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X3ZBTMOD6Spread Spectrum Transmitter

Amp'ed RF Technology
Spread Spectrum Transmitter - FCC ID X3ZBTMOD6 - Amp'ed RF Technology
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Application Details

Equipment Class
DSS - Part 15 Spread Spectrum Transmitter
Date of Grant
Dec 30, 2012
Application Purpose
Original Equipment
Date of Application
Dec 29, 2012
Equipment Note
Spread Spectrum Transmitter
Frequency Range
2402.00000000 - 2480.00000000
Company
Amp'ed RF Technology
Country
United States

Documents & Files

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Users Manual

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Cover Letter(s)

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External Photos

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ID Label/Location Info

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Internal Photos

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RF Exposure Info

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Test Report

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Test Setup Photos

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Document Text

Text extracted from the exhibit documents filed with the FCC. Open a document above to read the original.

Users Manual

BT24 Datasheet Amp’ed RF Technology, Inc. Nov 11, 2012 BT24 Product Specification 15mm x 20mm Description Amp’ed RF Technology presents our BT24 Bluetooth module, low cost series. For applications requiring basic Bluetooth functionality, the BT24-LT is one of the most cost effective modules available. With support for both SPP and Apple IAP profiles, it can work with almost any mobile device or smart phone on the market, to quickly bring your wireless applications to market. The BT24-AUD module adds extra processing support for high-fidelity stereo audio applications. The BT24 includes an integrated antenna, 13 GPIOs, SPI, I2C, PCM, DAC and A/D lines. Our standard abSerial and Amp’edUP Stack Lite are pre-flashed into the integrated flash memory. Customized firmware for peripheral device interaction, power optimization, security, and other proprietary features may be supported and can be ordered pre-loaded and configured. BT24 Features Bluetooth features  Bluetooth qualified module  Bluetooth v2.1+EDR  Class 2 radio  Range up to 60m LOS  400Kbps data throughput  128-bit encryption security Hardware configuration  Cortex-M3 microprocessor up to 72MHz  128K/256K bytes Flash memory  16K/48K bytes RAM memory  UART, up to 921K baud  SPI and I2C interfaces  13 general purpose I/O  PCM audio interface  4 x12-bit A/D inputs  2 DAC output (BT24-AUD only)  1 LPO input Embedded software  Amp’edUP Bluetooth stack (SPP, IAP, A2DP, HID, HFP, OBEX)  Support Apple iOS/MFI Bluetooth devices  abSerial, AT command set  BlueGuard, data encryption software (Optional)  Mobile application software (Optional) Additional documentation  abSerial User Guide  abSerial Reference Guide  abSerial Configuration Guide Phone: +1 408 213-9530 | Fax: 408-213-9533 | E-mail: [email protected] Address : 1879 Lundy Ave, ste. 138, San Jose, CA 95131 电话:+86 022-83945100 | 传真:+86 022-83945100 转 111 | E-mail: [email protected] 地址:天津市华苑产业区海泰西路 18 号西 3B-202(300384) Phone: +1 408 213-9530 | Fax: 408-213-9533 | E-mail: [email protected] Address : 1879 Lundy Ave, ste. 138, San Jose, CA 95131 电话:+86 022-83945100 | 传真:+86 022-83945100 转 111 | E-mail: [email protected] 地址:天津市华苑产业区海泰西路 18 号西 3B-202(300384) 3 Table of Contents 1 Software Architecture................................................................................................................................................ 4 1.1 Lower Layer Stack ..................................................................................................................................................... 4 1.2 Upper Layer Stack: Amp’ed UP Lite .......................................................................................................................... 4 1.3 HCI Interface .............................................................................................................................................................. 4 1.4 AT Command Set: abSerial ....................................................................................................................................... 4 2 Hardware Specifications ........................................................................................................................................... 5 2.1 Recommended Operating Conditions ........................................................................................................................ 5 2.2 Absolute Maximum Ratings ....................................................................................................................................... 5 2.3 Current Consumption ................................................................................................................................................. 5 2.4 Selected RF Characteristics....................................................................................................................................... 5 Basic Data Rate .................................................................................................................................................................. 5 2.5 I/O Operating Characteristics..................................................................................................................................... 6 2.6 Pin Assignment .......................................................................................................................................................... 7 2.7 Layout Drawing .......................................................................................................................................................... 8 3 Module Block Diagram .............................................................................................................................................. 9 4 Hardware Design ...................................................................................................................................................... 9 4.1 Module Reflow Installation ......................................................................................................................................... 9 4.2 GPIO Interface ......................................................................................................................................................... 10 4.3 UART Interface ........................................................................................................................................................ 10 4.4 PCB Layout Guidelines ............................................................................................................................................ 11 4.5 Reset Circuit............................................................................................................................................................. 11 4.5.1 External Reset Circuit: ......................................................................................................................…

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Cover Letter(s)

Amp'ed RF Technology,Inc. Date: December 7, 2012 To: Federal Communications Commission, Authorization & Evaluation Division, 7435 Oakland Mills Road, Columbia, MD 21046 Re: Amp'ed RF Technology,Inc. FCC ID: X3ZBTMOD6 FCC Part 15C Certification Confidentiality Request Gentlemen: This letter is to comply with 47 CFR 0.457 and 0.459 pertaining to confidentiality material. Amp'ed RF Technology,Inc. requests that the following documents regarding this submission for FCC ID: X3ZBTMOD6 be kept confidential: Exhibit Type File Name Block Diagram Block Diagram.pdf Schematics Circuit Diagram.pdf Operational Description Operational Description.pdf Part list BOM.pdf Tune-Up-Procedure Tune up procedure.pdf Those documents contain detailed system and equipment description and related information about the product which Amp'ed RF Technology,Inc. considers to be confidential proprietary, a custom design and, otherwise, not releasable to the general public. Since this design is a basis form which future technological products will evolve, Amp'ed RF Technology,Inc. considers this information would be of benefit to its competitors, and that the disclosure of the information in these documents would give competitors an unfair advantage in the market. Yours Sincerely, Name :Kelly Simone Title :General Manager Company:Amp'ed RF Technology,Inc.

Cover Letter(s)

Part Number: BT24 FCC ID: X3ZBTMOD6 Request for Modular Approval 11.12.2012 In accordance with FCC Part 15, we, Amp’ed RF Technology Inc, hereby request a modular level approval as outlined in FCC document DA 00 – 1407, for the device listed above. In support of the Limited Modular Transmitter Approval, the following is stated: 1) The module does have buffered modulation / data inputs. 2) The module does regulate its own power supply. 3) The module does have a permanently attached antenna. 4) The module can be tested as a stand-alone device. 5) The module is labeled with the proper FCC ID, and labeling instructions are provided to OEM end users for external product labels. 6) The module does have instruction for proper use. 7) The module does meet the FCC RF regulations. Limited Modular Transmitter Approval, is requested, instead of Modular Transmitter Approval, because the following condition is not met: 1) The module does not have its own RF shielding. Signature: Kelly Simone General Manager Amp’ed RF Technology Inc. 1879 Lundy Ave, Suite 138, San Jose, CA 95131

Cover Letter(s)

Amp'ed RF Technology,Inc. Date: December 7, 2012 To: Federal Communications Commission, Authorization & Evaluation Division, 7435 Oakland Mills Road, Columbia, MD 21046 To Whom It May Concern: The Amp'ed RF Technology,Inc., the undersigned, hereby authorizes Mr. Jesse Huang of TÜV Rheinland Shanghai Co., Ltd, to act on the behalf of the Amp'ed RF Technology,Inc. solely in matters relating to the application for an FCC equipment authorization for FCC ID: X3ZBTMOD6 including the signing of documents in connection with this Application. Necessary acts carried out by Amp'ed RF Technology,Inc. on our behalf of the Amp'ed RF Technology,Inc. in connection with the Application shall have the same effect as acts of the Amp'ed RF Technology,Inc.. The Amp'ed RF Technology,Inc. also hereby certify that no party to this application is subject to a denial of benefits, including FCC benefits, pursuant to Section 5301 of the Anti-Drug Abuse Act of 1988, 21 U.S.C. 853(a). Thank you for your attention to this matter. Yours Sincerely, Name :Kelly Simone Title:General Manager Company:Amp'ed RF Technology,Inc.

External Photos

Prüfbericht - Nr.: Test Report No.: 15057486 001 1. Photographs of EUT Photograph 1: Prüfbericht - Nr.: Test Report No.: 15057486 001 Photograph 2: Prüfbericht - Nr.: Test Report No.: 15057486 001 Host Photograph 3 : Host without the module installed Host with the module installed Prüfbericht - Nr.: Test Report No.: 15057486 001 Backside of Host

ID Label/Location Info

Amp’ed RF Technology BT24 Input 3.3VDC 50mA Made in China FCC ID: X3ZBTMOD6 IC: 8828A-MOD6

Internal Photos

Prüfbericht - Nr.: Test Report No.: 15057486 001 1. Photographs of EUT Photograph 1: Prüfbericht - Nr.: Test Report No.: 15057486 001 Photograph 2:

RF Exposure Info

IC: 8808A-MOD6 FCC ID : X3ZBTMOD6 Produkte Products RF Exposure Statement: Page 1 of 1 Client: Amp’ed RF Technology Inc. 1879 Lundy Ave, Suite 138, San Jose, CA95131, USA Test item: Bluetooth Module Identification: BT24 FCC Requirement According to FCC 2.1091, mobile equipment must comply with the following applicable limit for maximum permissible exposure (MPE) specified in FCC 1.1310: Equipment Use Frequency Range Power Density [mW/cm 2 ] Average Time [min] General Population / Uncontrolled Exposure 1.5 – 100GHz 1 6 IC Requirement According to RSS-102 (Issue 4), clause 2.5.2, no routine RF exposure evaluation is required if the transmitter power (e.i.r.p.) is below the following threshold: Frequency Range SAR Limitation [W] Above 1.5GHz 5 Measurement Result The maximum measured transmitter power is the following: Conducted Output Power P out [mW] Maximum Antenna Gain [dBi] P out EIRP [mW] Power Density at 20cm [mW/cm 2 ] 4.2 1.48 5.91 0.0011 Note: The power density S in mW/cm 2 is calculated according to the Friis formula: S = (P S = power density in mW/cm 2 P out = antenna conducted output power in mW G = antenna gain in linear scale (here: 1.48dBi=10log(G)) D = distance between observation point and radiating structure in cm (here: 20cm) out · G) / (4π · D 2 ), where Conclusion The device complies with the FCC and IC RF exposure requirements since the maximum transmitter power density is below the FCC limit and the e.i.r.p. power is below the IC RF exposure evaluation exemption threshold. Refer to test repo rt 15057486 001 for more details. TÜV Rheinland (Shanghai) Co., Ltd. 10-15/F, Huatsing Building, No.88, Lane 777, Guangzhong Road West, Shanghai 200072, P.R. China

Test Report

3ΥΡΓΞΝtΗ 3ΥΡΓΞΦtς 3ΥüΙΕΗΥΛΦΚt - 1Υ.: 7Ηςt 5ΗΣΡΥt 1Ρ.: 15057486 001 6ΗΛtΗ 2 ΨΡΘ 51 3aθΗ 2 ΡΙ 51 7(67 6800∃5< 3.2.1 92/7∃∗( 5(48,5(0(176, )&& 15.31(() 5(68/7: 3∃66 3.2.2 ∃17(11∃ 5(48,5(0(176, )&& 15.203, )&& 15.204 ∃1∋ 566-∗(1 7.1.4 5(68/7: 3∃66 5.1.1 &21∋8&7(∋ 287387 32:(5, )&& 15.247(%)(1) ∃1∋ 566-210 ∃8.4(2) 5(68/7: 3∃66 5.1.2 &∃55,(5 )5(48(1&< 6(3∃5∃7,21, )&& 15.247(∃)(1) ∃1∋ 566-210 ∃8.1(%) 5(68/7: 3∃66 5.1.3 20∋% %∃1∋:,∋7+, )&& 15.247(∃)(1) ∃1∋ 566-210 ∃8.1(∃) 5.1.4 99% %∃1∋:,∋7+, 566-∗(1 4.6.1 5.1.5 180%(5 2) +233,1∗ )5(48(1&,(6, )&& 15.247(∃)(1)(,,,) ∃1∋ 566-210 ∃8.1(∋) 5(68/7: 3∃66 5.1.6 ∃9(5∃∗( 7,0( 2) 2&&83∃1&<, )&& 15.247(∃)(1)(,,,) ∃1∋ 566-210 ∃8.1(∋) 5(68/7: 3∃66 5.1.7 &21∋8&7(∋ 6385,286 (0,66,21, )&& 15.247(∋) ∃1∋ 566-210 ∃8.5 5(68/7: 3∃66 5.1.8 %∃1∋ (∋∗( &203/,∃1&( 2) 5) &21∋8&7(∋ (0,66,21, )&& 15.247(∋) ∃1∋ 566-210 ∃8.5 5(68/7: 3∃66 6.1.1 %∃1∋ (∋∗( 5∃∋,∃7(∋ (0,66,21, )&& 15.205, )&& 15.209, )&& 15.247(∋), 566-210 2.2, 566-210 2.6 ∃1∋ 566-210 ∃8.5 5(68/7: 3aςς 6.1.2 5∃∋,∃7(∋ 6385,286 (0,66,21 2) 75∃160,77(5, )&& 15.205, )&& 15.209, )&& 15.247(∋), 566-210 2.2, 566-210 2.6 ∃1∋ 566-210 ∃8.5 5(68/7: 3∃66 6.2.1 5∃∋,∃7(∋ 6385,286 (0,66,21 2) 5(&(,9(5, )&& 15.109, 566-210 2.2, 566- 210 2.6, 566-210 ∃8.5, 566-∗(1 7.2.3.2 5(68/7: 3∃66 6.3.1 ∃& 32:(5 /,1( &21∋8&7(∋ (0,66,21, )&& 15.207 ∃1∋ 566-∗(17.2.2 5(68/7: 3∃66 3ΥΡΓΞΝtΗ 3ΥΡΓΞΦtς 3ΥüΙΕΗΥΛΦΚt - 1Υ.: 7Ηςt 5ΗΣΡΥt 1Ρ.: 15057486 001 6ΗΛtΗ 3 ΨΡΘ 51 3aθΗ 3 ΡΙ 51 &ΡΘtΗΘtς 1. ∗(1(5∃/ 5(0∃5.6 ............................................................................................... 5 1.1 &203/(0(17∃5< 0∃7(5,∃/6 ................................................................................. 5 2. 7(67 6,7(6 ............................................................................................................ 5 2.1 7(67 )∃&,/,7,(6 ..................................................................................................... 5 2.2 /,67 2) 7(67 ∃1∋ 0(∃685(0(17 ,167580(176 ...................................................... 6 2.3 0(∃685(0(17 81&(57∃,17< ................................................................................. 6 3. ∗(1(5∃/ 352∋8&7 ,1)250∃7,21 ........................................................................... 7 3.1 352∋8&7 )81&7,21 ∃1∋ ,17(1∋(∋ 86( .................................................................. 7 3.2 6<67(0 ∋(7∃,/6 .................................................................................................... 7 3.2.1 9ΡΟtaθΗ 5ΗΤΞΛΥΗΠΗΘtς, )&& 15.31(Η).......................................................................................... 7 3.2.2 ∃ΘtΗΘΘa 5ΗΤΞΛΥΗΠΗΘtς, )&& 15.203, )&& 15.204 aΘΓ 566-∗ΗΘ 7.1.4 ..................................... 8 3.3 ,1∋(3(1∋(17 23(5∃7,21 02∋(6 ........................................................................... 8 3.4 &/2&. )5(48(1&,(6 ............................................................................................. 8 3.5 12,6( 68335(66,1∗ 3∃576 .................................................................................... 8 4. 7(67 6(7-83 ∃1∋ 23(5∃7,21 02∋(6 ..................................................................... 9 4.1 7(67 0(7+2∋2/2∗< .............................................................................................. 9 4.2 3+<6,&∃/ &21),∗85∃7,21 )25 7(67,1∗ ................................................................. 9 4.3 7(67 23(5∃7,21 ∃1∋ 7(67 62)7:∃5( ................................................................... 9 4.4 63(&,∃/ ∃&&(6625,(6 ∃1∋ ∃8;,/,∃5< (48,30(17 ................................................. 9 4.5 &2817(50(∃685(6 72 ∃&+,(9( (0& &203/,∃1&( .............................................. 10 5 . 7(67 5(68/76 2) &21∋8&7(∋ 0(∃685(0(176 ∃7 ∃17(11∃ 3257 ....................... 11 5.1 75∃160,77(5 3∃5∃0(7(56 .................................................................................. 11 5.1.1 &ΡΘΓΞΦtΗΓ 2ΞtΣΞt 3ΡΖΗΥ, )&& 15.247(Ε)(1) aΘΓ 566-210 ∃8.4(2) ......................................... 11 5.1.2 &aΥΥΛΗΥ )ΥΗΤΞΗΘΦ∴ 6ΗΣaΥatΛΡΘ, )&& 15.247(a)(1) aΘΓ 566-210 ∃8.1(Ε) .................................. 13 5.1.3 20Γ% %aΘΓΖΛΓtΚ, )&& 15.247(a)(1) aΘΓ 566-210 ∃8.1(a) ....................................................... 16 5.1.4 99% %aΘΓΖΛΓtΚ, 566-∗ΗΘ 4.6.1 ................................................................................................ 20 5.1.5 1ΞΠΕΗΥ ΡΙ +ΡΣΣΛΘθ )ΥΗΤΞΗΘΦΛΗς, )&& 15.247(a)(1)(ΛΛΛ) aΘΓ 566-210 ∃8.1(Γ) ........................ 24 5.1.6 ∃ΨΗΥaθΗ 7ΛΠΗ ΡΙ 2ΦΦΞΣaΘΦ∴, )&& 15.247(a)(1)(ΛΛΛ) aΘΓ 566-210 ∃8.1(Γ) ............................... 27 5.1.7 &ΡΘΓΞΦtΗΓ 6ΣΞΥΛΡΞς (ΠΛςςΛΡΘ, )&& 15.247(Γ) aΘΓ 566-210 ∃8.5 .......................................... 30 5.1.8 %aΘΓ (ΓθΗ &ΡΠΣΟΛaΘΦΗ ΡΙ 5) &ΡΘΓΞΦtΗΓ (ΠΛςςΛΡΘ, )&& 15.247(Γ) aΘΓ 566-210 ∃8.5 ........ 36 6. 7(67 5(68/76 2) 5∃∋,∃7(∋ 0(∃685(0(176 ....................................................... 39 6.1 75∃160,77(5 3∃5∃0(7(56 .................................................................................. 39 6.1.1 %aΘΓ (ΓθΗ 5aΓΛatΗΓ (ΠΛςςΛΡΘ, )&& 15.205, )&& 15.209, )&& 15.247(Γ), 566-210 2.2, 566-210 2.6 aΘΓ 566-210 ∃8.5 ............................................................................................... 39 6.1.2 5aΓΛatΗΓ 6ΣΞΥΛΡΞς (ΠΛςςΛΡΘ ΡΙ 7ΥaΘςΠΛttΗΥ, )&& 15.205, )&& 15.209, )&& 15.247(Γ), 566-210 2.2, 566-210 2.6 aΘΓ 566-210 ∃8.5 ......................................................................... 45 3ΥΡΓΞΝtΗ 3ΥΡΓΞΦtς 3ΥüΙΕΗΥΛΦΚt - 1Υ.: 7Ηςt 5ΗΣΡΥt 1Ρ.: 15057486 001 6ΗΛtΗ 4 ΨΡΘ 51 3aθΗ 4 ΡΙ 51 6.2 5(&(,9(5 3∃5∃0(7(56 ....................................................................................... 47 6.2.1 5aΓΛatΗΓ 6ΣΞΥΛΡΞς (ΠΛςςΛΡΘ ΡΙ 5ΗΦΗΛΨΗΥ, )&& 15.109, 566-210 2.2, 566-210 2.6, 566- 210 ∃8.5, 566-∗ΗΘ 7.2.3.2 ....................................................................................................... 47 6.3 7(67 5(68/76 2) ∃& 32:(5 /,1( &21∋8&7(∋ 0(∃685(0(176 .......................... 48 6.3.1 ∃& 3ΡΖΗΥ /ΛΘΗ &ΡΘΓΞΦtΗΓ (ΠΛςςΛΡΘ, )&& 15.207 …

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Test Setup Photos

Prüfbericht - Nr.: Test Report No.: 15057486 001 1. Photographs of the Test Setup Photograph 1: Set-up for Conducted Emission at Antenna Port Prüfbericht - Nr.: Test Report No.: 15057486 001 Photograph 2: Set-up for Radiated Emission, 30MHz-1000MHz Photograph 3: Set-up for Radiated Emission, 1G-18GHz Prüfbericht - Nr.: Test Report No.: 15057486 001 Photograph 4: Set-up for Conduct Power

Contact Information

Applicant

Annie Cai(Operations Manager)
[email protected]408-213-9530Fax: 408-213-9533

Test Firm

TUV Rheinland (Shanghai) Co., Ltd.Xinhua LU
[email protected](86-21)33034599Fax: (86-21)63542366

Technical Specifications

#Rule PartsFrequency RangePower Output
115C2.40 GHz - 2.48 GHz4.20 mW
Modular Type
Limited Single Modular Approval
Confidentiality
Long Term
Grant Notes
Output power listed is peak conducted. This grant is valid only when the device is sold to OEM integrators and installation is done under the control of the Grantee. This transmitter must not be co-located or operating in conjunction with any other antenna or transmitters within a host device, except in accordance with FCC multitransmitter product procedures. The antenna of this transmitter must be installed to provide a separation distance of at least 5mm from all persons.

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