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UDV-201314GSM/GPRS(850/900/1800/1900MHz)+BT Wireless Data Module

Shanghai Simcom Ltd.
GSM/GPRS(850/900/1800/1900MHz)+BT Wireless Data Module - FCC ID UDV-201314 - Shanghai Simcom Ltd.
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Application Details

Equipment Class
DSS - Part 15 Spread Spectrum Transmitter
Date of Grant
Jan 22, 2014
Application Purpose
Original Equipment
Date of Application
Jan 20, 2014
Equipment Note
GSM/GPRS(850/900/1800/1900MHz)+BT Wireless Data Module
Frequency Range
2402.00000000 - 2480.00000000
Company
Shanghai Simcom Ltd.
Country
China

Documents & Files

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Users Manual

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Attestation Statements

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Cover Letter(s)

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External Photos

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ID Label/Location Info

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Internal Photos

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Test Report

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Test Setup Photos

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Document Text

Text extracted from the exhibit documents filed with the FCC. Open a document above to read the original.

Users Manual

SIM800 Document - 1 - SIM800 User Manual 1. SIM800 Description 1.1. Summarize SIM800 designed by SIMCom is a quad band module which supports GSM/GPRS. The baseband circuit is based on MTK and RF circuit is based on RFMD. It works at quad bands------GSM850, EGSM900, DCS1800, and PCS1900. CPU clock is based on 26MHz crystal. The main IC includes MT6260D and RF7196. 1.2. Feature ● Quad-Band 850/900/1800/1900MHz ● GPRS multi-slot class 12 ● GPRS mobile station class B ● Bluetooth output power class 1 ● Bluetooth v3.0 with data rates 3.0Mbps ● Compliant to GSM phase 2/2+ – Class 4 (2 W @ 850/900 MHz) – Class 1 (1 W @ 1800/1900MHz) ● Dimensions: 24*24*3 mm ● Weight: 3.14 g ● Control via AT commands (3GPP TS 27.007, 27.005 and SIMCom enhanced AT Commands) ● Supply voltage range 3.6~4.2 V ● Low power consumption ● Operation temperature:-30~80°C ● 68 SMT pads include – Interface to external SIM 3V/1.8V – Analog audio interface – RTC backup – Serial interface – USB interface – Keypad interface – LCD interface – Antenna pad – PCM – GPIO – ADC SIM800 Document - 2 - 1.3. Pin COL1/GPIO9 ROW1/GPIO4 ROW2/GPIO3 ROW3/GPIO2 ROW4/GPIO1 GND SCL COL0/GPIO10 PCM_CLK GND 6867665257 51 59 3 4 ROW0/GPIO5 GND GND COL4/GPIO6 COL3/GPIO7 COL2/GPIO8 46 45 9 10 11 12 13 14 15 16 RTS 5 6 7 8 5865646362 17 PWRKEY GND DTR RI DCD PCM_OUT CTS 1 250 49 48 47 44 43 42 41 40 39 38 37 36 35 1819202122232425262728293031323334 TXD RXD GPIO17 PCM_IN GPIO19 PCM_SYNC VDD_EXT RESET GND MIC_P MIC_N SPK_P SPK_N KPLED VBUS ADC VRTC USB_DP USB_DM GND SIM_VDD SIM_DATA SIM_CLK SIM_RST SIM_PRESENCE SDA PWM2/GPIO23 PWM1/GPIO22 RF_SYNCSTATUSGNDGNDGNDGNDGNDRF_ANTNETLIGHTGNDGNDVBATVBAT SIM800 (顶视图) VBATGNDANT_BT 535655546160 SIM800 Document - 3 - 1.4. Picture Figure 1: Top and Bottom view of SIM800 SIM800 Document - 4 - 1.5. Dimension Figure 2: Dimention SIM800 Document - 5 - 2. Detail Block Diagram Analog base band Digital base band Power management unit Radio Frequency Power supply Analog Interface Digital Interface UART SIM GPIOs RTC Audio ADC RF BT FM USB KEY PCM、SPI、SD 26M Crystal 32K Crystal Figure 3: Block diagram of SIM800 3. Electrical and Reliability Characteristics 3.1. Absolute Maximum Ratings The absolute maximum ratings stated in following table are stress ratings under non-operating conditions. Stresses beyond any of these limits will cause permanent damage to SIM800. Table 1: Absolute maximum ratings Symbol Parameter Min Typ Max Unit VBAT Power supply voltage - - 4.5 V VBUS - - 30 V VBUS I I * Input current - - 8 mA I O * Output current - - 8 mA * These parameters are for digital interface pins, such as keypad, GPIO, I 2 C, UART, LCD and DEBUG. 3.2. Digital Interface Characteristics Table 2: Digital interface characteristics Symbol Parameter Min Typ Max Unit SIM800 Document - 6 - I IH High-level input current 2.1 - 3.1 V I IL Low-level input current -0.3 - 0.7 V V OH High-level input voltage 2.4 - - V V OL Low-level input voltage - - 0.4 V * These parameters are for digital interface pins, such as keypad, GPIO, I 2 C, UART, LCD, PWMs and DEBUG. 3.3. SIM Card Interface Characteristics Table 3: SIM card interface characteristics Symbol Parameter Min Typ Max Unit I IH High-level input current -1 - 1 uA I IL Low-level input current -1 - 1 uA V IH High-level input voltage 1.4 - - V 2.4 - - V V IL Low-level input voltage - - 0.27 V 0.4 V V OH High-level output voltage 1.62 - - V 2.7 - - V V OL Low-level output voltage - - 0.36 V - - 0.4 V 3.4. SIM_VDD Characteristics Table 4: SIM_VDD characteristics Symbol Parameter Min Typ Max Unit V O Output voltage 2.70 2.80 2.90 V I O Output current - - 50 mA 3.5. VRTC Characteristics Table 5: VRTC characteristics Symbol Parameter Min Typ Max Unit V RTC-IN VRTC input voltage 2.8 V I RTC-IN VRTC input current - 3 - uA V RTC-OUT VRTC output voltage - 2.8 - V I RTC-OUT VRTC output current - 2 mA SIM800 Document - 7 - 3.6. Current Consumption (VBAT = 3.8V) Table 6: Current consumption Symbol Parameter Conditions Value Unit I VRTC VRTC current VBAT disconnects. Backup battery is 3 V 2 uA I VBAT VBAT current Power down mode 50 uA Sleep mode BS-PA-MFRMS=9 1.0 mA BS-PA-MFRMS=5 1.2 BS-PA-MFRMS=2 1.8 Idle mode GSM 850 19 mA EGSM 900 DCS 1800 PCS 1900 Voice call GSM 850 EGSM 900 PCL=5 250 mA PCL=12 110 PCL=19 76 DCS 1800 PCS 1900 PCL=0 168 PCL=7 89 PCL=15 76 Data mode GPRS(1Rx,1Tx) GSM 850 EGSM 900 PCL=5 240 mA PCL=12 110 PCL=19 83 DCS 1800 PCS 1900 PCL=0 170 mA PCL=7 95 PCL=15 80 Data mode GPRS(4Rx,1Tx) GSM 850 EGSM 900 PCL=5 270 mA PCL=12 150 PCL=19 120 DCS 1800 PCS 1900 PCL=0 205 mA PCL=7 130 PCL=15 115 Data mode GPRS(3Rx,2Tx) GSM 850 EGSM 900 PCL=5 440 mA PCL=12 185 PCL=19 130 DCS 1800 PCS 1900 PCL=0 300 mA PCL=7 155 PCL=15 122 SIM800 Document - 8 - I VBAT-peak Peak current During Tx burst 2 A 3.7. Electro-Static Discharge SIM800 is an ESD sensitive component, so more attention should be paid to the procedure of handling and packaging. The ESD test results are shown in the following table. Table 7: The ESD characteristics (Temperature: 25°C, Humidity: 45 %) Pin Contact discharge Air discharge VBAT ±6KV ±12KV GND ±6KV ±12KV RXD, TXD ±2KV ±8KV Antenna port ±5KV ±10KV SPK_P/SPK_N/MIC_P/MIC_N ±2KV ±5KV PWRKEY ±2KV ±8KV 4. Radio Characteristics 4.1. Module RF Output Power The following table shows the module conducted output power, it is followed by the 3GPP TS 05.05 technical specification requirement. Table 8: SIM800 GSM 900 and GSM 850 conducted RF output power GSM850、EGSM900 PCL Nominal output power (dBm) Tolerance (dB) for conditions Normal Extreme 5 33 ±2 ±2.5 6 31 ±3 ±4 7 29 ±3 ±4 8 27 ±3 ±4 9 25 ±3 ±4 10 23 ±3 ±4 11 21 ±3 ±4 12 19 ±3 ±4 13 17 ±3 ±4 SIM800 Document - 9 - 14 15 ±3 ±4 15 13 ±3 ±4 16 11 ±5 ±6 17 9 ±5 ±6 18 7 ±5 ±6 19-31 5 ±5 ±6 Table 9: SIM800 DCS 1800 and PCS 1900 conducted RF output power DCS1800、PCS1900 PCL Nominal output power (dBm) Tolerance (dB) for conditions Normal Extreme 0 30 ±1 ±1.5 1 28 ±2 ±3 2 26 ±3 ±4 3 24 ±3 ±4 4 22 ±3 ±4 5 20 ±3 ±4 6 18 ±3 ±4 7 16 ±3 ±4 8 14 ±3 ±4 9 12 ±4 …

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Attestation Statements

SHENZHEN HORNCOM ELECTRONIC TECH CO;LTD. Confirmation Contract of product Model of product:WT-C&G-28-90 Name of product:Vehicular Antenna Date:2005-8-29 Model WT-C&G-28-90 Main Technical Specifications Frequency Range (MHz) 824 ~ 960 1710 ~ 1990 VSWR ≤1.5 (900MHz) ≤2 (1800MHz) Gain (dBi) 3 Max Input Power (W) 50 Input Impedance (Ω) 50 Polarization Type Vertical Length (mm) 90 Connector Type SMA Exploration department Department of inspect quantity Operation department Confirmation of manufacture ADD:5F,2Buiding,Changguang lndustry Zone,AoBei 2cun,Henggang Town, Longgang Area, Shenzhen E-Mail: [email protected] Web : http://www.horncomtech.com Tel : 0755-81926992 28620720 Fax: 0755-28620830 VSWR : LOG MAG: SMITH CHART:

External Photos

External photo:

ID Label/Location Info

SIM800 Document - 1 - SIM800 ID Label 21cm 21cm

Internal Photos

Internal photo

Test Report

Report No.2013BT02092 Page 2 of 77 CONTENTS 1. GENERAL INFORMATION .................................................................................... 3 1.1 N OTES ..................................................................................................................... 3 1.2 S TATEMENTS ............................................................................................................ 3 1.3 T ESTING LABORATORY INFORMATION ........................................................................ 4 1.3.1. Testing Location ............................................................................................... 4 1.3.2. Testing Environment ........................................................................................ 4 1.3.3. Project data ....................................................................................................... 4 1.3.4. Signature ........................................................................................................... 4 1.4 D ETAILS OF APPLICANT OR MANUFACTURER .............................................................. 6 1.4.1. Applicant Information ....................................................................................... 6 1.4.2. Manufacturer Information ................................................................................ 6 2. EQUIPMENT UNDER TEST (EUT) AND ANCILLARY EQUIPMENT (AE) ........... 6 2.1. ABOUT EUT .......................................................................................................... 6 2.2. INTERNAL IDENTIFICATION OF EUT USED DURING THE TEST ...................... 6 2.3. INTERNAL IDENTIFICATION OF AE USED DURING THE TEST ........................ 6 3. REFERENCE DOCUMENTS ................................................................................. 7 3.1. REFERENCE DOCUMENTS FOR TESTING ........................................................ 7 4. SUMMARY OF TEST RESULTS ........................................................................... 8 5. TEST RESULT ..................................................................................................... 10 5.1. PEAK OUTPUT POWER-CONDUCTED ............................................................. 10 5.2. FREQUENCY BAND EDGES-CONDUCTED ...................................................... 15 5.3. CONDUCTED EMISSION .................................................................................... 22 5.4. RADIATED EMISSION ......................................................................................... 32 5.5. TIME OF OCCUPANCY (DWELL TIME) ............................................................. 48 5.6. 20DB BANDWIDTH ............................................................................................. 58 5.7. CARRIER FREQUENCY SEPARATION .............................................................. 63 5.8. NUMBER OF HOPPING CHANNELS ................................................................. 65 5.9. AC POWERLINE CONDUCTED EMISSION ....................................................... 68 6. TEST EQUIPMENTS AND ANCILLARIES USED FOR TESTS .......................... 73 7. TEST ENVIRONMENT ......................................................................................... 75 ANNEX A DEVIATIONS FROM PRESCRIBED TEST METHODS ................................. 77 Report No.2013BT02092 Page 3 of 77 1. General Information 1.1 Notes All reported tests were carried out on a sample equipment to demonstrate limited compliance with the section 3. The test results of this test report relate exclusively to the item(s) tested as specified in section 5. The following deviation from, additions to, or exclusions from the test specifications have been made. See section 3. 1.2 Statements The product SIM800 , supporting BT, manufactured by Shenyang Simcom Technology Ltd. is a new product for testing. ECIT has verified that the compliance of the tested device specified in section 5 of this test report is successfully evaluated according to the procedure and test methods as defined in type certification requirement listed in section 5 of this test report. Report No.2013BT02092 Page 4 of 77 1.3 Testing Laboratory information 1.3.1. Testing Location Company Name: ECIT Shanghai, East China Institute of Telecommunications Address: 7F, G Area,No. 668, Beijing East Road, Huangpu District, Shanghai, P. R. China Postal Code: 200001 Telephone: 86-21-63843300 Fax: 86-21-63843301 FCC Registration NO.: 489729 1.3.2. Testing Environment Normal Temperature: 15-35°C Extreme Temperature: N/A Relative Humidity: 20-75% 1.3.3. Project data Project Leader: Gong Yujuan Testing Start Date: Dec 24,2013 Testing End Date: Jan 09,2014 1.3.4. Signature Report No.2013BT02092 Page 5 of 77 Report No.2013BT02092 Page 6 of 77 1.4 Details of applicant or manufacturer 1.4.1. Applicant Information Company Name: Shanghai SIMCom Wireless Solutions Co.,Ltd. Address /Post: Building A,SIM Technology Building,No.633,Jinzhong Road,Changning District,Shanghai R.R.China Country: China 1.4.2. Manufacturer Information Company Name: Shenyang Simcom Technology Ltd. Address /Post: No.37, Shenbei Rd, Shenbei New Aear, Shenyang,P.R.China Country: China 2. Equipment Under Test (EUT) and Ancillary Equipment (AE) 2.1. About EUT EUT Description GSM/GPRS(850/900/1800/1900MHz)+BT Wireless Data Module Model name SIM800 Bluetooth Frequency 2402MHz-2480MHz Bluetooth Channel Channel0-Channel78 Bluetooth Modulation GMSK;π/4 DQPSK;8DPSK Extreme Temperature N/A Nominal Voltage 3.8V Extreme High Voltage 4.2V Extreme Low Voltage 3.6V Note: Photographs of EUT are shown in ANNEX A of this test report. 2.2. Internal Identification of EUT used during the test EUT ID* SN or IMEI HW Version SW Version Date of receipt N11 862951020007549 V2.01 SIM800 R13.08 2013-12-24 *EUT ID: is used to identify the test sample in the lab internally. 2.3. Internal Identification of AE used during the test AE ID* Description SN AE1 RF cable --- AE2 --- --- R…

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Test Setup Photos

FCC Part 22H/Part 15C-Test Photograph Description: ERP Test Setup Description: Substitution Antenna for ERP Test Description: EIRP Test Setup Description: Substitution Antenna for EIRP Test

Contact Information

Applicant

yongsheng Li(Deputy General Manager)
[email protected]+86 21 32523134Fax: +86-21-32533020

Technical Contact

East china institute of TelecommunicationsLiu Jianquan
[email protected]86-21-63843300

7F, G Area,No. 668, Beijing East Road, · Shanghai · China

Test Firm

East China Institute of TelecommunicationsJing Li
[email protected]862-163-8433

Technical Specifications

#Rule PartsFrequency RangePower Output
115C2.40 GHz - 2.48 GHz5.00 mW
Modular Type
Single Modular Approval
Confidentiality
Long Term
Grant Notes
Single Modular Approval. Power Output listed is conducted. End-users and installers must be provided with antenna installation instructions and transmitter operating conditions for satisfying RF exposure compliance. This device contains GSM transmitter.

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