTS: ................................................................................. 14 8. MAXIMUM CONDUCTED OUTPUT POWER SPECTRAL DENSITY ................................................... 16 8.1 MEASUREMENT PROCEDURE: ................................................................................................ 16 8.2 TEST SET-UP (BLOCK DIAGRAM OF CONFIGURATION) .......................................................16 8.3 MEASUREMENT EQUIPMENT USED:....................................................................................... 16 8.4 LIMITS AND MEASUREMENT RESULT:.................................................................................... 16 9. OUT OF BAND EMISSION .................................................................................................................... 19 9.1 MEASUREMENT PROCEDURE: ................................................................................................ 19 9.2 TEST SET-UP (BLOCK DIAGRAM OF CONFIGURATION) .......................................................19 9.3 MEASUREMENT EQUIPMENT USED:........…

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RADIATED EMISSION TEST SETUP – TRANSMITTING RADIATED EMISSION TEST SETUP – CHARGING CONDUCTED EMISSION TEST – CHARGING